• 한국세라믹학회지
• /
• 제52권1호
• /
• pp.1-8
• /
• 2015

Thermoelectric (TE) technology is becoming increasingly important in applications of solid-state cooling and renewable energy sources. $Bi_2Te_3$-based TE materials are widely used in small-scale cooling and temperature control applications; however, higher levels of TE performance are required for new applications such as large-scale cooling (e.g., domestic refrigerators or air conditioners) and for highly efficient power generation system. Recently, the TE performance of $Bi_2Te_3$-based materials has been remarkably enhanced by the introduction of nanostructuring technologies which can be used to prepare TE raw materials. Because it takes into account the theoretical and experimental characteristics, nanostructuring has been shown to be one of the most promising ways to realize the simultaneous control of the electronic and thermal transport properties. In this review, emphasis is placed on bulk-type nanostructured $Bi_2Te_3$-based TE materials. Nanostructuring technologies for enhanced TE performance are summarized, and a few important strategies are presented.

• 센서학회지
• /
• 제8권3호
• /
• pp.239-246
• /
• 1999

MOCVD로 성장된 p-i-n 구조의 InSb 웨이퍼를 이용하여 $3{\sim}5\;{\mu}m$ 영역의 적외선을 감지할 수 는 고감도 광기전력 형태의 적외선 광다이오드를 제조하였다. InSb는 녹는점과 표면원자들의 증발온도가 낮기 때문에 광다이오드의 접합계면과 표면의 절연보호막으로 $SiO_2$ 박막을 원격 PECVD를 이용하여 성장시켰다. 광다이오드의 저항성 접촉을 위해 In을 증착하였고 77K의 암상태에서 전류-전압 특성을 조사하였다. 영전위 저항과 수광면적의 적($R_0A$)이 $1.56{\times}10^6\;{\Omega}{\cdot}cm^2$의 높은 값을 가졌는데 이는 BLIP 조건을 만족하는 높은 값이었다. InSb 광다이오드에 적외선을 입사 했을때 $10^{11}\;cm{\cdot}Hz^{1/2}{\cdot}W^{-1}$의 매우 높은 정규화된 검지도를 나타내었다. 높은 양자효율과 검지도로 인해 제조된 InSb 적외선 단위 셀을 적외선 array에 그 적용이 가능할 것으로 보인다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.364.2-364.2
• /
• 2014

Magnesium oxide (MgO) thin films have attracted great scientific and technological interest in recent decades. Because of its distinguished properties such as a wide band gap (7.2 eV), a low dielectric constant (9.8), a low refractive index, an excellent chemical, and thermal stability (melting point=$2900^{\circ}C$), it is widely used as inorganic material in diverse areas such as fire resistant construction materials, optical materials, protective layers in plasma display panels, buffer layers of multilayer electronic/photonic devices, and perovskite ferroelectric thin films. Precursor used in the ALD requires volatility, stability, and low deposition temperature. Precursors using a heteroleptic ligands with different reactivity have advantage of selective reaction of the heteroleptic ligands on substrate during ALD process. In this study, we have synethesized new heteroleptic magnesium precursors ${\beta}$-diketonate and aminoalkoxide which have been widely used for the development of precursor because of the excellent volatility, chelating effects by increasing the coordination number of the metal, and advantages to synthesize a single precursor. A newly-synthesized Mg(II) precursor was adopted for growing MgO thin films using ALD.

• 한국재료학회지
• /
• 제14권6호
• /
• pp.443-450
• /
• 2004

Parylene polymer thin film shows excellent homogeneous coverage chracteristics when it was deposited onto very complex three dimensional solid matters, such as deep hole and micro crack. The parylene deposition process can be conducted at room temperature although most of chemical vapor deposition processes request relatively high processing temperature. Therefore, the parylene coating process does not induce any thermal problems. Parylene thin film is transparent and has extremly high chemical stability. For example, it shows high chemical stability with high reactive chemical solutions such as strong acid, strong alkali and acetone. The bio-stability of this material gives good chances to use for a packaging of biomedical devices and electronic devices such as display. In this review article, principle of deposition process, properties and application fields of parylene polymer thin film are introduced.

• 한국전기전자재료학회논문지
• /
• 제27권11호
• /
• pp.712-717
• /
• 2014

Glass ceramic has a high mechanical strength and low sintering temperature. So, it can be used as a thick film substrate or a high strength insulator. A series of glass ceramic samples based on MgO-$Al_2O_3-SiO_2-ZrO_2$ (MASZ) were prepared by melting at $1,600^{\circ}C$, roll-quenching and heat treatment at various temperatures from $900^{\circ}C$ to $1,400^{\circ}C$. Dependent on the heat treatment temperature used, glass ceramics with different crystal phases were obtained. Their nucleation behavior, microstructure and mechanical properties were investigated with differential thermal analysis (DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), and Vicker's hardness testing machine. With increasing the heat treatment temperature of MASZ samples, their hardness and toughness initially increase and then reach the maximum points at $1,300^{\circ}C$, and begin to decrease at above this temperature, which is likely to be due to the softening of glass ceramics. As the content of $ZrO_2$ in MAS glass ceramics increases from 7.0 wt.% to 13 wt.%, Vicker's hardness and fracture toughness increase from $853Kg/mm^2$ to $878Kg/mm^2$ and $1.6MPa{\cdot}m^{1/2}$ to $2.4MPa{\cdot}m^{1/2}$ respectively, which seems to be related with the nucleation of elongated phases like fiber.

