• Title/Summary/Keyword: Electronic property

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Field Electron Emission from Amorphous Carbon Thin Film Grown Using Rf Magnetron Sputtering Method (RF 마그네트론 스퍼터링법으로 성장된 Amorphous carbon 각막의 전계전자방출)

  • ;;K. Oura
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.3
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    • pp.234-240
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    • 2001
  • Using RF magnetron sputtering, amorphous carbon(a-C) thin films as electron filed emitter were fabricated. these a-C thin films were deposited on Si(001) substrate at several temperatures. The field electron emission property of these a-C thin films was estimated by a diode technique. As the result, we observed that the field emission properties of the films were changed singnificantly with the substrate temperature and structural features of a-C film. The field emission properties were promoted by higher substrate temperatures. Furthermore N-doped a-C film exhibits more field emission property than that of undoped a-C film. These results are explained as change of surface morphology and structural properties of a-C film.

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The Oxidation Effect of Semiconductor Carbon Nanotube (반도체 탄소나노튜브의 산화열처리 효과)

  • Kim, Jwa-Yeon;Park, Kyung-Soon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.126-127
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    • 2005
  • Semiconductor carbon nanotube was grown on oxided silicon wafer with Atmosphere Pressure Chemical Vapor Deposition (APCVD) ethmod and investigated the electrical property after thermal oxidation at 300$^{\circ}C$ in air. The electrical property was measured at room temperature in air after thermal oxidation at 300$^{\circ}C$ for various times in air. Semiconductor carbon nanotube was steadily changed to metallic carbon nanotube as increasing of thermal oxidation times at 300$^{\circ}C$ in air.

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The effects of As addition on the transport property of a-Se:As films using the moving photo-carrier grating technique

  • Park, Chang-Hee;Lee, Kwang-Sei;Kim, Jeong-Bae;Kim, Jae-Hyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.11a
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    • pp.252-253
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    • 2005
  • The effects of As addition in amorphous selenium (a-Se) films on the carrier mobilities and the recombination lifetime have been studied using the moving photo-carrier grating (MPG) measurements. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions up to 1% have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density from shallow traps.

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Characteristics of CdS thin film depending on annealing temperature (열처리온도에 따른 CdS박막 특성)

  • 김성구;박계춘;유용택
    • Electrical & Electronic Materials
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    • v.7 no.1
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    • pp.49-56
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    • 1994
  • Polycrystalline CdS thin films were deposited by using EBE method and its crystal structure, surface morphology, electrical and optical properties as a function of annealing temperature were investigated. It was found that optimum growth conditions were substrate temperature annealing temperature 300[.deg. C]. The films were hexagonal structure preferred(002) plane and maximum grain size was 421[.angs.]. As the results, resistivity and optical transmittance of CdS thin films were $8.3{\times}{10^3}$[.ohm.cm] and 89[%] respectively.

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Improvement of Polarization Maintenance Property of Scattering Polarizer Film for Double-Screen 3D Projection Display Screen Applications Via Surface Oxide Deposition (산화막 증착을 통한 이중스크린 3D 프로젝션 디스플레이 스크린용 산란형 편광필름의 편광유지도 개선)

  • Kim, Dae-Yeon;Seo, Jong-Wook
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.4
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    • pp.1-6
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    • 2012
  • Keeping the polarization direction of the projection light unchanged is of crucial importance for high quality of images on a double-screen 3D projection display system. It has been found that the deposition of oxide layers on the surfaces of scattering polarizer film results in an improvement of polarization maintenance property of the film. The secondary image formed on the front screen by the light scattered from the rear screen decreases by 30% through the application of oxide layers on both surfaces of the screen. Since the oxide layer can also be used as an anti-reflection (AR) coating of the film, this method is very effective for the projection display applications.

Microstructure Property of High Voyage Motor Stator Insulation (고압전동기 고정자 권선 절연재료의 미세구조 특성)

  • 김희동;주영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.513-517
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    • 1999
  • High voltage motor(rated 6.6kV and 448kw) has failed in the stator endwinding area during normal service. Experiments on microstructure property were conducted using the control and aged insulations, which were drawn out from stator windings of the high voltage motor. The analyses were characterized using stereozoom microscope(SM), scanning electron microscope(SEM) and energy dispersive X-ray spectroscopy(EDS). SM result shows that large voids are present in the interface between turn insulation and groundwall insulation. SEM results indicated that the groundwall insulation is rarely thermal stress. EDS results showed that chemical elements in the high voltage motor stator insulations were Al, Si, O, K and Fe.

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Influence of Pd Concentration and Substrate Temperatures on the Magnetic Property in Permalloy Films (Pd 첨가와 기판온도 변화에 따른 퍼말로이 합금박막의 자기특성변화)

  • 이기영;송오성;윤종승;김경각
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.9
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    • pp.818-821
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    • 2002
  • We investigated the evolution of magnetic property with varying palladium (Pd) contents and elevating substrate temperatures up to 200 $^{\circ}C$ during dc-sputtering. We observed that saturation magnetization (Ms), remanence and anisotropic magnetoresistance (AMR) ratio decrease with Pd contents in the case of keeping the substrate temperature at 3$0^{\circ}C$. However they increase by adding 2 %Pd, then decrease above 3 %Pd when we keep the substrate temperature at 20$0^{\circ}C$. Coercivity does not change with Pd contents. Our results imply that we may tune the Ms and AMR with Pd contents and substrate temperature in permalloy films.

Electrochemical Property Measurement on Flyacenic Semiconductor(PAS) (PAS 전극에 관한 전기화학적 특성 측정)

  • 김한주;박수길;손원근;이홍기;이주성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.197-200
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    • 1999
  • The polyacene materials prepared from phenol resine at relatively low temperature(550~75$0^{\circ}C$) show a highly Li-doped state up to $C_2$Li state without liberation of Li cluster. We prepared each polyacenic materials various temperature and investigated electrochemical property. We tried to change the mole ratio of [H]/[C] that was 0.24~0.4 range and finally found that the further discussion of improvements of battery materials. The X-ray structural analyses have shown that this material is essentiallly amorphous with loose structure in molecular size order. This structure ensures that the PAS battery has both reliability on repetitive doping-undoping processes and higher energy density than other batteries. The PAS electrode has been confirmed to show good stability and reversibility.

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Annealing Effect of the Chalcogenide Thin Film for Holographic Grating Formation (홀로그래픽 격자 형성에 대한 칼코게나이드 박막의 열처리 효과)

  • Park, Jung-Il;Shin, Kyung;Lee, Jung-Tae;Lee, Young-Jong;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.8
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    • pp.736-739
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    • 2003
  • We prepared the chalcogenide As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/, Se$\_$75/Ge$\_$25/ thin film. Holographic grating was formed by the He-Ne laser( λ =633 nm). Annealing at 100$^{\circ}C$ and 200$^{\circ}C$ has been used to change the optical property of chalcogenide thin films for holographic grating formation. As the results, large variation of the optical property was generated at the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ chalcogenide film. Diffraction efficiency of the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35/ film has been enhanced about three times

Study on the magnetic porcelain materials (자성을 나타내는 도자기 소지의 연구)

  • Cho, Tae-Sik;Kim, Ji-Sik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05a
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    • pp.88-91
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    • 2003
  • The magnetic porcelain materials were studied by using the porcelain materials added Sr-ferrite powders before forming and firing process. For the high magnetic property, the Sr-ferrite magnetic powders with the grain size of 1 ${\mu}m$ were agglomerated the powder size of about 1 mm. The magnetic porcelain with 30 wt% of Sr-ferrite powders indicated the magnetic characteristics such as the remanent flux density of 240 G and the intrinsic coercivity of 3910 Oe, at the firing conditions of $1250^{\circ}C$/1hr in air.

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