• Applied Science and Convergence Technology
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• 제26권6호
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• pp.214-217
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• 2017

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. We report the effect of growth temperature on structural properties of AlSb grown on GaAs substrate. In particular we studied the surface of AlSb with the growth temperature by atomic force microscopy, and concluded that optimized growth temperature of AlSb is $530^{\circ}C$. We also show the result of real-time monitoring of AlSb growth by in situ ellipsometry. The results of the structural study are good agreement with the previous reported ellipsometric data.

• 한국전기전자재료학회논문지
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• 제37권3호
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• pp.328-331
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• 2024

This research explores the development of [100]-textured barium titanate (BaTiO₃, BT) ceramics using sodium bismuth titanate (Na_0.5Bi_4.5Ti₄O₁₅, NBiT) templates, aimed at leveraging the inherent high dielectric property of BT. However, the attempted texturing was unsuccessful, primarily due to bismuth diffusion from the NBiT templates into the BT matrix below the sintering temperature, at 1,000℃. Systematical exploration about the cause of the failure is involved and alternative approaches are proposed in detail to overcome the challenge. These findings contribute to the understanding of techniques and conditions for textured ceramic fabrication and highlight the need for further research in this area.

• Journal of electromagnetic engineering and science
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• 제7권1호
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• pp.12-16
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• 2007

A UHF band wireless identification system based on passive surface acoustic wave(SAW) devices is presented in this paper. SAW ID tags were fabricated on Y-Z $LiNbO_3$ piezoelectric substrate with a good electro-mechanical coupling property. To reduce degradation of the antenna performance associated with the piezoelectric materials, an efficient design of the SAW RFID antenna is introduced. By measuring the parameters of the SAW ID tag, the performance of the antenna was tested by experimentation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.172-175
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• 2000

The crimping connection is a permanent connection that maintains mechanical and electrical property for a long time by crimping two conductors. In this paper, we have done a basic study to decide normal or abnormal condition depending on crimping. Using PZT piezo-sensor, we have analyzed crimping waveforms according to the crimping height. And hence the normal or abnormal condition of crimping connections in real time could be decided by comparison of crimping waveforms in the cases of normal crimping, over crimping, under crimping and core omitting.

• 한국전기전자재료학회논문지
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• 제25권2호
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• pp.96-99
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• 2012

We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.343-343
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• 2011

ZnO has been introduced as one of the good candidates for next generation opto-electronics. Recently, ZnO is known to be suitable for the transparent electrode in organic solar cells and light emitting devices. The contact with n-type organic material has been studied due to the n-type properties of ZnO. However, the surface of ZnO has shown different electronic property with respect to its surface orientation. Therefore, it is presumed that there are differences in the interfacial electronic structures between organic materials and ZnO with different orientation. Therefore, it is required to classify the interfacial electronic structures according to the surface orientation of ZnO. In this study, we measured the interfacial electronic structures between the ZnO substrate having various orientations and a typical n-type organic material, tris-(8-hydroxyquinoline) aluminum (Alq3). In-situ x-ray and ultraviolet photoelectron spectroscopy measurements revealed the interfacial electronic structures. We found the changes in the electronic structures with respect to the orientation of ZnO substrate and it could be used to improve the contact between ZnO and Alq3.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.217-218
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• 2007

Aluminum 분말과 고분자를 혼합하여 고분자-금속 복합재료(polymer-metal composite)를 만들어 copper foil과 기판의 접착력을 평가하였다. Tape casting 방법을 이용하여 sheet 만들고 vacuum lamination으로 PCB(Printed Circuit Board)기판을 제조한 후 포토공정으로 peel strength pattern을 형성하였으며, 본 연구에서는 최적의 aluminum 조건을 찾기 위하여 압력, 온도, copper foil의 표면 상태와 silane 표면 코팅에 따른 aluminum-polymer복합재료의 peel strength의 변화를 확인하였다. 최적의 조건은 silane 표면 코팅 처리를 한 aluminum 분말로 $210^{\circ}C$에서 $9.7kg/cm^2$ 압력으로 matte면의 돌기 크기가 크며, 응집이 잘 되어있는 copper foil을 사용하여 13.89N의 우수한 peel strength를 구현 할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.219-220
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• 2007

실란 커플링제 종류에 따른 $SrTiO_3$/유기물 복합재료의 유전특성에 미치는 영향을 조사하여 비교하였다. 실란 커플링제는 amino계, epoxy계, methacryloxy계, acryloxy계, vinyl계를 사용하였으며, tape casting 방법으로 제작한 복합체 필름을 vacuum lamination 공정을 통하여 기판을 만들어 유전특성을 측정하였다. 실란 괴플링제의 종류에 따라 유전특성은 상이한 결과를 나타냈으며, acryloxy계를 제외한 다른 커플링제를 처리한 복합재료는 유전상수와 유전손실이 감소하는 경향을 확인할 수 있었다. Acryloxy계 커플링제를 처리한 복합재료는 커플링제가 처리되지 않은 복합재료와 비교하여 유전상수가 6%정도 증가하였며, 유전손실은 25%정도 감소하였다.

• 대한화학회지
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• 제68권2호
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• pp.117-120
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• 2024

• 한국전기전자재료학회논문지
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• 제27권5호
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• pp.317-321
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• 2014

Hydrothermal synthesis technique could be carried out for growth of ZnO nanowires at relatively low process temperature, and it could be freely utilized with various substrates for fabrication process of functional electronic devices. However, it has also a demerit of relatively slow growth characteristics of the resulting ZnO nanowires. In this paper, an external DC bias of positive and negative 0.5 [V] was applied in the hydrothermal synthesis process for 2~8 [h] to prepare ZnO nanowires on a seed layer of AZO with high electrical conductivity. Growth characteristics of the synthesized ZnO nanowires were analyzed by FE-SEM. Material property of the grown ZnO nanowires was examined by PL analysis. The ZnO nanowires grown with positive bias revealed distinctively enhanced growth characteristics, and they showed a typical material property of ZnO.