• Journal of the Microelectronics and Packaging Society
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• v.24 no.3
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• pp.7-11
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• 2017

In this paper, we have studied the characteristics of NAND Flash memory in SONOS Poly-Si Thin Film Transistor (Poly-Si TFT) device. Source/drain junctions(S/D) of cells were not implanted and selective transistors were located in the end of cells. We found the optimum conditions of process by means of the estimation for the doping concentration of channel and source/drain of selective transistor. As the doping concentration was increased, the channel current was increased and the characteristic of erase was improved. It was believed that the improvement of erase characteristic was probably due to the higher channel potential induced by GIDL current at the abrupt junction. In the condition of process optimum, program windows of threshold voltages were about 2.5V after writing and erasing. In addition, it was obtained that the swing value of poly Si TFT and the reliability by bake were enhanced by increasing process temperature of tunnel oxide.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.310-310
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• 2016

최근 NAND flash memory는 높은 집적성과 데이터의 비휘발성, 낮은 소비전력, 간단한 입, 출력 등의 장점들로 인해 핸드폰, MP3, USB 등의 휴대용 저장 장치 및 노트북 시장에서 많이 이용되어 왔다. 특히, 최근에는 smart watch, wearable device등과 같은 차세대 디스플레이 소자에 대한 관심이 증가함에 따라 유연하고 투명한 메모리 소자에 대한 연구가 다양하게 진행되고 있다. 대표적인 플래시 메모리 소자의 구조로 charge trapping type flash memory (CTF)가 있다. CTF 메모리 소자는 trap layer의 trap site를 이용하여 메모리 동작을 하는 소자이다. 하지만 작은 window의 크기, trap site의 열화로 인해 메모리 특성이 나빠지는 문제점 등이 있다. 따라서 최근, trap layer에 다양한 물질을 적용하여 CTF 소자의 문제점을 해결하고자 하는 연구들이 진행되고 있다. 특히, 산화물 반도체인 zinc oxide (ZnO)를 trap layer로 하는 CTF 메모리 소자가 최근 몇몇 보고 되었다. 산화물 반도체인 ZnO는 n-type 반도체이며, shallow와 deep trap site를 동시에 가지고 있는 독특한 물질이다. 이 특성으로 인해 메모리 소자의 programming 시에는 deep trap site에 charging이 일어나고, erasing 시에는 shallow trap site에 캐리어들이 쉽게 공급되면서 deep trap site에 갇혀있던 charge가 쉽게 de-trapped 된다는 장점을 가지고 있다. 따라서, 본 실험에서는 산화물 반도체인 ZnO를 trap layer로 하는 CTF 소자의 메모리 특성을 확인하기 위해 간단한 구조인 metal-oxide capacitor (MOSCAP)구조로 제작하여 메모리 특성을 평가하였다. 먼저, RCA cleaning 처리된 n-Si bulk 기판 위에 tunnel layer인 SiO2 5 nm를 rf sputter로 증착한 후 furnace 장비를 이용하여 forming gas annealing을 $450^{\circ}C$에서 실시하였다. 그 후 ZnO를 20 nm, SiO2를 30 nm rf sputter로 증착한 후, 상부전극을 E-beam evaporator 장비를 사용하여 Al 150 nm를 증착하였다. 제작된 소자의 신뢰성 및 내구성 평가를 위해 상온에서 retention과 endurance 측정을 진행하였다. 상온에서의 endurance 측정결과 1000 cycles에서 약 19.08%의 charge loss를 보였으며, Retention 측정결과, 10년 후 약 33.57%의 charge loss를 보여 좋은 메모리 특성을 가지는 것을 확인하였다. 본 실험 결과를 바탕으로, 차세대 메모리 시장에서 trap layer 물질로 산화물 반도체를 사용하는 CTF의 연구 및 계발, 활용가치가 높을 것으로 기대된다.

• The KIPS Transactions:PartB
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• v.16B no.4
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• pp.289-298
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• 2009

Active Contour Model, that is, Snake algorithm is effective for detection and tracking the objects. However, this algorithm has some drawbacks; numerous parameters must be designed(weighting factors, iteration steps, etc.), a reasonable initialization must be available and moreover suffers from numerical instability. Therefore we propose a novel Energy Corrected Snake(ECS) algorithm which improved on external energy of Snake algorithm for detection and tracking the moving object more effectively. The proposed algorithm uses the difference image, getting when the object is moving. It copies four direction images from the difference image and performs the accumulating compute to erasing image noise, so that it gets external energy steadily. Then external energy united with contour that is computed by internal energy. Consequently we can detect and track the moving object more speedily and easily. To show the effectiveness of the proposed algorithm, we experiment on 3 situations. The experimental results showed that the proposed algorithm outperformed by 6$\sim$9% of detection rate and 6$\sim$11% of tracker detection rate compared with the Snake algorithm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.67-68
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• 2006

Floating gate non-volatile memory devices with Au nano-particles embedded in SiON or $SiO_2$ dielectrics were fabricated by digital sputtering method. The size and the density of Au are 4nm and $2{\times}10^{-12}cm^{-2}$, respectively. The floating gate memory of MOSFET with 5nm tunnel oxide and 45nm control oxide have been fabricated. This devices revealed a memory effect which due to proGrainming and erasing works perform by a gate bias stress repeatedly.

