Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Formation and conductivity of oriented $LaNiO_3$ thin films on Si and $Al_2O_3$ substrates

Si와 $Al_2O_3$ 기판에 대한 $LaNiO_3$ 박막의 배향성 형성과 도전도

  • 김대영 (부경대학교 전자공학과) ;
  • 박민석 (부경대학교 전자공학과) ;
  • 손세모 (부경대학교 화상정보공학부) ;
  • 이명교 (부경대학교 전자공학과) ;
  • 김강언 (부경대학교 전자공학과) ;
  • 정수태 (부경대학교 전자공학과)
  • Published : 2003.07.10
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Abstract

[ $LaNiO_3$ ](LNO) thin films were deposited on various substrates as Si and $Al_2O_3$ by sol-gel process using lanthanum nitrate and nickel acetate. The structure and orientation of the films were characterized by X-ray diffraction. The orientation factors of films on Si(100), Si(111), $SiO_2/Si(100)$ and $Al_2O_3$were 97%, 63%, 73%, and 24% respective. The conductivity was $7.6{\times}10^{-3}{\Omega}{\cdot}cm$ with 10 times coating at Si(100) substrate.

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