1 |
Y. Suga(Ed.), Thermoelectric Semiconductors, p. 295-355, MakiShyoten, 1966.
|
2 |
D. M. Rowe and C. M. Bjandari, Modern Thermoelectrics, p. 35-48, Holt, Rinehart and Winston Ltd., 1983.
|
3 |
I. B. Cadoff and E. Miller, Thermoelectric Materials and Devices, p. 178-183, Chapman and Hall Ltd., 1960. DOI: https://dx.doi.org/10.1063/1.3057558
|
4 |
K. Uemura and I. Nishida, Thermoelectric Semiconductors and Their Applications, p. 1-11, Nikkan Kogyo Shinbun, 1988.
|
5 |
K. Koumoto, C. H. Pai, S. Takeda, and H. Yanagida, "Microstructure-controlled Porous SiC Ceramics for High-temperature Thermoelectric Energy Conversion", Proc. of the 8th Inter. Conf. on Thermoelectric Energy Conversion (Nancy), pp. 107-112, 1989.
|
6 |
C. H. Pai, Y. Sasaki, K. Koumoto, and H. Yanagida, "Reaction Sintering of Polycarbosilane-Impregnated Compact of Silicon Carbide Hollow Particles and the Resultant Thermoelectric Properties", J. Am. Ceram. Soc., 74[11], pp. 2922-2924, 1991. DOI: https://doi.org/10.1111/j.1151-2916.1991.tb06864.x
DOI
|
7 |
J. E. Parrott, "Some Contributions to the Theory of Electrical Conductivity, Thermal Conductivity, and Thermoelectric Power in Semiconductors", Proc. Phys. Soc., pp. 590-607, 1957.
|
8 |
W. S. SEO, C. H. Pai, K. Koumoto, and H. Yanagida, "Microstructure Development and Stacking Fault Annihilation in -SiC Powder Compact", J. Ceram. Soc. Jpn., 99[6], pp. 443-447, 1991. DOI: https://dx.doi.org/10.2109/jcersj.99.443
DOI
|
9 |
J. Y. W. Seto, "The Electrical Properties of Polycrystalline Silicon Films," J. Appl. Phys., 46[12], pp.5247-5254, 1975. DOI: https://dx.doi.org/10.1063/1.321593
DOI
|
10 |
C. H. Seager and T. G. Castner, "Zero-bias Resistance of Grain Boundaries in Neutron-transmutation-doped Polycrystalline," J. Appl. Phys., 49[7], pp. 3879-3889, 1978. DOI: https://dx.doi.org/10.1063/1.325394
DOI
|
11 |
M. L. Tarng, "Carrier Transport in Oxygen-rich Polycrystalline Silicon Films," J. Appl. Phys., 49[7], pp. 4069-4076, 1978. DOI: https://dx.doi.org/10.1063/1.325367
DOI
|
12 |
G. Baccarani, B. Ricco, and G. Spadini, "Transport Properties of Polycrystalline Silicon Films," J. Appl. Phys., 49[11], pp. 5565-5570, 1978. DOI: https://dx.doi.org/10.1063/1.324477
DOI
|
13 |
J. Y. M. Lee and I. C. Cheng, "Electrical Properties of Lightly Doped Polycrystalline Silicon," J. Appl. Phys., 53[1], pp. 490-495, 1980. DOI: https://dx.doi.org/10.1063/1.329952
DOI
|