• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.169-172
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• 2000

A-Si:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly-Si films were achieved by various anneal techniques ; isothermal, RTA, and excimer laser anneal. The TFT on as-grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from $200^{\circ}C$ to $1000^{\circ}C$. The TFT on poly-Si showed an improved $I_{on}/I_{off}$ ratio of $10^6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly-Si TFTs.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.237-240
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• 1991

In this paper, silicon oxynitride(SiON) films were chemically deposited by 193 nm Excimer laser irradiated parallel to the substrate. the laser pulse energy was 80 mJ, repetetion rate was 80 Hz and the laser average power was 6.4 watt, the gas ratio of $N_2O/NH_3$ was 0.75, the substrate temperature was $300^{\circ}C$, and the chamber pressure was 2 torr. And then, the interface state density($N_{ss}$) was characterized by DLTS(Deep Level Transient Spectroscopy). In addition, the capture cross section($\sigma$) and activation energy(${\Delta}E$) was also obtained. The resulting Nss values were $5.5{\times}10^{10}-3.2{\times}10^{11}(eV^{-1}cm^{-2})$, $\sigma$ was $6.64{\times}10^{-20}-2.114{\times}10^{-17}(cm^2)$, the ${\Delta}E$ of two peaks were $8.93{\times}10^{-2}$(eV), 0.375(eV).

• Journal of ILASS-Korea
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• v.4 no.2
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• pp.19-32
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• 1999

The present study investigated the forms and behaviors of fuel during intake and compression process, and the initial flame stability in a lean burn engine modified as a single cylinder engine equipped with quartz windows for visualization. PLIF(Planar Laser Induced Fluorescence) method with KrF Excimer laser was used for measuring the fuel distributions. The principal design concept of the lean burn nin in this study is the axial stratification in the fuel distribution via fuel injection during intake process and different shapes of intake ports; helical and straight. The experiments showed that fuel flowed in as a vapor state in the early part of intake process and lots of this mixture mated down along the intake valve side cylinder wall, but in the latter part, a lot of fuel flowed in as a liquid state and this fuel stayed in the upper part of cylinder, after that the dense fuel cloud moved upward in the early of part compression process. It became clear that the fuel flowed in via straight port had a important role in the axial fuel stratification.

• Transactions of the Korean hydrogen and new energy society
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• v.13 no.4
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• pp.279-286
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• 2002

In this study, quantitative nitric oxide concentration distributions are investigated in the laminar non-premixed $H_2/N_2$ flames by laser-induced fluorescence (LIF). The measurements are taken in flames for different $N_2$ dilution ratios varying from 20~80%, and fuel flow rate is fixed as Islpm. The NO A-X (0,0) vibrational band around 226 nm is excited using a XeCl excimer-pumped dye laser. We applied same excitation line used in $CH_4$, premixed flame. Overall, NO concentration was rapidly decreased with Na addition and we could not measure the concentration any longer for $N_2$ dilution above 80%.

• Laser Solutions
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• v.17 no.3
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• pp.19-23
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• 2014

To directly engrave circuit-line patterns as wide as $6{\mu}m$ in a buildup film to be used as an IC substrate, we applied a projection ablation technique in which an 8 inch dielectric ($ZrO_2/SiO_2$) mask, a DPSS 355nm laser instead of an excimer laser, a ${\pi}$-shaper and a galvo scanner are used. With the ${\pi}$-shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam. The galvo scanner before the $f-{\theta}$ lens moves the flat-top beam ($115{\mu}m{\times}105{\mu}m$) across the 8 inch dielectric mask whose patterned area is $120mm{\times}120mm$. Based on the results of the previous research by the authors, the projection ratio was set at 3:1. Experiments showed that the average width and depth of the engraved patterns are $5.41{\mu}m$ and $7.30{\mu}m$, respectively.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.293-300
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• 2005

ZnO:Li epilayers were synthesized on sapphire substrates by the pulesd laser deposition (PLD) after the surface of the ZnO:Li sintered pellet was irradiated by the ArF (193 nm) excimer laser. The growth temperature was fixed at $400^{\circ}C$. The crystalline structure of epilayers was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of epilayers measured by van der Pauw-Hall method are $2.69\times10cm^{-3}$ and $52.137cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of epilayers obtained from the absorption spectra is well described by the Varshni's relation, $E_g(T)=3.5128eV{\cdot}(9.51\times10^{-4}eV/K)T^2/(T+280K)$. After the as-grown ZnO:Li epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO:Li has been investigated by PL at 10 K. The Peaks of native defects of $V_{zn},\;V_o,\;Zn_{int},\;and\;O_{int}$ showned on PL spectrum are classified as a donors or accepters type. We confirm that $ZnO:Li/Al_2O_3$ in vacuum do not form the native defects because ZnO:Li epilayers in vacuum existe in the form of stable bonds.

• Journal of Energy Engineering
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• v.10 no.4
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• pp.379-386
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• 2001

This experimental study deals with on Nitric Oxide Formation & Reduction in Industrial Bunner. In this study, Laser-induced fluorescence (LIF) techniques have been used for quantitative measurements of Nitric Oxide. The NO A-X (0, 0) Vibrational band around 226 nm was excited using a XeCl excimer-pumped dye laser. And on-line excitation used $P_{21}+Q_1(14.5)/R_{12}+Q_2(20.5)/P_1(23.5)$ transition, for minimizing the other interferential effect. The measurements were taken NO concentration distribution in double swirling diffusion flame. In this swirl burner, NO concentration in downstream fo the flame decrease as primary/secondary air ratio increases.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.155-157
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• 1991

This paper describe a Laser CVD technology which realizes planarized interlevel dielectrics in sub-micron VLSI's. This technology comprises sub-micron gap filling with $SiO_2$ films between metal lines. Laser CVD process conditions have been investigated to improve step coverage of interlevel dielectrics. An ArF(193nm) Excimer Laser was used to excite and dissociate gas phase $SiH_4\;and\;N_2O$ molecules. The Laser CVD by $N_2O\;and \;SiH_4$. mixture gases has realized conformal deposition above the temperature of $300^{\circ}C$, as a result sub-micron gaps were buried with $SiO_2$ films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.525-531
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• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Journal of Powder Materials
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• v.15 no.1
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• pp.46-52
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• 2008

The restrictor, which is a fluid channel from a reservoir to a chamber inside a thermal micro actuator, has been fabricated using ArF and KrF excimer lasers, Diode-Pumped Solid State Lasers (DPSSL) and femtosecond lasers for a feasibility study. A numerical model of fluid dynamics for the actuator chamber and restrictor is presented. The model includes bubble formation and growth, droplet ejection through nozzle, and dynamics of fluid refill through the restrictor from a reservoir. Since an optimized and well-fabricated restrictor is important for a high frequency actuator, some special beam delivery setups and post processing techniques have been researched and developed. The effects of variations of the restrictor length, diameter, and tapered shapes are simulated and the results are analyzed to determine the optimal design. The numerical results of droplet velocity and volume are compared with the experimental results of a cylindrical-shaped actuator. It is found that the micro actuators having tapered restrictors show better high frequency characteristics than those having a cylindrical shape without any notable decrease of droplet volume. The laser-fabricated restrictors demonstrate initial feasibility for the laser direct ablation technique although more development is required.