• 제목/요약/키워드: Electronic transitions

검색결과 151건 처리시간 0.02초

Luminescence, Excitation and Far-infrared Spectroscopy of cis-$\alpha$-Dichlorotriethyleneteraminechromium(III) Chloride

  • 최종하
    • Bulletin of the Korean Chemical Society
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    • 제19권5호
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    • pp.575-579
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    • 1998
  • The 77 K luminescence and excitation spectra, and 298 K infrared and absorption spectra of $cis-{\Alpha}-[Cr(trien)Cl_2]Cl{\cdot}H_2O$ (trien=triethylenetetramine) have been measured. Ligand field electronic transitions due to spin-allowed and spin-forbidden are assigned. The zero-phonon line in the excitation spectrum splits into two components by $198\; cm^{-1}$, and the large $^2E_g$ splitting can be reproduced by the modern ligand field theory. It is confirmed that nitrogen atoms of the trien ligand have a strong σ-donor character, but chloride ligand has weak σ- and π -donor properties toward chromium(III) ion.

MgGa$_2$Se$_4$신반도체 단결정을 사용한 광전도도 소자 제작에 관한 연구 (A Study on the Photoconductive Cell Production of New Semiconductor Using MgGa$_2$Se$_4$Single Crystals)

  • 김형곤;김형윤;이광석;이기형
    • 한국통신학회논문지
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    • 제17권1호
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    • pp.58-67
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    • 1992
  • MgGa2Se4 및 MgGa2Se4 : Co2+단결정을 bridgman 방법으로 성장하여 광흡수와 광발광을 가시광 영역과 근적외선 영역에서 조사하였다. 광흡수 스펙트럼은 MgGa2Se4단결정의 Td Symmetry를 갖는 host lattice에 점유하여 바닥상태와 여기상태의 Co2+ ion 에너지 ㅣlevel간 전자전이에 의해서 760nm, 1640nm, 그리고 2500nm에서 3개의 흡수피크를 관측하였다. 광발광 스펙트럼에서 이 단결정은 가시광 발광ㄸ들을 관찰하였다.가시영역의 발광 band들은 에너지 준위도에서 제안된 바와 같이 자전자대의 우의 꼭대기 acceptor 준위에서 전도대 아래의 밑에 분포된 trap으로부터 끊임없이 전자전에 의한다고 볼수 있다. 한편, 이들은 적외선 발광 band가 deep level에서 acceptor level부터 전자전이에 기인한다고 고려할 수 있다. 광전이의 mechanism은 MgGa2Se4 결정의 에너지 diagram의 항으로 잘 설명되고 있다.

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Atomistic simulation of surface passivated wurtzite nanowires: electronic bandstructure and optical emission

  • Chimalgi, Vinay U.;Nishat, Md Rezaul Karim;Yalavarthi, Krishna K.;Ahmed, Shaikh S.
    • Advances in nano research
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    • 제2권3호
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    • pp.157-172
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    • 2014
  • The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

BIST 환경에서의 천이 억제 스캔 셀 구조 (Transition Repression Architecture for scan CEll (TRACE) in a BIST environment)

  • 김인철;송동섭;김유빈;김기철;강성호
    • 대한전자공학회논문지SD
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    • 제43권6호
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    • pp.30-37
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    • 2006
  • 본 논문은 테스트 수행 중 발생하는 전력 소모를 줄이기 위한 변경된 스캔 셀 구조를 제안하고 있다. 이는 스캔 이동 중에 조합 회로 부분에서 발생하는 천이를 억제할 뿐 아니라 동시에 스캔 체인 내에서 발생하는 천이도 감소시킨다. 뿐만 아니라 캡쳐 싸이클에서 발생하는 천이 또한 제한시킨다. 제안하는 방식은 test-per-scan BIST 구조에 적합하고 싱글 스캔 구조 뿐 아니라 멀티 스캔 구조에도 적응 가능하다. 실험 결과는 제안하는 방법이 기존의 방법들과 비슷한 수준의 고장 검출율을 가지면서 보다 적은 전력을 소모한다는 것을 보여준다.

