• 한국전기전자재료학회논문지
• /
• 제29권1호
• /
• pp.11-16
• /
• 2016

The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than $250^{\circ}C$, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.

• 공업화학
• /
• 제21권2호
• /
• pp.115-128
• /
• 2010

마이크로 프로세서 및 항공 우주산업의 기술 발전에 따른 냉각 조건이 까다로워짐에 따라 각종 산업에서 열 전도 향상을 통한 기기 내에서 외부로의 열 배출은 최근 각광을 받고 있다. 특히 열 전도성 고분자 복합재료의 경우 매우 다양한 물질을 사용하여 그 요구조건에 맞는 부품의 생산이 가능하고 가공 편의성으로 인한 마이크로 부품에서부터 큰 부속품까지 그 사용 범위가 넓다. 방열 소재로 사용되는 고분자 복합재료의 열전도도 예측 모델 식을 알아보고 방열 소재에 대해 알아보며 상업적으로 많이 사용되고 있는 충전제에 대해 다룬다. 또한 최근의 고분자 복합재료 방열소재의 동향에 대해 알아본다.

• Transactions on Electrical and Electronic Materials
• /
• 제15권4호
• /
• pp.189-192
• /
• 2014

Yttria-stablized zirconia (YSZ) is the most commonly used electrolyte material, but the reduction in working temperature leads to insufficient ionic conductivity. Ceria based electrolytes (GDC) are more attractive in terms of conductivity at low temperature, but these materials are well known to be reducible at very low oxygen partial pressure. The reduction of electrolyte resistivity is necessary to overcome cell performance losses. So, thin YSZ/GDC bilayer technology seems suitable for decreasing the electrolyte resistance at lower operating temperatures. Bilayer electrolytes composed of a galdolinium-doped $CeO_2$ ($Ce_{0.9}Gd_{0.1}O_{1.95}$, GDC) layer and yttria-stabilized $ZrO_2$ (YSZ) layer with various thicknesses were deposited by RF sputtering and E-beam evaporation. The bilayer electrolytes were deposited between porous Ni-GDC anode and LSM cathode for anode-supported single cells. Thin film structure and surface morphology were investigated by X-ray diffraction (XRD), using $CuK{\alpha}$-radiation in the range of 2ce morphol$^{\circ}C$. The XRD patterns exhibit a well-formed cubic fluorite structure, and sharp lines of XRD peaks can be observed, which indicate a single solid solution. The morphology and size of the prepared particles were investigated by field-emission scanning electron microscopy (FE-SEM). The performance of the cells was evaluated over $500{\sim}800^{\circ}C$, using humidified hydrogen as fuel, and air as oxidant.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.304-304
• /
• 2006

Ternary tellurite glassy systems ($Li_2O-V_2O_5-TeO_2$) have been synthesised using Vanadium oxide as a network former and Lithium oxide as network modifier. The addition of a metal oxide makes them electric or mixed electric-ionic conductors, which are of potential interest as cathode materials for solid-state batteries. This glass-ceramics crystallized from the $Li_2O-V_2O_5-TeO_2$ system are particularly interesting, because they exhibit high conductivity (up to $5.63{\times}10^{-5}$ S/cm) at room temperature the glass samples were prepared by quenching the melt on the copper plate and the glass-ceramics were heat-treated at crystallizing temperature determined from differential thermal analysis (DTA). The electric DC conductivity result have been analyzed in terms of a small polaron-hopping model.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권6호
• /
• pp.572-577
• /
• 1996

Alternating current and direct current of pure, ball milled, and $Al_{2}$O$_{3}$ added ZnO were investigated by means of complex impedance measurement and voltage-current source measurement unit. The electrical conductivity of A1$_{2}$O$_{3}$ added ZnO samples increases when the content of A1$_{2}$O$_{3}$ is used within 1 at% and decreases when it's used more than that. The increase and decrease of electrical conductivity seem to be the donor effect of $Al_{2}$O$_{3}$ and the increase of the number of ZnO grains, respectively. Impedance spectrum seems to be one semircicle. The size of semicircle increase with increasing the A1$_{2}$O$_{3}$ contents. The calculated dielectric constant(at 50.deg. C) were about 70-140 at the peak of the semicircle. The semicircles seem not to be the resistance of ZnO grain as compared to that of 10 for pure ZnO.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.799-802
• /
• 2003

