• Proceedings of the Computational Structural Engineering Institute Conference
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• 2002.04a
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• pp.470-477
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• 2002

Possibility of passive piezoelectric damping based on a new shunting parameter estimation method is studied using finite element analysis. The adopted tuning method is based electrical impedance that is found at piezoelectric device and the optimal criterion for maximizing dissipated energy at the shunt circuit. Full three dimensional finite element model is used for piezoelectric devices with cantilever plate structure and shunt electronic circuit is taken into account in the model. Electrical impedance is calculated at the piezoelectric device, which represents the structural behavior in terms of electrical field, and equivalent electrical circuit parameters for the first mode are extracted using PRAP (Piezoelectric Resonance Analysis Program). After the shunt circuit is connected to the equivalent circuit for the first mode, the shunt parameters are optimally decided based on the maximizing dissipated energy criterion. Since this tuning method is based on electrical impedance calculated at piezoelectric device, multi-mode passive piezoelectric damping can be implemented for arbitrary shaped structures.

• Journal of Applied Reliability
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• v.10 no.2
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• pp.137-148
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• 2010

This study deals with the accelerated life test of high power phosphor converted white Light Emitting Diodes (High power LEDs). Samples were aged at $110^{\circ}C$/85% RH and $130^{\circ}C$/85% RH up to 900 hours under non-biased condition. The stress induced a luminous flux decay on LEDs in all the conditions. Aged devices exhibited modification of package silicon color from white to yellowish brown. The instability of the package contributes to the overall degradation of optical lens and structural degradations such as generating bubbles. The degradation mechanisms of lumen decay and reduction of spectrum intensity were ascribed to hygro-mechanical stress which results in package instabilities.

• Vacuum Magazine
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• v.4 no.4
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• pp.4-13
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• 2017

Quantum structures containing nanoparticles have attracted much attention because of their promising potential applications in electronic and optoelectronic devices operating at lower currents and higher temperatures. The quantum dot is a particle of matter so small that the addition or removal of an electron changes its properties in some useful way. The Quantum dots typically have dimensions measured in nanometers, where one nanometer is 10-9 meter or a millionth of a millimeter. The emission and absorption spectra corresponding to the energy band gap of the quantum dot is governed by quantum confinement principles in an infinite square well potential. The energy band gap increases with a decrease in size of the quantum dot. In this review paper, we will discuss the quantum dot and their application.

• International Journal of Railway
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• v.2 no.3
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• pp.107-112
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• 2009

Research projects of SNCF aim at reducing the costs of infrastructure possessions and improving the operational equipment availability and safety. This permanent search for a better regularity led the SNCF to analyse the maintenance approach of signalling equipment in detail. Until now, it was commonly acknowledged that signalling equipment, which consists of many electronic devices, is not subject to aging. In this study, a Weibull lifetime model, able to describe an aging phenomenon, is used and it can be shown that the deterioration is statistically significant. The validity of the model is tested. We also analyse the influence of environmental covariates. We simulate different scenarios in order to investigate the impact of several maintenance strategies as well as on future maintenance costs, on the amount of components to replace based on the mean age of the network. It can be shown that in most cases a systematic replacement strategy offers the best solution.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.39-44
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• 2003

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.28 no.1A
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• pp.34-40
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• 2003

Because that the wireless LAN and the Bluetooth which are currently used are operating at the ISM 2.4GHz, we must meet the frequency interference So performance degradation is occurred by frequency interference between the wireless LAN and the Bluetooth In this paper, for decreasing the errors between the communication systems because of the interferences, we analysis the influence of mutual interference between the local communication systems and the specification of frequency interference problem on the Bluetooth, the wireless LAN and home electronic products

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.58-62
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• 2001

Since Metallo-Porphyrin (MP) is very interesting compound due to its unique electronic and redox properties and it is also chemically and thermally stable, MP has been studied for potential memory and switching devices. In this study, thin films of 5,10,15,20-Tetrakis-Octadecyloxymethylphenyl-Porphyrin-Zn(II) were prepared by the Langmuir-Blodgett (LB) method and characterized by using UV/vis absorption spectroscopy and cyclic voltammetry. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was 135 ${\AA}^2$/molecule. The current-voltage (I-V) characteristics of these films were investigated. Further details on the electrical properties of Porphyrin-Zn(II) derivative films will be discussed.

• Proceedings of the KIEE Conference
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• 2001.07d
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• pp.2561-2563
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• 2001

This research is about the remote control of the infra-ray signal producer and the received signal memory-type control unit. Also by using the infra-ray signal from the remote control, reduction of malfunctions due to infra-ray signal from other devices are presented. Applications on various electric and electronic items to improve the convenience are also shown.

• Journal of electromagnetic engineering and science
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• v.8 no.1
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• pp.6-11
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• 2008

Advances in low power design open the possibility to harvest energy from the environment to power electronic circuits. Electrical energy can be harvested from piezoelectric transducer. Piezoelectric materials can be used as mechanisms to transfer mechanical energy usually vibrating system into electrical energy that can be stored and used to power other devices. Micro- to milli-watts power can be generated from vibrating system. We developed definitive and analytical models to predict the power generated from a cantilever beam attached with piezoelectric transducer. Analytical models are pin-force method, enhanced pin-force method and Euler-Bernoulli method. Harmonic oscillations and random noise will be the two different forcing functions used to drive each system. It has been selected the best model for generating electric power based upon the analytical results obtained.

• Ceramist
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• v.21 no.1
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• pp.98-111
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• 2018

The lead-based perovskite (CH3NH3PbI3) material has a high molar coefficient, high crystallinity at low temperature, and long range of balanced electron-hole transport length. In addition, PCE of perovskite solar cells (PSCs) has been dramatically improved by over 22% by amending the electronic quality of perovskite and by using state-of-the-art hole transporting materials (HTMs) such as tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) due to enhanced charge transport toward the electrode via properly aligned energy levels with respect to the perovskite. Replacing the spiro-OMeTAD with new HTMs with the desired properties of appropriate energy levels, high hole mobility in its pristine form, low cost, and easy processable materials is necessary for attaining highly efficient and stable PSCs, which are anticipated to be truly compatible for practical application. Furthermore, Recently Pb-free perovskite materials much attention as an alternative light-harvesting active layer material instead of lead based perovskite in photovoltaic cells. In this work, we demonstrate a Pb-free perovskite material for the light harvesting and emitter as optoelectronic devices.