• Journal of the Korea Convergence Society
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• v.11 no.7
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• pp.73-78
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• 2020

Modern architecture and design show experiments that practice exchange and convergence with other genres through expansive thinking. This study aims to propose the use of graphic skins as a means of dematerializing and invisiblizing expressions of architecture. The method of realizing 'invisible architecture' can be largely divided into methods that use materials that manipulate light and graphic approaches based on trickery techniques. The exterior wall graphic of the special stage in Seoul Plaza can be said to be an attempt of dematerialization to make the building structure light and transparent, and a case to propose the role of super graphics to maintain the identity of the original place by erasing disharmonious elements from the field of view. It is expected that the graphic skin will be used as a powerful means of expression in the era of 'invisible architecture' as an effective camouflage method and media beyond the means of decorating the exterior walls of the completed facilities.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.21-26
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• 2008

We fabricated nano-particles of ZnO, $In_2O_3$ and $SnO_2$ by using the chemical reaction between metal thin films and polyamic acid. The average size and density of these ZnO, $In_2O_3$ and $SnO_2$ nano-particles was approximately 10, 7, and 15 nm, and $2{\times}10^{11},\;6{\times}10^{11},\;2.4{\times}10^{11}cm^{-2}$, respectively. Then, we fabricated nano-floating gate memory (NFGM) devices with ZnO and $In_2O_3$ nano-particles embedded in the devices' polyimide dielectrics and silicon dioxide layers as control and tunnel oxides, respectively. We measured the current-voltage characteristics, endurance properties and retention times of the memory devices using a semiconductor parameter analyzer. In the $In_2O_3$ NFGM, the threshold voltage shift (${\Delta}V_T$) was approximately 5 V at the initial state of programming and erasing operations. However, the memory window rapidly decreased after 1000 s from 5 to 1.5 V. The ${\Delta}V_T$ of the NFGM containing ZnO was approximately 2 V at the initial state, but the memory window decreased after 1000 s from 2 to 0.4 V. These results mean that metal-oxide nano-particles have feasibility to apply NFGM devices.

• Korean Institute of Interior Design Journal
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• v.24 no.2
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• pp.88-99
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• 2015

As architecture is designed for humans to live in based on practicality, what one experiences within such spaces is important. Such experiences are not felt only by appreciating the structure's appearance, but involve physical presence inside the space and the deepening of the individuals relationship with the space through the body's sensory perception. However, in modern times there is a much greater tendency to rely on superficial experiences by way of images or tastes rather than more meaningful human participation, while the standardization of the object universe is gradually erasing the uniqueness of experience. In light of this, the restoration of emotional and sensory spatial experiences through the design of sensory spaces can be regarded as an important task in modern spatial design. This study contemplated the meaning of emotional spatial experiences through a phenomenological understanding of such experiences, and analyzed the meaning and main factors in the creation of spatial atmosphere as a phenomenon of spatial experience. In addition, we highlighted the fact that spatial atmosphere can be applied as space design methodology by devising methods of expression through an analysis of actual examples. O.F. Bollnow's space theory and the spatial design of Peter Zumthor were the subjects of this analysis. The spatial atmosphere analyzed using Bullnow's theory is a phenomenon in which both the human and space are connected and the ensuing spatial experience embodies the emotions of both. This spatial atmosphere can be understood as a condition in which the human and space are fused together. Furthermore, coincidental/accidental meeting, mediums using potential objects, reorganization of the center due to autonomous boundaries, as well as the three temporalities were identified as the main factors in the creation of spatial atmosphere. Based on this analysis, through the identification of methods of expression for spatial atmosphere in Zumthor's spaces.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.2
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• pp.17-22
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• 2003

The priming discharge characteristic at the reset period in the ADS drive method of PDP was experimentally analyzed in this research. The amount of wall charge accumulated by the discharge and the accumulated time are unrelated to the priming pulse width. The self-erase discharge by excessive wall charge is related to the amount of wall charge by the priming discharge and this is related to space charge generated by the priming discharge. From the experimental result, in the optimized priming condition the plus width is 8$mutextrm{s}$ and the voltage is about 163V. The space charge which helps the self-erase discharge exists during about 16$mutextrm{s}$ immediately after generating the priming discharge. Therefore, it is suitable within 16$mutextrm{s}$ of the priming pluse width for the effective reset process.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.574-577
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• 2007

While disk can be overwritten on updating data, because flash memory can not be overwritten on updating data, new data are updated in new area. If data are frequently updated, garbage collection, which is achieved by erasing blocks, should be performed to reclaim new area. Hence, because the number of erase operations is limited due to characteristics of flash memory, every block should be evenly written and erased. However, if data with access locality are processed by cost benefit algorithm with separation of hot block and cold block, though the performance of processing is high, wear-leveling is not even. In this paper, we propose CB-MB (Cost Benefit between Multi Bank) algorithm in which hot data are allocated in one bank and cold data in another bank, and in which role of hot bank and cold bank is exchanged every period. CB-MB showed that its performance was similar to that of others for uniform workload, however, the method provides much better performance than that of others for workload of access locality.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.852-855
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• 2012

A DC-DC converter for EEPROM IPs which perfom erasing by the FN (Fowler-Nordheim) tunneling and programming by the band-to-band tunneling is designed in this paper. For the DC-DC converter for EEPROM IPs using a low voltage of $1.5V{\pm}10%$ as the logic voltage, a scheme of using VRD (Read Voltage) instead of VDD is proposed to reduce the pumping stages and pumping capacitances of its charge pump circuit. VRD ($=3.1V{\pm}0.1V$) is a regulated voltage by a voltage regulator using an external voltage of 5V. The designed DC-DC converter outputs VPP (=8V) and VNN (=-8V) in the write mode.