• 대한금속재료학회지
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• 제49권10호
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• pp.797-804
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• 2011

In this study, the mechanisms of the three steps (the polymer deposition step, the polymer etching step and the Si etching step) that constitute the Bosch process were investigated. The effects of radicals and ions on each step were quantitatively analyzed by comparing the simulated aspect ratio dependency of the deposition or etch rate with the experimental results. In the polymer deposition step, fluorocarbon polymer is deposited by chemical reactions of $CF_x$ radicals, of which the reaction probability is 0.13. Although the polymer etching step and the Si etching step were conducted under the same conditions, the etching mechanisms of polymer and Si were found to be quite different. In the polymer etching step, both chemical etching and physical sputter-etching contribute to the polymer etching. Whereas, in the Si etching step, Si is chemically etched by F radicals, of which the reactivity is greatly increased by the bombardment of energetic ions.

• 한국결정성장학회지
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• 제8권2호
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• pp.249-254
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• 1998

GaN계 재료의 습식 화학식각 특성과 광 화학 및 전기 화학 및 전기 화학 습식식각 특성을 연구하였다. n형 GaN는 상온에서 NaOH 수용액에 식각되었으며 식각두께는 식각시간에 선형적으로 증가하였다. 또 광 조사 및 전기 화학을 가할 경우 식각율은 수배로 증가하였으며, 식각율은 $1{\times}10^{19};cm^{-3}$의 전자농도를 갖는 시료에서 광 조사시 최대 164${\AA}$/min을 얻었다. n-GaN의 식각율은 GaN의 전자농도에 크게 의존하는 특성을 나타내었으며 이러한 식각과정을 논의하였다. $SiO_2$ 박막으로 덮여진 100${\mu}m{\times}100{\mu}m$ 모양의 옆 식각면은 방향성을 갖지 않고 수직하였으며, 넓은 면적에서 매우 평탄하였다.

• 공업화학
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• 제20권2호
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• pp.172-176
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• 2009

Solder resist ink와 회로표면과의 밀착력 향상을 위해 사용되는 soft etching 제의 기본 조성으로 과산화수소와 황산을 선정하고 inhibitor, 계면활성제, 안정제를 첨가하여 에칭 속도 $0.7{\sim}1{\mu}m/min$, 표면조도(Ra)값 $0.5{\sim}0.6{\mu}m$을 만족시키는 soft etching 제 개발을 위한 연구를 하였다. Inhibitor로는 butyl amine, cyclohexyl amine, 5-aminotetrazole (5-Azol)을 첨가하였으며 계면활성제로는 polyethylene glycol (PEG), polyethylene imine (PEI), piperidine을 안정제로는 butyl alcohol, isopropanol, 인산을 첨가하여 각각의 첨가제가 에칭 속도 및 표면조도에 미치는 영향을 비교 분석하였다. 본 연구 결과 과산화수소 3% 황산 4%에 5-Azol 500 ppm, PEI 600 ppm, 인산 10 ppm 첨가 시 $0.7~1{\mu}m/min$을 만족시키는 에칭속도와 가장 좋은 표면조도를 갖는 것을 확인하였으며 solder test 결과 solder resist ink의 들뜸 현상이 발생하지 않는 것을 확인하였다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.1058-1062
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• 1997

Development of laser induced chemical etching technologt with KrF laser are carried out in this study for micromachining of silicon wafer. The paper is devoted to experimental identification of excimer laser induced mechanism of silicon under chlorine pressures(0.02~500torr). Experimental results on pulsed KrF excimer laser etching of silicon in chorine atmosphere are presented. Etching rate dependency on laser fluence and chlorine pressure are discussed on the basis of experimental analysis, it is concluded that accurate digital micro machining process of silicon wafer can achieved by KrF laser induced chemical etching technology.

• 전자공학회논문지A
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• 제30A권1호
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• pp.16-22
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• 1993

A via-hole process for reproducible and reliable GaAs MMIC fabrication is described. The via-hole etching process consists of two step dry etching. During the first etching step a BC $I_{3}$/C $I_{2}$/Ar gas mixure is used to achieve high etch rate and small lateral etching. In the second etching step. CC $L_{2}$ $F_{2}$ gas is used to achieve selective etching of the GaAs substrate with respect to the front side metal layer. Via holes are formed from the backside of a 100$\mu$m thick GaAs substrate that has been evaporated initially with 500.angs. thick chromium and subsequently a 2000.angs. thick gold layer. The fabricated via holes are electroplated with gold (~20$\mu$m thick) to form via connections. The results show that established via-hole process is satisfactory for GaAs MMIC fabrication.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.416-417
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• 2005

In this study, we optimized the process of Si anisotropy etching by combing tetramethyl ammonium hydroxide (TMAH) etching process with ultrasonic wave technology. New ultrasonic TMAH etching apparatus was developed and it was used for fabricating a $20{\mu}m$ thick diaphragm for Si piezoresistive pressure sensors. Based on comparison study on etch rate and surface flatness, it was observed that the Si anisotropy etching methode with new ultrasonic TMAH etching apparatus (at 40 kHz/ 500 watt) was superior to conventional etching methods with TMAH or TMAH+ammonium persulfate(AP) solutions.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2004년도 춘계학술대회 논문집
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• pp.245-249
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• 2004

Transparent materials such as fused silica are important materials in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. However, these properties make it difficult to micromachine silica in micro-sized quantities. In this study, we fabricated a micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone, toluene, and pyrene-toluene solution were used as etchant. In the side of etch rate, toluene and pyrene-toluene solution were better than pyrene-acetone solution.

• Journal of Information Display
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• 제1권1호
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• pp.52-58
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• 2000

We observed that static electricity has an influence on the etching unformity of dry etching process. When the static electricity was applied from-200[V]to-1000[V] on glass substrates, the etching rate uniformity was changed to 1.5%-15%. In this experiment, the soft X-ray to neutralize static electricity was adopted as ore of neutralization methods. As an experimental result, soft X-ray irradiation improved neutralization capability on the surface of LCD glass substrate within the short time, about 15-30sec. The difference of etching rate uniformity was below 0.5%.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1974-1976
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• 1996

An electrostatically driven comb actuator with $525{\mu}m$ height was fabricated using (110) Si anisotropic etching in the Potassium Hydroxide(KOH) solution. The etch-rate and etch-rate ratio are strongly dependent on the weight % and temperature of KOH solution. We developed the optimal condition for the anisotropic etching on (110) wafer with varying these conditions. The force that the comb-drive actuator generates is inversely proportional to the distance of gap and proportional to the height of the comb electrodes. The electrodes must have the high aspect ratio. The (110) Si anisotropic etching is very useful to get a high aspect ratio structure.

• 한국재료학회지
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• 제16권4호
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• pp.213-217
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• 2006

In this study, atomic layer etching of Si has been carried out using $Cl_2$ adsorption followed by the irradiation Ar neutral beam of low energy. In this experiment, the etch rate of Si was dependent on the $Cl_2$ pressure(the surface coverage of chlorine) and the irradiation time of Ar neutral beam(the flux density of Ar neural beam). And the etch rate of Si(100) and Si(111) were saturated exactly at one monolayer per cycle with $1.36{\AA}/cycle\;and\;1.57{\AA}/cycle$, respectively.