• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.7
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• pp.417-422
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• 2017

A high-performing photoelectric device was realized for the $MoS_2$-embedded Si device. $MoS_2$-coating was performed by an available large-scale sputtering method. The $MoS_2$-layer coating on the p-Si spontaneously provides the rectifying current flow with a significant rectifying ratio of 617. Moreover, the highly optical transmittance of the $MoS_2$-layer provides over 80% transmittance for broad wavelengths. The $MoS_2$-embedded Si photodetector shows the sensitive photo-response for middle and long-wavelength photons due to the functional $MoS_2$-layer, which resolves the conventional limit of Si for long wavelength detection. The functional design of $MoS_2$-layer would provide a promising route for enhanced photoelectric devices, including photovoltaic cells and photodetectors.

• Journal of Photoscience
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• v.8 no.3_4
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• pp.113-117
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• 2001

Several styrylquinolium salts were synthesized to investigate their absorption and thermal properties, which had five different p-aminobenzene units and three different counter ions (iodide, perchlorate, and hexafluorophosphorate anion), respectively. Hydroxy, methoxy, and methyl group in the meta position to the amino group led to bathochromic shift, while Ν-ethyl-Ν-chloroethylamino unit instead of Ν,Ν-diethylamino unit resulted in hypsochromic shift. A dye having a methoxy group in the meta position to the amino group had the highest molar extinction coefficient ($\xi$), while a dye carrying chloro group in Ν-alkyl chains had the lowest $\xi$. The type of counter ions had no effect on spectral properties like the maximum absorption wavelength and $\xi$. All styryl dyes had exothermic peaks at decomposition in DSC curves. Among these styryl dyes, S2 series with perchlorate anions showed the strongest exothermic decomposition. From TGA spectra, S3 series with hexafluorophosphorate anions had the best thermal stability and the sharpest threshold at thermal decomposition.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.96-102
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• 2009

This paper deals with gate drive and power IC for high power devices(600V/200A and 1200V/150A). The proposed gate driver provides high gate driving capability (4 A source, 8 A sink), and over-current protected by means of power transistor desaturation detection. In addition, soft-shutdown function is added to reduce voltage overshoots due to parasitic inductance. This gate drive If is designed, fabricated, and tested using the Dongbu hitek 0.35um BCDMOS process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.42-49
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• 2007

This paper introduces a study on reliability-driven device placement using simulated annealing algorithm which can be applicable to MCM or electronic systems embedded in a spacecraft running at thermal conduction environment. Reliability of the unit's has been predicted with the devices' junction temperatures calculated from FDM solver and optimized by simulated annealing algorithm. Simulated annealing in this paper adopts swapping devices method as a perturbation. This paper describes and compares the optimization simulation results with respect to two objective functions: minimization of failure rate and minimization of average junction temperature. Annealing temperature variation simulation case and equilibrium coefficient variation simulation case are also presented at the two respective objective functions. This paper proposes a new approach for reliability optimization of MCM and electronic systems considering those simulation results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.213-217
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• 2007

Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.17-17
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• 2009

We report the invention of a direct growth method termed On-Film Formation of Nanowire (OFF-ON) for making high-quality single-crystal nanowires, i.e. Bi and $Bi_2Te_3$, without the use of conventional templates, catalysts, or starting materials. We have used the OFF-ON technique to grow single crystal semi-metallic Bi and compound semiconductor $Bi_2Te_3$ nanowires from sputtered Bi and BiTe films after thermal annealing, respectively. The mechanism for nanowire growth is stress-induced mass flow along grain boundaries in the polycrystalline films. OFF-ON is a simple but powerful method for growing perfect single-crystal semi-metallic and compound semiconductor nanowires of high aspect ratio with high crystallinity that distinguishes it from other competitive growth approaches that have been developed to date. Our results suggest that Bi and $Bi_2Te_3$ nanowires grown by OFF-ON can be an ideal material system for exploring their unique thermoelectric properties due to their high-quality single crystalline and high conductivity, which have consequence and relevance for high-efficiency thermoelectric devices.

• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.159-163
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• 2014

More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1925-1926
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• 2008

본 논문에서는 UHF TV방송 전 대역 Ch.14(473MHz)$\sim$Ch.69(803MHz)까지의 모든 채널에서 동작하는 유도결합구조의 RF동조회로를 설계하였다. 기존 자기결합구조의 RF동조회로는 PCB 양면을 사용하여야 하고 수작업으로 Air Coil 간격을 조절해야만 한다. 부품의 집적화와 양산 효율성 측면에서 자기결합구조의 단점을 해결할 수 있도록 하기 위해 본 논문에서 제안한 유도결합구조는 수동부품인 칩인덕터와 칩커패시터 및 가변용량 다이오드만을 사용하여 RF동조회로를 설계하였다. 칩인덕터는 Air Coil에 비해 낮은 소자 Q값을 가진다. 상대적으로 낮은 Q값을 갖는 칩인덕터를 사용하기 때문에 이를 보완하기 위해 Peaking용 칩인덕터를 설계 디자인에 적용하였다. 가변형 대역통과필터로 동작하기 위해 자기결합구조와 동일하게 가변용량 다이오드를 이용하였다. UHF TV방송 전 대역(470$\sim$806MHz)에서 -2.88 $\sim$ -3.97dB의 삽입손실 특성 및 -8dB 이상의 반사손실 특성과 330MHz의 중심주파수 변화 범위를 갖는다. 현재 상용중인 지상파 튜너에 적용되고 있는 자기결합구조의 RF동조회로를 대치하여 적용될 수 있을 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.180.2-180.2
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• 2014

Opening a bandgap by forming graphene nanoribbons (GNRs) and tailoring their properties via doping is a promising direction to achieve graphene-based advanced electronic devices. Applying a first-principles computational approach combining density functional theory (DFT) and DFT-based non-equilibrium Green's function (NEGF) calculation, we herein study the structural, electronic, and charge transport properties of boron-nitrogen binary edge doped GNRs and show that it can achieve novel doping effects that are absent for the single B or N doping. For the armchair GNRs, we find that the B-N edge co-doping almost perfectly recovers the conductance of pristine GNRs. For the zigzag GNRs, it is found to support spatially and energetically spin-polarized currents in the absence of magnetic electrodes or external gate fields: The spin-up (spin-down) currents along the B-N undoped edge and in the valence (conduction) band edge region. This may lead to a novel scheme of graphene band engineering and benefit the design of graphene-based spintronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.277.2-277.2
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• 2014

For next-generation electronic applications, human-machine interface devices have recently been demonstrated such as the wearable computer as well as the electronic skin (e-skin). For integration of those systems, it is essential to develop many kinds of components including displays, energy generators and sensors. In particular, flexible sensing devices to detect some stimuli like strain, pressure, light, temperature, gase and humidity have been investigated for last few decades. Among many condidates, a pressure sensing device based on organic field-effect transistors (OFETs) is one of interesting structure in flexible touch displays, bio-monitoring and e-skin because of their flexibility. In this study, we have investigated a flexible e-skin based on highly sensitive, pressure-responsive OFETs using microstructured ferroelectric gate dielectrics, which simulates both rapidly adapting (RA) and slowly adatping (SA) mechanoreceptors in human skin. In SA-type static pressure, furthermore, we also demonstrate that the FET array can detect thermal stimuli for thermoreception through decoupling of the input signals from simultaneously applied pressure. The microstructured highly crystalline poly(vinylidene fluoride-trifluoroethylene) possessing piezoelectric-pyroelectric properties in OFETs allowed monitoring RA- and SA-mode responses in dyanamic and static pressurizing conditions, which enables to apply the e-skin to bio-monitoring of human and robotics.