• Advances in materials Research
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• v.12 no.3
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• pp.179-192
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• 2023

We have studied the structural and optical properties of the non-doped and Co 0.08 at.%, Co 0.02 at.%, and Co 0.11 at.% doped ZnO nanorods (NRs) synthesized using the simple low-temperature chemical bath deposition (CBD) method at 95℃ for 2 hours. The scanning electron microscope (SEM) images confirmed the morphology of the ZnO NRs are affected by Co incorporation. As observed, the Co 0.08 at.% doped ZnO NRs have a larger dimension with an average diameter of 153.4 nm. According to the International Centre for Diffraction Data (ICDD) number #00-036-1451, the x-ray diffraction (XRD) pattern of non-doped and Co-doped ZnO NRs with the preferred orientation of ZnO NRs in the (002) plane possess polycrystalline hexagonal wurtzite structure with the space group P63mc. Optical absorbance indicates the Co 0.08 at.% doped ZnO NRs have stronger and blueshift bandgap energy (3.104 ev). The room temperature photoluminescence (PL) spectra of ZnO NRs exhibited excitonicrelates ultraviolet (UV) and defect-related green band (GB) emissions. By calculating the UV/GB intensity, the Co 0.08 at.% is the proper atomic percentage to have fewer intrinsic defects. We predict that Co-doped ZnO NRs induce a blueshift of near band edge (NBE) emission due to the Burstein-Moss effect. Meanwhile, the redshift of NBE emission is attributed to the modification of the lattice dimensions and exchange energy.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.6
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• pp.283-290
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• 2013

A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.217-224
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• 2008

A stoichiometric mixture of evaporating materials for $ZnIn_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $ZnIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnIn_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.41\times10^{16}cm^{-3}$ and $292cm^2/v{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $ZnIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.8622eV-(5.23\times10^{-4}eV/K)T^2/(T+775.5K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnIn_2Se_4$ have been estimated to be 182.7 meV and 42.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnIn_2Se_4/GaAs$ epilayer. The three photo current peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-exciton$ for n = 1 and $C_{27}-exciton$ peaks for n = 27.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• Phonetics and Speech Sciences
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• v.14 no.3
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• pp.87-101
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• 2022

In addition to administering a questionnaire (J-survey), which questions individuals on subjective vocal fatigue, voice samples were collected before and after speech-language pathology sessions from 50 female speech-language pathologists in their 20s and 30s in the Daejeon and Chungnam areas. We identified significant differences in Korean Vocal Fatigue Index scores between the fatigue and non-fatigue groups, with the most prominent differences in sections one and two. Regarding acoustic phonetic characteristics, both groups showed a pattern in which low-frequency band energy was relatively low, and high-frequency band energy was increased after the treatment sessions. This trend was well reflected in the low-to-high ratio of vowels, slope LTAS, energy in the third formant, and energy in the 4,000-8,000 Hz range. A difference between the groups was observed only in the vowel energy of the low-frequency band (0-4,000 Hz) before treatment, with the non-fatigue group having a higher value than the fatigue group. This characteristic could be interpreted as a result of voice abuse and higher muscle tonus caused by long-term voice work. The perturbation parameter and shimmer local was lowered in the non-fatigue group after treatment, and the noise-to-harmonics ratio (NHR) was lowered in both groups following treatment. The decrease in NHR and the fall of shimmer local could be attributed to vocal cord hypertension, but it could be concluded that the effective voice use of speech-language pathologists also contributed to this effect, especially in the non-fatigue group. In the case of the non-fatigue group, the rhamonics-to-noise ratio increased significantly after treatment, indicating that the harmonic structure was more stable after treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.50-50
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• 1994

