Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2016.02a
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- Pages.294.2-294.2
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- 2016
Role of edge patterning and metal contact for extremely low contact resistance on graphene
- Jo, Seo-Hyeon (School of Electronics and Electrical Engineering, Sungkyunkwan University) ;
- Park, Hyung-Youl (School of Electronics and Electrical Engineering, Sungkyunkwan University) ;
- Park, Jin-Hong (School of Electronics and Electrical Engineering, Sungkyunkwan University)
- Published : 2016.02.17
Abstract
Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately