• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1205-1211
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• 2004

This study has investigated radiation degradation of chloroprene rubber in the presence of some fire retardant. Ammonium polyphosphate, aluminium trihydroxide, magnesium hydroxide, calcium carbonate and antimony trioxide were selected as flame retardant. Samples were irradiated using a Co$^{60}$ ${\gamma}$ -ray and ray up to 2000 kGy at a dose rate of 5 kGy/hr in the presence of air atmosphere at room temperature. After irradiation, samples were assessed fire retardancy with electrical properties and mechanical properties. Some considerations concerning the effects of the fire retardants added to chloroprene rubber on the radiation and thermal stability of chloroprene rubber are presented. From fire retardancy with electrical and mechanical property measurements, it was found that addition of magnesium hydroxide resulted in maximum fire retardant effect.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.155-155
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• 2009

This paper introduces the findings of a detailed study on breakdown voltage strength under DC voltage and the development of HVDC cable. Recently, Nano-fillers are attracting attentions of many researchers and engineers, since they seem to bring higher potentials for advancement of electrical insulating properties as nano-composites. Additives and fillers are often adopted to polymeric materials for improving insulating and machanical properties. We have improved the polymer composition and developed a new insulation material for HVDC cable. Each specimen blended at LDPE1 to antioxidant, LDPE2 to antioxidant, pure XLPE was manufactured respectively. The insulation performances of the proposed insulator were compared with specimens blended at nano powders. DC breakdown strength of LDPE1 specimen at 90[$^{\circ}C$] was higher than other specimens. The experimental results show that polar groups intorduced in moleculars chains of blended specimen plays an important role in enhancement of thermal conductivity.

• 한국전기전자재료학회논문지
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• 제19권10호
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• pp.930-934
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• 2006

This paper reports a change of carbon nanotubes(CNTs) properties by post-treatment process after growth of CNTs. CNTs were treated by thermal method and solution method, and then investigated in detail using field emission scanning electron microscopy(FE-SEM), high resolution transmission scanning electron microscopy(HR-TEM), RAMAN spectroscopy, and Fourier Transform Infrared Spectrometer (FT-IR). FT-IR spectra showed that the amount of hydroxyl generated on surface of CNTs were changed with post-treatment condition. FE-SEM and TEM images were shown CNTs diameter and density variations were dependent with their treatment conditions. RAMAN spectroscopy was shown that carbon nanotubes structure vary with treatment conditions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.43-49
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• 2002

Gray-colored materials were synthesized from ball-milled ZnO powders under a thermal annealing at 1380$^{\circ}C$ with an argon carrier gas for 3 hours. The synthesized materials were identified to be wurtzitic hexagonal structured ZnO nanowires by X-ray diffraction and scanning electron microscopy. The ZnO nanowires have the long cylinder-like shape of which cross-section is a circle, and these nanowires are in the range 15∼40 nm width and 10-70 $\mu\textrm{m}$ length, respectively. Transmission electron microscopy revealed that these nanowires are single-crystalline and grow along [110] direction. The optical properties of the ZnO nanowires were investigated with photoluminescence. The analytic results revealed that ZnO nanowires have the singly ionized oxygen vacancies in the surface lattices, as they emit strong green light in room temperature PL. In addition, the growth mechanism of the ZnO nanowires can be described by the vapor-solid procedures.

• 한국전기전자재료학회논문지
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• 제15권8호
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• pp.651-657
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• 2002

Gray-colored materials were synthesized from ball-milled ZnO powders under a thermal annealing at $1380^{\circ}C$ with an argon carrier gas for 3 hours. The synthesized materials were identified to be wurtzitic hexagonal structured ZnO nanowires by X-ray diffraction and scanning electron microscopy. The ZnO nanowires have the long cylinder-like shape of which cross-section is a circle, and these nanowires are in the range 15~40nm width and 10~70 $\mu m$ length, respectively. Transmission electron microscopy revealed that these nanowires are single-crystalline and grow along ［110］ direction. The optical properties of the ZnO nanowires were investigated with photoluminescence. The analytic results revealed that ZnO nanowires have the singly ionized oxygen vacancies in the surface lattices, as they emit strong green light in room temperature PL. In addition, the growth mechanism of the ZnO nanowires can be described by the vapor-solid procedures.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.53-60
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• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.765-770
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• 2003

We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.

• Transactions on Electrical and Electronic Materials
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• 제15권6호
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• pp.344-347
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• 2014

This study was carried out on DLC thin film deposition technology used in infrared optical system production as a method of reducing the shape changes of the molding core and the consequent loss of life. Experiments on the deposition on silicon wafer and tungsten carbide used as a substrate for molding core were conducted at each processing condition using a filtered arc system, and it was found that the surface and mechanical properties were of the greatest quality when the substrate bias voltage of -150 V was used. In addition, it was confirmed that the PV and Ra characteristics were improved by the deposition of the DLC thin film.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.802-807
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• 2007

We have developed red phosphorescent top emission organic light-emitting diodes with transparent metal cathodes deposited by using thermal evaporation technique. Phosphorescent guest molecule, BtpIr(acac), was doped in host CBP for the red phosphorescent emission, Ca/Ag, Ba/Ag, and Mg/Ag double layers were used as cathode materials of top emission devices, which were composed of glass/Ni/2TNATA(15 nm)/${\alpha}$-NPD(35 nm)/CBP:BtpIr(acac)(40 nm, 10%)/BCP(5 nm)/$Alq_3$(5 nm)/cathodes. The optical transparencies of these metal cathodes strongly depend on underlying Ca, Ba, and Mg layers. These layers also strongly affect the electrical conduction and emission properties of the red phosphorescent top emission devices.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.59-62
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• 2017

CNT (carbon nanotube) resistors with low resistance and negative TCR (temperature coefficient of resistance) were fabricated with yarned CNT (carbon nanotube) fibers. The CNT fibers were prepared by yarning CNTs grown on the silicone substrate by CVD (chemical vapor deposition) method. The CNT resistors were fabricated by winding CNT fibers on the surface of ceramic rod. Both metal terminals were connected with the CNT fiber wound on the ceramic rod. We measured electrical resistance and thermal stability with the number of CNT fibers wound. The CNT resistor system shows linearly decreased resistance with the number of CNTs wound on the ceramic rod and saturated at 20 strands. The CNT resistor system has negative TCR between $-1,000{\sim}-2,000ppm/^{\circ}C$ and stable frequency properties under 100 kHz.