Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 7 Issue 1
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- Pages.49-56
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- 1994
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Characteristics of CdS thin film depending on annealing temperature
열처리온도에 따른 CdS박막 특성
Abstract
Polycrystalline CdS thin films were deposited by using EBE method and its crystal structure, surface morphology, electrical and optical properties as a function of annealing temperature were investigated. It was found that optimum growth conditions were substrate temperature annealing temperature 300[.deg. C]. The films were hexagonal structure preferred(002) plane and maximum grain size was 421[.angs.]. As the results, resistivity and optical transmittance of CdS thin films were
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