• Current Photovoltaic Research
• /
• 제6권2호
• /
• pp.39-42
• /
• 2018

When the PV module is illuminated in a high temperature region, solar cells are also exposed to the high temperature external environment. The operating temperature of the solar cell inside the module is increased, which causes the power drops. Various efforts have been made to reduce the operating temperature and compensate the power of solar cells according to the outdoor temperature such as installing of a cooling system. Researches have been also reported to lower the operating temperature of solar cells by improving the heat dissipation properties of the backsheet. In this study, we conducted a test to measure the internal temperature of each module components and the external temperature when the light was irradiated according to the surrounding temperature. Backsheets with different thermal conductivities were compared in the test. Finally, in order to explain the temperature difference between the solar cell and the outside of the module, we proposed an evaluation method of the heat transfer characteristics of photovoltaic modules with different backsheet.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2008년도 추계학술대회 초록집
• /
• pp.153-154
• /
• 2008

High velocity oxy-fuel (HVOF) thermal spraying coating has been used widely throughout the last 60 years mainly in defense, aerospace, and power plants. Recently this coating technique is considered as a promising candidate for the replacement of the traditional electrolytic hard chrome plating (EHC) which pollutes the environment and causes lung cancer by toxic hexa-valent $Cr^{6+}$. In this study, two kinds of cermet coatings, WC-CoCr and WC-CrC-Ni, are formed by HVOF spraying. The wear properties of coatings are evaluated comparatively by reciprocating sliding wear tests at $25^{\circ}C$, $250^{\circ}C$ and $450^{\circ}C$ respectively. Wear rates show that WC-CoCr coatings have better sliding wear resistance than WC-CrC-Ni coatings regardless of temperature due to more, compact and homogeneously distributed WC particles, less metal content, Co, Cr rich metallic bindermatrix with higher fracture strength and better adhesive strength with WC particles.

• 한국전기전자재료학회논문지
• /
• 제25권12호
• /
• pp.961-968
• /
• 2012

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

• E2M - 전기 전자와 첨단 소재
• /
• 제16권9호
• /
• pp.64.2-65
• /
• 2003

A 4 nm layer of ZrOx (targeted x-2) was deposited on an interfacial layer(IL) of native oxide (SiO, t∼1.2 nm) surface on 200 mm Si wafers by a manufacturable atomic layer chemical vapor deposition technique at 30$0^{\circ}C$. Some as-deposited layers were subjected to a post-deposition, rapid thermal annealing at $700^{\circ}C$ for 5 min in flowing oxygen at atmospheric pressure. The experimental x-ray diffraction, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and high-resolution parallel electron energy loss spectroscopy results showed that a multiphase and heterogeneous structure evolved, which we call the Zr-O/IL/Si stack. The as-deposited Zr-O layer was amorphous $ZrO_2$-rich Zr silicate containing about 15% by volume of embedded $ZrO_2$ nanocrystals, which transformed to a glass nanoceramic (with over 90% by volume of predominantly tetragonal-$ZrO_2$(t-$ZrO_2$) and monoclinic-$ZrO_2$(m-$ZrO_2$) nanocrystals) upon annealing. The formation of disordered amorphous regions within some of the nanocrystals, as well as crystalline regions with defects, probably gave rise to lattice strains and deformations. The interfacial layer (IL) was partitioned into an upper Si $o_2$-rich Zr silicate and the lower $SiO_{x}$. The latter was sub-toichiometric and the average oxidation state increased from Si0.86$^{＋}$ in $SiO_{0.43}$ (as-deposited) to Si1.32$^{＋}$ in $SiO_{0.66}$ (annealed). This high oxygen deficiency in $SiO_{x}$ indicative of the low mobility of oxidizing specie in the Zr-O layer. The stacks were characterized for their dielectric properties in the Pt/{Zr-O/IL}/Si metal oxide-semiconductor capacitor(MOSCAP) configuration. The measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of $ZrO_2$ and $SiO_2$, and the capacitance in accumulation (and therefore, EOT and kZr-O) was frequency dispersive, trends well documented in literature. This behavior is qualitatively explained in terms of the multi-layer nanostructure and nanochemistry that evolves.ves.ves.

• 한국전기전자재료학회논문지
• /
• 제15권2호
• /
• pp.190-197
• /
• 2002

In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.