[ $LaNiO_3$ ](LNO) thin films were deposited on various substrates as Si and $Al_2O_3$ by sol-gel process using lanthanum nitrate and nickel acetate. The structure and orientation of the films were characterized by X-ray diffraction. The orientation factors of films on Si(100), Si(111), $SiO_2/Si(100)$ and $Al_2O_3$were 97%, 63%, 73%, and 24% respective. The conductivity was $7.6{\times}10^{-3}{\Omega}{\cdot}cm$ with 10 times coating at Si(100) substrate.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.675-678
• /
• 2004

[ $CuAlO_2$ ] was used as P-type transparent conducting oxide. $CuAlO_2$ ceramics was obtained from heating a stoichiometric mixture of $Cu_2O$ and $Al_2OH_3$ at $1200^{\circ}C$ for 6h. $CuAlO_2$ ceramics were doped by the rate of 0, 5, 7 and 10% of the $BeSO_4{\cdot}4H_2O$. Sintered ceramics were investigated by X-ray diffraction (XRD) and electrical measurements. The room temperature conductivity of the ceramics, which were doped with $BeSO_4{\cdot}4H_2O$ 5wt% was of the order of $3.19\times10^{-3}S\;cm^{-1}$, and the density was $4.98g/cm^3$. Therefor the conductivity and density in $BeSO+4{\cdot}4H_2O$ 5wt% were better than other cases. Additionally, Seebeck cofficient measurements revealed that these ceramics were p-type semiconductors and the ceramic conductivity increased with the growth temperature.

• Journal of Electrochemical Science and Technology
• /
• 제9권2호
• /
• pp.133-140
• /
• 2018

$Sr_{0.92}Y_{0.08}Ti_{0.5}Fe_{0.5}O_{3-{\delta}}$ (SYTF0.5) is investigated as an alternative anode in $H_2$ fuels containing $H_2S$ (0-200 ppm). Although additional ionic conductivity is introduced by aliovalent substitution of $Ti^{4+}$ by $Fe^{3+}$ in the B-site, the SYTF0.5 has lower electrical conductivity than that of the $Sr_{0.92}Y_{0.08}TiO_{3-{\delta}}$. Due to the mixed ionic and electronic conductive (MIEC) property exhibited in the SYTF0.5 anode, the electrochemical performance of the SYTF0.5 anode is improved, as well as the sulfur tolerance. The maximum power densities in $H_2$ at $900^{\circ}C$ for the SYT anode and the SYTF0.5 anode were 56.9 and $98.6mW/cm^2$, respectively. The maximum power density in the SYTF0.5 anode at 200 ppm of $H_2S$ concentration decreased by only 12.9% (86.3 to $75.2mW/cm^2$).

• 한국전기전자재료학회논문지
• /
• 제16권11호
• /
• pp.1055-1061
• /
• 2003

A study has been made of surface modification of various organic materials by ion implantation to increase the surface electrical properties. The substrate used were PP(polypropylene), PET(polyethylene teraphthalate), ECOP(ethylene copolyester), PS(polystyrene). N$_2$, Ar ion implantation was performed at energies of 40 and 50keV with fluences from 5${\times}$ 10$\^$15/ to 7${\times}$10$\^$16/ ions/$\textrm{cm}^2$ with and without H$_2$O gas environment. Surface resistance decrease of implanted polymers was affected by ion implantation energy, ion species, atmosphere of chamber and kind of polymer. In result, surface conductivity of polymers irradiated with atmosphere gas H$_2$O was 10 times more higher than normal vacuum atmosphere, but after 90 hours, surface conductivity returned to the without H$_2$O gas atmosphere condition caused by aging effect. After vacuum forming, surface resistance value was changed to over 10$\^$16/$\Omega$/$\square$, because creation of surface cracks.

• 한국전기전자재료학회논문지
• /
• 제17권2호
• /
• pp.236-241
• /
• 2004

New electrolytes of cubic L $a_2$M $o_2$-x Nbx $O_{9-}$$\delta$/(x=0, 0.05, 0.1, 0.2) were fabricated by a solid-state reaction method and their sintered densities were approximately 93％ of theoretical density. X-ray diffraction analysis and microstructure observation for the sintered specimens were performed. The at complex impedance were measured at 34$0^{\circ}C$ to 93$0^{\circ}C$ in air and fitted with a Solatron ZView program. Their impedance spectra showed big difference below and over the phase transition temperature (58$0^{\circ}C$). The electrical conductivity of L $a_2$M $o_2$ $O_{9}$ was 1.36${\times}$10$^{-2}$ S$cm^{-1}$ / at 817$^{\circ}C$. Comparing to undoped L $a_2$M $o_2$ $O_{9}$ , Nb-doped specimen showed the increase of electrical conductivity due to the aliovalent doping effect..