• 한국표면공학회지
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• 제54권6호
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• 한국산학기술학회논문지
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• 제19권4호
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• pp.650-656
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• 2018

TFT-LCD 산업은 반도체와 유사한 공정기술을 갖는 대규모 장치 산업으로 일종의 Giant Microelectronics 산업이다. 습식 에칭(Wet Etching)은 전체 TFT 공정에서 비교적 큰 비중을 차지하고 있지만 발표된 연구사례는 부족한 실정이다. 그 주요 원인은 반응이 일어나는 에칭액(Etchant) 성분이 기업의 비밀로 간주되어 외부에 발표되는 사례가 거의 없기 때문이다. 최근 대면적 LCD 제조를 위하여 사용되는 알루미늄(Al)과 구리(Cu)는 습식 에칭을 진행하기에 매우 까다로운 물질이다. 저 저항성 재료인 Cu는 습식 에칭 공정에서만 가능하며 높은 속도와 낮은 실패율, 적은 소비전력으로 Al 에칭 대용으로 사용하고 있다. 그리고 에칭액으로 사용하는 과산화수소($H_2O_2$)의 이상 반응으로 추가적인 배관 및 전기적인 안전장치가 필요하다. 본 논문에서는 과산화수소의 이상 반응을 제한하지는 못하나 이상 반응 발생 시 설비의 피해를 최소화 할 수 있는 방법을 제안한다. 또한 최근에 알루미늄 에칭설비에서 구리 에칭설비로 변경하는 사례가 많아 구리 에칭설비에 대한 하드웨어 인터록을 제안하고 안전 등급이 높은 안전 PLC로 구현하여 이상 반응에 대한 대비책을 강구하는 방안을 제안한다.

• Transactions on Electrical and Electronic Materials
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• 제17권5호
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• pp.302-305
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• 2016

In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.

• 한국레이저가공학회지
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• 제3권2호
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• pp.35-43
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• 2000

Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• International Journal of Precision Engineering and Manufacturing
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• 제3권1호
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• pp.26-32
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• 2002

Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

• 열처리공학회지
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• 제13권2호
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• pp.91-97
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• 2000

The structure and mechanical properties of TiN and TiCN thin films deposited on STD61 steel substrates by the RF-sputtering methods has been studied by using XPS, XRD, micro-hardness tester, scratch tester, and wear-resistance tester. XPS results showed that the TiCN thin film formed with chemical bonding state. The TiN thin films grew with (111) orientation having the lowest strain energy by compressive stress, whereas the TiCN thin films grew with both (111) and (200) orientation, but (200) orientation having the lowest surface energy becomes dominant as carbon contents increase. The pre-etching treatment of substrate did not affect on the preferred orientation of thin films, but it played an important role in improving mechanical properties of thin films such as the hardness, adhesion and wear- resistance. Especially, the TiCN thin films showed the superior wear resistances due to high hardness and low friction coefficient compared with TiN thin films.

• 한국세라믹학회지
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• 제53권6호
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• pp.700-706
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• 2016

Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that $CaF_2$ and $YF_3$ with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semi-conductor and display processes.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 추계학술대회 초록집
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• pp.53.2-53.2
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• 2010

In this study, we focused on our specialized electrode process for Si back-contact crystalline solar cell. It is different from other well-known back-contact cell process for thermal aspect and specialized process. In general, aluminum makes ohmic contact to the Si wafer and acts as a back surface reflector. And, silver is used for low series resistance metal grid lines. Aluminum was sputtered onto back side of wafer. Next, silver is directly patterned on the wafer by screen printing. The sputtered aluminum was removed by wet etching process after rear silver electrode was formed. In this process, the silver paste must have good printability, electrical property and adhesion strength, before and after the aluminum etching process. Silver paste also needs low temperature firing characteristics to reduce the thermal budget. So it was seriously collected by the products of several company of regarding low temperature firing (below $250^{\circ}C$) and aluminum etching endurance. First of all, silver pastes for etching selectivity were selected to evaluate as low temperature firing condition, electrical properties and adhesive strength. Using the nano- and micron-sized silver paste, so called hybrid type, made low temperature firing. So we could minimize the thermal budget in metallization process. Also the adhesion property greatly depended on the composition of paste, especially added resin and inorganic additives. In this paper, we will show that the metallization process of back-contact solar cell was realized as optimized nano-paste characteristics.

• 한국결정성장학회지
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• 제33권4호
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• pp.153-157
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• 2023

반도체 회로를 제조하기 위해서 에칭, 세척, 증착 등의 공정들이 반복적으로 진행된다. 따라서 이러한 공정이 진행되면 진공장비 내부는 부식성이 높은 가혹한 플라즈마 환경에 노출되게 된다. 따라서 반도체 공정 장비의 내부를 플라즈마 노출에 강한 재료를 사용하여 코팅층의 에칭과 오염 입자의 생성을 최소화하여야 한다. 본 연구에서는 고상합성법에 의해 합성된 옥시불화이트륨 (YOF)를 이용한 증착층의 플라즈마 식각 특성을 향상시키기 위하여 YOF 분말에 AlF₃ 분말을 혼합하여 플라즈마 스프레이 공정으로 Al 금속위에 증착시키고 그 특성을 분석하였다. AlF₃ 혼합비율의 증가에 따른 증착층의 결정구조, 미세구조 및 화학조성 변화를 조사하고 증착된 코팅층의 플라즈마 식각율을 측정하여 AlF₃ 혼합비율과의 상관관계를 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.294.2-294.2
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• 2016

Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).