• 제목/요약/키워드: Electronic and thermal properties

검색결과 1,077건 처리시간 0.028초

Effects of fission product doping on the structure, electronic structure, mechanical and thermodynamic properties of uranium monocarbide: A first-principles study

  • Ru-Ting Liang;Tao Bo;Wan-Qiu Yin;Chang-Ming Nie;Lei Zhang;Zhi-Fang Chai;Wei-Qun Shi
    • Nuclear Engineering and Technology
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    • 제55권7호
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    • pp.2556-2566
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    • 2023
  • A first-principle approach within the framework of density functional theory was employed to study the effect of vacancy defects and fission products (FPs) doping on the mechanical, electronic, and thermodynamic properties of uranium monocarbide (UC). Firstly, the calculated vacancy formation energies confirm that the C vacancy is more stable than the U vacancy. The solution energies indicate that FPs prefer to occupying in U site rather than in C site. Zr, Mo, Th, and Pu atoms tend to directly replace U atom and dissolve into the UC lattice. Besides, the results of the mechanical properties show that U vacancy reduces the compressive and deformation resistance of UC while C vacancy has little effect. The doping of all FPs except He has a repairing effect on the mechanical properties of U1-xC. In addition, significant modifications are observed in the phonon dispersion curves and partial phonon density of states (PhDOS) of UC1-x, ZrxU1-xC, MoxU1-xC, and RhxU1-xC, including narrow frequency gaps and overlapping phonon modes, which increase the phonon scattering and lead to deterioration of thermal expansion coefficient (αV) and heat capacity (Cp) of UC predicted by the quasi harmonic approximation (QHA) method.

MULTI-SCALE MODELS AND SIMULATIONS OF NUCLEAR FUELS

  • Stan, Marius
    • Nuclear Engineering and Technology
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    • 제41권1호
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    • pp.39-52
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    • 2009
  • Theory-based models and high performance simulations are briefly reviewed starting with atomistic methods, such as Electronic Structure calculations, Molecular Dynamics, and Monte Carlo, continuing with meso-scale methods, such as Dislocation Dynamics and Phase Field, and ending with continuum methods that include Finite Element and Finite Volume. Special attention is paid to relating thermo-mechanical and chemical properties of the fuel to reactor parameters. By inserting atomistic models of point defects into continuum thermo-chemical calculations, a model of oxygen diffusivity in $UO_{2+x}$ is developed and used to predict point defect concentrations, oxygen diffusivity, and fuel stoichiometry at various temperatures and oxygen pressures. The simulations of coupled heat transfer and species diffusion demonstrate that including the dependence of thermal conductivity and density on composition can lead to changes in the calculated centerline temperature and thermal expansion displacements that exceed 5%. A review of advanced nuclear fuel performance codes reveals that the many codes are too dedicated to specific fuel forms and make excessive use of empirical correlations in describing properties of materials. The paper ends with a review of international collaborations and a list of lessons learned that includes the importance of education in creating a large pool of experts to cover all necessary theoretical, experimental, and computational tasks.

Design and Preparation of High-Performance Bulk Thermoelectric Materials with Defect Structures

  • Lee, Kyu Hyoung;Kim, Sung Wng
    • 한국세라믹학회지
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    • 제54권2호
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    • pp.75-85
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    • 2017
  • Thermoelectric is a key technology for energy harvesting and solid-state cooling by direct thermal-to-electric energy conversion (or vice versa); however, the relatively low efficiency has limited thermoelectric systems to niche applications such as space power generation and small-scale or high-density cooling. To expand into larger scale power generation and cooling applications such as ATEG (automotive thermoelectric generators) and HVAC (heating, ventilation, and air conditioning), high-performance bulk thermoelectric materials and their low-cost processing are essential prerequisites. Recently, the performance of commercial thermoelectric materials including $Bi_2Te_3$-, PbTe-, skutterudite-, and half-Heusler-based compounds has been significantly improved through non-equilibrium processing technologies for defect engineering. This review summarizes material design approaches for the formation of multi-dimensional and multi-scale defect structures that can be used to manipulate both the electronic and thermal transport properties, and our recent progress in the synthesis of conventional thermoelectric materials with defect structures is described.

