• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.04a
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• pp.43-55
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• 2000

In traditional electronic packages the die and the substrate are interconnected with fine wire. Wire bonding technology is limited to bond pads around the peripheral of the die. As the demand for I/O increases, there will be limitations with wire bonding technology. Flip chip technology eliminates the need for wire bonding by redistributing the bond pads over the entire surface of the die. Instead of wires, the die is attached to the substrate utilizing a direct solder connection. Although several steps and processes are eliminated when utilizing flip chip technology, there are several new problems that must be overcome. The main issue is the mismatch in the coefficient of thermal expansion (CTE) of the silicon die and the substrate. This mismatch will cause premature solder Joint failure. This issue can be compensated for by the use of an underfill material between the die and the substrate. Underfill helps to extend the working life of the device by providing environmental protection and structural integrity. Flux residues may interfere with the flow of underfill encapsulants causing gross solder voids and premature failure of the solder connection. Furthermore, flux residues may chemically react with the underfill polymer causing a change in its mechanical and thermal properties. As flip chip packages decrease in size, cleaning becomes more challenging. While package size continues to decrease, the total number of 1/0 continue to increase. As the I/O increases, the array density of the package increases and as the array density increases, the pitch decreases. If the pitch is decreasing, the standoff is also decreasing. This paper will present the keys to successful flip chip cleaning processes. Process parameters such as time, temperature, solvency, and impingement energy required for successful cleaning will be addressed. Flip chip packages will be cleaned and subjected to JEDEC level 3 testing, followed by accelerated stress testing. The devices will then be analyzed using acoustic microscopy and the results and conclusions reported.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.1
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• pp.41-45
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• 2018

As the size of semiconductor chip shrinks, the electronic industry has been paying close attention to fan-out wafer level packaging (FO-WLP) as an emerging solution to accommodate high input and output density. FO-WLP also has several advantages, such as thin thickness and good thermal resistance, compared to conventional packaging technologies. However, one major challenge in current FO-WLP manufacturing process is to control wafer warpage, caused by the difference of coefficient of thermal expansion and Young's modulus among the materials. Wafer warpage induces misalignment of chips and interconnects, which eventually reduces product quality and reliability in high volume manufacturing. In order to control wafer warpage, it is necessary to understand the effect of material properties and design parameters, such as chip size, chip to mold ratio, and carrier thickness, during packaging processes. This paper focuses on the effects of thickness of chip and molding compound on 12" wafer warpage after PMC of EMC using finite element analysis. As a result, the largest warpage was observed at specific thickness ratio of chip and EMC.

• Analytical Science and Technology
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• v.18 no.5
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• pp.410-418
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• 2005

PCBs had numerous uses such as hydraulic fluid, heat exchange fluid, sealant, lubricant, and carbonless copy paper. They are most likely found in electric utilities, power stations, industrial facilities, electronic manufacturing plants, petrochemical plants, railroad systems, electric equipment repair facilities, mining sites (active or abandoned), and military camps. Due to its outstanding chemical and thermal stabilities and electrical insulation properties, the commercial and industrial products of PCBs, such as Aroclors, Kaneclors, Clophens, Phenaclors etc., had been widely used as thermal oil and transformer oil from 1930s until the 1970s. The transformer oils were analyzed as a main source of polychlorinated biphenyls (PCBs) emission into the environment. Qualitative estimation of oil extracts as carried out with Aroclor 1242, 1248, 1254, 1260. The transformer oils contained the pure and mixed of Aroclor 1242, Aroclor 1254, and Aroclor 1260. Also, commercial screening kit of 20 ppm and 50 ppm were applied to the transformer oil samples.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.498-502
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• 2010

Aluminium titanate($Al_2TiO_5$) has extremely anisotropic thermal expansion properties in single crystals, and polycrystalline material spontaneously microcracks in the cooling step after sintering process. These fine intergranular cracks limit the strength of the material, but provide an effective mechanism for absorbing strain energy during thermal shock and preventing catastrophic crack propagation. Furthermore, since machinable BN-ceramics used as an insulating substrate in current micro-electronic industry are very expensive, the development of new low-cost machinable substrate ceramics are consistently required. Therefore, cheap $Al_2TiO_5$-machinable ceramics was studied for the replacement of BN ceramics. $Al_2O_3-Al_2TiO_5$ ceramic composite was fabricated via in-situ reaction sintering. $Al_2O_3$ and $TiO_2$ powders were mixed with various mol-ratio and sintered at 1400 to $1600^{\circ}C$ for 1 h. Density, hardness and strength of sintered ceramics were systematically measured. Phase analysis and microstructures were observed by XRD and SEM, respectively. Machinability of each specimens was tested by micro-hole machining. The results of research showed that the $Al_2TiO_5$-composites could be used for low-cost machinable ceramics.

• Advances in materials Research
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• v.13 no.3
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• pp.221-232
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• 2024

Waste tire management and recycling have grown to be significant issues because they bring up a global environmental concern. Thus, turning recycled waste tires into useful products may help tackle the environmental issue. This research aims to study and compare the effect of recycled carbon black (rCB) and commercial carbon black (CB) at certain 15 vol. % of filler loading on the mechanical, thermal, morphology and electrical properties of epoxy/CB composites. For this project, epoxy resin, diethyltoluenediamine (DETDA), recovered carbon black (rCB) and commercial carbon black (CB) graded N330, N550, N660 and N774 were mixed and compared accordingly to the formulation determined. The CB content was dispersed in the epoxy matrix using the mechanical mixing technique. The distribution and dispersion of CB in the epoxy matrix affect the characteristics of the conductive composites. rCB content at 15 vol% was selected at fixed content for comparison purposes due to the optimum value in electrical conductivity results. The flexural strength results followed the sequence of rCB>N774>N660>N550>N330. As for electrical conductivity results, epoxy/N330 exhibited the highest conductivity value, while the others achieved a magnitude of X10^-3 due to the highest external surface area of N330. In terms of thermal stability, epoxy/N330 and epoxy/N774 were slightly more stable than epoxy/rCB.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.468-475
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• 2011

[ $LaMeO_3$ ](Me = Cr, Co) powders were prepared using the polymeric precursor method. The effects of the chelating agent and the polymeric additive on the synthesis of the $LaMeO_3$ perovskite were studied. The samples were synthesized using ethylene glycol (EG) as the solvent, acetyl acetone (AcAc) as the chelating agent, and polyvinylpyrrolidone (PVP) as the polymer additive. The thermal decomposition behavior of the precursor powder was characterized using a thermal analysis (TG-DTA). The crystallization and particle sizes of the $LaMeO_3$ powders were investigated via powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and particle size analyzer, respectively. The as-prepared precursor primarily has $LaMeO_3$ at the optimum condition, i.e. for a molar ratio of both metal-source (a : a) : EG (80a : 80a) : AcAc (8a) inclusive of 1 wt% PVP. When the as-prepared precursor was calcined at $700^{\circ}C$, only a single phase was observed to correspond with the orthorhombic structure of $LaCrO_3$ and the rhombohedral structure of $LaCoO_3$. A solid-electrolyte impedance-metric sensor device composed of $Li_{1.5}Al_{0.5}Ti_{1.5}(PO_4)_3$ as a transducer and $LaMeO_3$ as a receptor has been systematically investigated for the detection of NOx in the range of 20 to 250 ppm at $400^{\circ}C$. The sensor responses were able to divide the component between resistance and capacitance. The impedance-metric sensor for the NO showed higher sensitivity compared with $NO_2$. The responses of the impedance-metric sensor device showed dependence on each value of the NOx concentration.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.775-780
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• 1995

Thin films of titanium nitride are formed using the tetrakis-dimethyl-amino-titanium (TDMAT(Ti[N($CH_3$)$_2$]$_4$)) under various conditions. The formation of TiN films has been obtained from the thermal decomposition of the Ti-precursor and the gas phase reaction between TDMAT and ammonia(NH$_3$). The resistivity of the MOCVD film can be attributed to their impurity. Especially the curve fitting graph of XPS data is revealed that main impurities in the films as carbon and oxygen make various interstitial compounds which has influenced physical and electrical properties of the film. In the contact hole with the aspect ratio of 3:1 and the diameter of 0.5${\mu}{\textrm}{m}$, the SEM morphology shows that the step coverage is more decreased in the films formed y flowing ammonia additionally than the films formed by pyrolysis of TDMAT and the phenomenon is probably related with the activation energy.