Half-metallic Heusler alloys (NiMnSb, ppdMnSb, pptMnSb) have attracted much attention due to their unique electronic and magnetic structures. Sppin-ppolarized band structure calculation ppredicts metallic behavior for the majority sppin states and semiconductor behavior for the minority sppin states. We have studied the electronic structures of these half-metallic Heusler alloys by core-level pphotoemission sppectroscoppy of Mn 2pp and 3s XppS sppectra. We found large intensities of Mn 2pp satellites and 3s exchange spplitting comppared with other metal Mn-alloys. These satellite structure can be understood by applying Anderson imppurity model. This fact supports the calculated sppin pprojected ppartial density of states which suggests that the valence electrons be highly sppin ppolarized near Fermi level and that the electrons involved with charge-transfer be mainly minority sppin ones which have semiconducting band structure. The trend of charge transfer energies Δ from ligands (Sb 5pp) to Mn 3d, obtained from our model fitting, is consistent with that calculated from sppin pprojected ppartial density of state. Also the trend of d-d electron correlation energies U calculated from Mn Auger line L3 VV by Mg $K\alpha$ source is comppatible with that resulted from our model fitting. We fitted the Mn 3s curve in the same way as for insulating Mn comppounds by using the same pparameters calculated from Mn 2pp curve fitting exceppt for the Coulomb interaction energy Q between core hole and d-electrons. The 3s sppectra were analyzed by combing the charge transfer model and a simpple model taking into account the configuration mixing effect due to the intra-shell correlation. We found that the exchange interaction between 3s hole and 3d electrons is mainly respponsible for the satellite of Mn 3s sppectra. This is consistent with the neutron scattering data, which suggests local 3d magnetic moment. We find that the XppS analysis results of Mn 2pp and 3s satellite structures of half-metallic Heusler alloys are very similar to those of insulating transition metal comppounds.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.6
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• pp.390-397
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• 2001

A novel self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. The proposed ESD structure is characterized by sidewall spacer and recessed-channel depth which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. Unlike the conventional LDD structures, it is shown that the GIDL current of the ESD structure is suppressed without sacrificing the maximum driving capability. The main reason for the reduction of GIDL current Is the decreased electric field at the point of the maximum band-to-band tunneling as the peak electric field is shifted toward the drain side.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.97-97
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• 2010

We demonstrate the hybrid polymer-quantum dot based multi-functional device (Organic bistable devices, Light-emitting diode, and Photovoltaic cell) with a single active-layer structure consisting of CdSe/ZnS semiconductor quantum-dots (QDs) dispersed in a poly N-vinylcarbazole (PVK) and 1,3,5-tirs- (N-phenylbenzimidazol-2-yl) benzene (TPBi) fabricated on indium-tin-oxide (ITO)/glass substrate by using a simple spin coating technique. The multi-functionality of the device as Organic bistable device (OBD), Light Emitting Diode (LED), and Photovoltaic cell can be successfully achieved by adding an electron transport layer (ETL) TPBi to OBD for attaining the functions of LED and Photovoltaic cell in which the lowest unoccupied molecular orbital (LUMO) level of TPBi is positioned at the energy level between the conduction band of CdSe/ZnS and LiF/Al electrode (band-gap engineering). Through transmission electron microscopy (TEM) study, the active layer of the device has a p-i-n structure of a consolidated core-shell structure in which semiconductor QDs are uniformly and isotropically adsorbed on the surface of a p-type polymer core and the n-type small molecular organic materials surround the semiconductor QDs.

• Structural Engineering and Mechanics
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• v.71 no.1
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• pp.45-56
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• 2019

A modified mechanical model of pre-pressed spring self-centering energy dissipation (PS-SCED) brace is proposed, and the hysteresis band is distinguished by the indication of relevant state variables. The MDOF frame system equipped with the braces is formulated in an incremental form of linear acceleration method. A multi-objective genetic algorithm (GA) based brace parameter optimization method is developed to obtain an optimal solution from the primary design scheme. Parameter sensitivities derived by the direct differentiation method are used to modify the change rate of parameters in the GA operator. A case study is conducted on a steel braced frame to illustrate the effect of brace parameters on node displacements, and validate the feasibility of the modified mechanical model. The optimization results and computational process information are compared among three cases of different strategies of parameter change as well. The accuracy is also verified by the calculation results of finite element model. This work can help the applications of PS-SCED brace optimization related to parameter sensitivity, and fulfill the systematic design procedure of PS-SCED brace-structure system with completed and prospective consequences.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.12
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• pp.1264-1271
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• 2009

In this paper, the chip slot antenna which is used for mobile devices and designed for multi-band is proposed. The proposed antenna is comprised of a chip antenna(10 mm$\times$20 mm$\times$1.27 mm) and a system circuit board(30 mm$\times$60 mm$\times$0.8 mm). The chip slot antenna is mounted on the system circuit board and the end of F-type strip line which is patterned on the chip antenna is connected by a via with a ground plane of the system circuit board. So, a chip antenna radiates effectively the energy by transition between a microstrip line of the system circuit board and a open slot structure of the chip antenna. In the results of proposed antenna, impedance bandwidth of 3:1 VSWR(-6 dB return loss) is 1.98 GHz(1.61~3.59 GHz) and 0.8 GHz(5.2~6 GHz). So, it can cover multi-band of DCS, PCS, UMTS, WLAN. The proposed antenna can be applied to mobile devices.