SiC가 코팅된 그라파이트 Foam의 제조 및 특성 분석 (Preparation and Characterization of SiC Coated Graphite Foam)

  • 경재진;김정주;김수룡;권우택;조광연;김영희
    • 한국세라믹학회지
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    • 제44권11호
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    • pp.622-626
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    • 2007
  • Graphite is widely used in electronic industry due to its excellent electrical and thermal properties. However, graphite starts to oxidize around $400^{\circ}C$ that seriously degrades its properties. SiC coating can be applied to graphite foam to improve its high temperature oxidation resistance. In this research, SiC coating on graphite foam was made via preceramic polymer using a polyphenylcarbosilane. 20% of polyphenylcarbosilane in hexane solution was coated onto graphite by dip coating method. Thermal oxidation was carried out at $200^{\circ}C$ for crosslink of the preceramic polymer and the sample were pyrolysized at $800^{\circ}C{\sim}1200^{\circ}C$ under nitrogen to convert the preceramic polymer to SiC film. The microstructure of the SiC coating after pyrolysis was investigated using FESEM and oxidation resistance up to $800^{\circ}C$ was evaluated.

수직형 지중열교환기 열전도도 측정기술에 관한 연구 (A Study on the Measurement of Thermal conductivity of Vertical Borehole heat Exchanger)

  • 김지영;이의준;장기창;강은철
    • 대한설비공학회:학술대회논문집
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    • 대한설비공학회 2008년도 동계학술발표대회 논문집
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    • pp.39-44
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    • 2008
  • The heat exchange between the Borehole Heat Exchanger(BHE) and the surrounding ground depends directly on ground thermal conductivity k at the certain site. The k is thus a key parameter in designing BHE and coupled geothermal heat pump systems. Currently, although a thermal hydraulic response test(TRT) is mostly used in practice, the thermal hydraulic TRT needs additional power and is generally time-consuming. A new, simple wireless P/T probe for a hi-speed k determination was introduced in this paper. This technique using a wireless P/T probe is less time-consuming and requires no external source of energy for measurement and predicts local thermal properties by measuring soil temperatures along the depth. Measured temperature data along the depth was analyzed. In order to verify the new technique for the determination of ground thermal conductivity, ground thermal conductivity k that calculated from the measured temperature data using a wireless P/T probe was compared with one obtained from conventional hydraulic TRT. When comparing the average k of two methods, the relative error was approximately 10%. As a result, the electronic TRT can replace the conventional hydraulic TRT method after carrying out the additional research on a lot of sites.

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Effect of Annealing Temperature on the Electrical Performance of SiZnSnO Thin Film Transistors Fabricated by Radio Frequency Magnetron Sputtering

  • Kim, Byoungkeun;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제18권1호
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    • pp.55-57
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    • 2017
  • Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

Application of Carbon Nanotubes in Displays

  • Feng, T.;Sun, Z.;Zhang, Z.J.;Lin, L.F.;Ding, Hui.;Chen, Y.W.;Pan, L.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1529-1531
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    • 2008
  • Since the discovery over a decade ago, carbon nanotubes (CNTs) have been attracting considerable attentions both from scientists and engineers. Because of the excellent field emission properties, such as high aspect ratio, extremely small diameter, and high emission current, CNTs become a potential candidate as field emitter for field emission display (FED) and lighting (FEL) as backlight for LCD. Due to the exceptional physical properties, such as superior thermal and electrical conductivities, as well as high stiffness and strength, the CNT-based composites can be as light-weight heat-sink or thermal spreader materials used for power electronic devices, such as power LED for general illumination. The CNTs for above applications will be reviewed, and related materials and devices will be demonstrated in this paper.

