Korean Journal of Metals and Materials (대한금속재료학회지)

The Korean Institute of Metals and Materials (대한금속재료학회)
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Simulation Study on the Etching Mechanism of the Bosch Process

보쉬 공정의 식각 메커니즘에 대한 전산모사 연구

  • Kim, Chang-Gyu (Department of Materials Science and Engineering, KAIST) ;
  • Moon, Jae-Seung (Department of Materials Science and Engineering, KAIST) ;
  • Lee, Won-Jong (Department of Materials Science and Engineering, KAIST)
  • 김창규 (한국과학기술원 신소재공학과) ;
  • 문재승 (한국과학기술원 신소재공학과) ;
  • 이원종 (한국과학기술원 신소재공학과)
  • Received : 2011.02.14
  • Published : 2011.10.25
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Abstract

In this study, the mechanisms of the three steps (the polymer deposition step, the polymer etching step and the Si etching step) that constitute the Bosch process were investigated. The effects of radicals and ions on each step were quantitatively analyzed by comparing the simulated aspect ratio dependency of the deposition or etch rate with the experimental results. In the polymer deposition step, fluorocarbon polymer is deposited by chemical reactions of $CF_x$ radicals, of which the reaction probability is 0.13. Although the polymer etching step and the Si etching step were conducted under the same conditions, the etching mechanisms of polymer and Si were found to be quite different. In the polymer etching step, both chemical etching and physical sputter-etching contribute to the polymer etching. Whereas, in the Si etching step, Si is chemically etched by F radicals, of which the reactivity is greatly increased by the bombardment of energetic ions.

Keywords

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