X-ray and dielectric study of the phase transition in PbFe1/2Nb1/2O3-PbCo1/2W1/2O3 ceramics

  • 박융;이홍민;김호기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 C
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    • pp.1239-1243
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    • 1997
  • A phase analysis in the solid solution of (1-x) PbFe1/2Nb1/2O3-xPbCo1/2W1/2O3 is conducted by dielectric properties, heat capacity and E-P hysteresis at x=0.1 interval. Lattice constants and superlattice intensity are analyzed by the x-ray diffraction, and the temperature - composition phase diagram is determined. The system is found to form a solid solution of perovskite structure throughout the entire composition range, but the nature of phase transitions changes from ferroelectric-paraelectric for $0{\leq}x{\leq}0.5$ to antiferroelectric-paraelectric for $0.6{\leq}x{\leq}1.0$. The transitions of ferroelectric-paraelectric and antiferroelectric-paraelectric for $0.2{\leq}x{\leq}0.5$ and for $0.6{\leq}x{\leq}0.8$, respectively, are diffuse, while those of the ferroelectric-paraelectric and the antiferroelectric-paraelectric for $0.0{\leq}x{\leq}0.1$ and $0.9{\leq}x{\leq}1.0$, respectively are sharp.

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Strain-induced islands and nanostructures shape transition's chronology on InAs (100) surface

  • Gambaryan, Karen M.;Aroutiounian, Vladimir M.;Simonyan, Arpine K.;Ai, Yuanfei;Ashalley, Eric;Wang, Zhiming M.
    • Advances in nano research
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    • 제2권4호
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    • pp.211-217
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    • 2014
  • The self-assembled strain-induced sub-micrometric islands and nanostructures are grown from In-As-Sb-P quaternary liquid phase on InAs (100) substrates in Stranski-Krastanow growth mode. Two samples are under consideration. The first sample consists of unencapsulated islands and lens-shape quantum dots (QDs) grown from expressly inhomogeneous liquid phase. The second sample is an n-InAs/p-InAsSbP heterostructure with QDs embedded in the p-n junction interface. The morphology, size and shape of the structures are investigated by high-resolution scanning electron (SEM) and transmission electron (TEM) microscopy. It is shown that islands, as they decrease in size, undergo shape transitions. Particularly, as the volume decreases, the following succession of shape transitions are detected: sub-micrometric truncated pyramid, {111} facetted pyramid, {111} and partially {105} facetted pyramid, completely unfacetted "pre-pyramid", hemisphere, lens-shaped QD, which then evolves again to nano-pyramid. A critical size of $5{\pm}2nm$ for the shape transformation of InAsSbP-based lens-shaped QD to nano-pyramid is experimentally measured and theoretically evaluated.

Photophysical Properties of Chlorotriethylphosphinegold(I)

  • Kang, Jun-Gill;Jeong, Yong-Kwang;Oh, Sung-Il;Kim, Hyun-Jun;Park, Chang-Moon;Tiekink, Edward R.R.
    • Bulletin of the Korean Chemical Society
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    • 제31권8호
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    • pp.2151-2157
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    • 2010
  • Spectroscopic and quantum mechanical studies of the Et3PAuCl complex were performed to characterize the effect of aurophilicity on the optical properties. When excited with UV light at low temperature, the crystalline complex produced a deep luminescence in both the blue (high-energy) and red (low-energy) regions of the spectrum. The intensity of the low-energy luminescence was markedly reduced in the powdered state and quenched in the solution state. Time-dependent density functional theory (TD-DFT) calculations on electronic structures of both the ground and excited states of aggregates $[Et_3PAuCl]_n$ (n = 1 - 3) indicated that the low-energy luminescence was attributable to Au-centered transitions, which are significantly affected by aurophilic interactions. By contrast, the high-energy luminescence appeared to be independent of the state of the complex and was strongly associated with the charge transfer from Cl to Au.