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산소 후열처리가 Ga2O3/4H-SiC 이종접합 다이오드의 온도에 따른 전기적 특성에 미치는 영향 분석 (Influence of Oxygen Annealing on Temperature Dependent Electrical Characteristics of Ga2O3/4H-SiC Heterojunction Diodes)

  • 정승환;이형진;이희재;변동욱;구상모
    • 반도체디스플레이기술학회지
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    • 제21권4호
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    • pp.138-143
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    • 2022
  • We analyzed the influence of post-annealing on Ga2O3/n-type 4H-SiC heterojunction diode. Gallium oxide (Ga2O3) thin films were deposited by radio frequency (RF) sputtering. Post-deposition annealing at 950℃ in an Oxygen atmosphere was performed. The material properties of Ga2O3 and the electrical properties of the diodes were investigated. Atomic Force Microscopy (AFM), X-Ray Diffraction and Scanning Electron Microscope (SEM) images show a significant increase in the roughness and crystallinity of the O2-annealed films. After Oxygen annealing X-ray Photoelectron Spectroscopy (XPS) shows that the atomic ratio of oxygen increases which is related to a decrease in oxygen vacancy within the Ga2O3 film. The O2-annealed diodes exhibited higher on-current and lower leakage current. Moreover, the ideality factor, barrier height, and thermal activation energy were derived from the current-voltage curve by increasing the temperature from 298 - 434K.

그래핀을 이용한 전자패키징 기술 연구 동향 (Trends of Researches and Technologies of Electronic Packaging Using Graphene)

  • 고용호;최경곤;김상우;유동열;방정환;김택수
    • 마이크로전자및패키징학회지
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    • 제23권2호
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    • pp.1-10
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    • 2016
  • This paper reports the trends of researches and technologies of electronic packaging using graphene. Electronic packaging is to provide the signal and electrical current among electronic components, to remove the heat in electronic systems or components, to protect and support the electronic components from external environment. As the required functions and performances of electronic systems or components increase, the electronic packaging has been intensively attracted attention. Therefore, technologies such as miniaturization, high density, Pb-free material, high reliability, heat dissipation and so on, are required in electronic packaging. Recently, graphene, which is a single two-dimensional layer of carbon atoms, has been extensively investigated because of its superior mechanical, electrical and thermal properties. Until now, many studies have been reported the applications using graphene such as flexible display, electrode, super capacitor, composite materials and so on. In this paper, we will introduce and discuss various studies on recent technologies of electronic packaging using graphene for solving the required issues.

저온소결 세라믹기판용 Cordierite계 결정화유리의 합성 및 특성조사에 관한 연구;(II) $CeO_2$를 첨가한 Cordierite계 결정화유리의 특성 (Synthesis and Characterization of Cordierite Glass-Ceramics for Low Firing Temperature Substrate; (II) Properties of Cordierite Glass-Ceramics Containing CeO2)

  • 이근헌;김병호;임대순;정재현
    • 한국세라믹학회지
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    • 제29권10호
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    • pp.827-835
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    • 1992
  • The effects of CeO2 on the properties of cordierite-based glass-ceramics and its applicability to low firing temperature substrate were examined. Glass-ceramics were prepared by sintering the glass powder compacts at 900~100$0^{\circ}C$ for 3 h. Density, bending strength, dielectric constant and thermal expansion coefficient of the glass-ceramics were measured as functions of CeO2 contents and sintering temperatures. By adding CeO2, dense glass-ceramics were obtained below 100$0^{\circ}C$. dielectric constant and bending strength were more dependent on the porosity of glass-ceramics containing 5 wt% CeO2, sintered at 100$0^{\circ}C$ for 3 h, were as follows; relative density is 95.3%, bending strength is 178$\pm$11 MPa, dielectric constant is 4.98$\pm$0.20 (at 1 MHz) and thermal expansion coefficient is 33.7$\times$10-7/$^{\circ}C$. Therefore, the glass-ceramics containing 5 wt% CeO2 appeared to be suitable for low firing temperature substrate of electronic devices.

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