• Progress in Superconductivity and Cryogenics
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• v.23 no.4
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• pp.19-24
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• 2021

The low normal zone propagation velocity (NZPV) of high-temperature superconducting (HTS) tape leads to a quench protection problem in HTS magnet applications. To overcome this limitation, various studies were conducted on HTS coils without turn-to-turn insulation (NI coils) that can achieve self-protection. On the other hand, NI coils have some disadvantages such as slow charging and discharging time. Previously, the HTS coils with turn-to-turn insulation (INS coils) were operated in power supply (PS) driven mode, which requires physical contact with the external PS at room-temperature, not in persistent current mode. When a quench occurs in INS coils, the low NZPV delays quench detection and protection, thereby damaging the coils. However, the rotary HTS flux pump supplies the DC voltage to the superconducting circuit with INS coils in a non-contact manner, which causes the INS coils to operate in a persistent current mode, while enabling quench protection. In this paper, a new protection characteristic of HTS coils is investigated with INS coils charging through the rotary HTS flux pump. To experimentally verify the quench protection characteristic of the INS coil, we investigated the current magnitude of the superconducting circuit through a quench, which was intentionally generated by thermal disturbances in the INS coil under charging or steady state. Our results confirmed the protection characteristic of INS coils using a rotary HTS flux pump.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.3
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• pp.29-34
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• 2019

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its large energy band gap and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, electric conductivity of porous n-type SiC semiconductors fabricated from ${\beta}-SiC$ powder at $2000^{\circ}C$ in $N_2$ atmosphere was comparable to or even larger than the reported values of SiC single crystals in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$, while thermal conductivity was kept as low as 1/10 to 1/30 of that for a dense SiC ceramics. In this work, for the purpose of decreasing sintering temperature, it was attempted to fabricate porous reaction-sintered bodies at low temperatures ($1400-1600^{\circ}C$) by thermal decomposition of polycarbosilane (PCS) impregnated in n-type ${\beta}-SiC$ powder. The repetition of the impregnation and sintering process ($N_2$ atmosphere, $1600^{\circ}C$, 3h) resulted in only a slight increase in the relative density but in a great improvement in the Seebeck coefficient and electrical conductivity. However the power factor which reflects the thermoelectric conversion efficiency of the present work is 1 to 2 orders of magnitude lower than that of the porous SiC semiconductors fabricated by conventional sintering at high temperature, it can be stated that thermoelectric properties of SiC semiconductors fabricated by the present reaction-sintering process could be further improved by precise control of microstructure and carrier density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.412-412
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• 2009

Carbon-based nano materials have a significant effect on various fields such as physics, chemistry and material science. Therefore carbon nano materials have been investigated by many scientists and engineers. Especially, since graphene, 2-dimemsonal carbon nanostructure, was experimentally discovered graphene has been tremendously attracted by both theoretical and experimental groups due to their extraordinary electrical, chemical and mechanical properties. Electrical conductivity of graphene is about ten times to that of silicon-based material and independent of temperature. At the same time silicon-based semiconductors encountered to limitation in size reduction, graphene is a strong candidate substituting for silicon-based semiconductor. But there are many limitations on fabricating large-scale graphene sheets (GS) without any defect and controlling chirality of edges. Many scientists applied micromechanical cleavage method from graphite and a SiC decomposition method to the fabrication of GS. However these methods are on the basic stage and have many drawbacks. Thereupon, our group fabricated GS through Thermo-electrical Pulse Induced Evaporation (TPIE) motivated by arc-discharge and field ion microscopy. This method is based on interaction of electrical pulse evaporation and thermal evaporation and is useful to produce not only graphene but also various carbon-based nanostructures with feeble pulse and at low temperature. On fabricating GS procedure, we could recognize distinguishable conditions (electrical pulse, temperature, etc.) to form a variety of carbon nanostructures. In this presentation, we will show the structural properties of OS by synthesized TPIE. Transmission Electron Microscopy (TEM) and Optical Microscopy (OM) observations were performed to view structural characteristics such as crystallinity. Moreover, we confirmed number of layers of GS by Atomic Force Microscopy (AFM) and Raman spectroscopy. Also, we used a probe station, in order to measure the electrical properties such as sheet resistance, resistivity, mobility of OS. We believe our method (TPIE) is a powerful bottom-up approach to synthesize and modify carbon-based nanostructures.