(Na0.54K0.46)0.96Li0.04(Nb1-0.10-xTa0.10Sbx)O3 세라믹스의 유전 및 압전 특성 (Dielectric and Piezoelectric Properties of (Na0.54K0.46)0.96Li0.04(Nb1-0.10-xTa0.10Sbx)O3 Ceramics)

  • 변선민;류주현
    • 한국전기전자재료학회논문지
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    • 제24권8호
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    • pp.622-626
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    • 2011
  • Lead-free piezoelectric ceramics with the composition of $(Na_{0.54}K_{0.46})_{0.96}Li_{0.04}(Nb_{1-0.10-x}Ta_{0.10}Sb_x)O_{3}$ (x= 0~8 mol%) were fabricated by nomal sintering at $1,090^{\circ}C$ for 5 h. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the Sb content. All samples exhibit a single perovskite phase over the whole compositional range. For the ceramics with x= 4 [mol%], two phase transitions are observed at $75^{\circ}C$ and $366^{\circ}C$, corresponding to the phase transitions of orthorhombic to tetragonal (To-t) and tetragonal to cubic (Tc), respectively. high electrical properties of $d_{33}$= 210.83 pC/N, kp= 40%, ${\varepsilon}_r$= 1,091.35, $\rho$= 4.54 g/$cm^2$ were obtained from the specimen with x= 4 [mol%], which suggests that the composition ceramics is a promising lead-free piezoelectric material.

기본 모드를 침해하는 과도 고장이 존재하는 입력/출력 비동기 순차 회로에 대한 내고장성 제어 (Fault-Tolerant Control of Input/Output Asynchronous Sequential Circuits with Transient Faults Violating Fundamental Mode)

  • 양정민;곽성우
    • 한국전자통신학회논문지
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    • 제17권3호
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    • pp.399-408
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    • 2022
  • 본 논문에서는 기본 모드 원리를 침해하는 과도 고장이 존재하는 입력/출력 비동기 순차 회로의 내고장성 교정 제어 시스템을 제안한다. 비동기 순차 회로의 과도 천이 과정에서 발생하는 비-기본 모드 고장을 극복하기 위해서는 고장에 의한 상태 천이가 종료되는 시점을 알아야 하며, 회로를 고장 상태로부터 원래 도달해야 하는 상태와 출력 등가적인 상태로 보내기 위한 교정 동작을 구현해야 한다. 본 논문에서는 이러한 고장 탐지 및 극복을 구현할 수 있는 출력 피드백 교정 제어기의 존재 조건을 규명한다. FPGA 실험을 통해 제안된 제어 시스템의 설계 과정을 제시하고 응용 가능성을 검증한다.

Effects of High-Energy Ball Milling and Sintering Time on the Electric-Field-Induced Strain Properties of Lead-Free BNT-Based Ceramic Composites

  • Nga-Linh Vu;Nga-Linh Vu;Dae-Jun Heo;Thi Hinh Dinh;Chang Won Ahn;Chang Won Ahn;Hyoung-Su Han;Jae-Shin Lee
    • 한국전기전자재료학회논문지
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    • 제36권5호
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    • pp.505-512
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    • 2023
  • This study investigated crystal structures, microstructures, and electric-field-induced strain (EFIS) properties of Bi-based lead-free ferroelectric/relaxor composites. Bi1/2Na0.82K0.18)1/2TiO3 (BNKT) as a ferroelectric material and 0.78Bi1/2(Na0.78K0.22)1/2TiO3-0.02LaFeO3 (BNKT2LF) as a relaxor material were synthesized using a conventional solid-state reaction method, and the resulting BNKT2LF powders were subjected to high-energy ball milling (HEBM) after calcination. As a result, HEBM proved a larger average grain size of sintered samples compared to conventional ball milling (CBM). In addition, the increased sintering time led to grain growth. Furthermore, HEBM treatment and sintering time demonstrated a significant effect on EFIS of BNKT/BNKT2LF composites. At 6 kV/mm, 0.35% of the maximum strain (Smax) was observed in the HEBM sample sintered for 12 h. The unipolar strain curves of CBM samples were almost linear, indicating almost no phase transitions, while HEBM samples displayed phase transitions at 5~6 kV/mm for all sintering time levels, showing the highest Smax/Emax value of 700 pm/V. These results indicated that HEBM treatment with a long sintering time might significantly enhance the electromechanical strain properties of BNT-based ceramics.