• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.803-806
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• 2011

1 mol% $Li_2O$ excess $0.9(Na_{0.52}K_{0.48})NbO_3-0.1LiTaO_3$ lead-free piezoelectric multilayer ceramic actuators were investigated to determine their aging properties. To reduce the thermal aging behavior, we applied a rectified unipolar electric field of 5 kV/mm to the specimen to accelerate the electric aging behavior. By employing a rectified unipolar electric field for the piezoelectric actuators, we could remove undesirable heating from the relaxation current in the motion of the ferroelectric domain. To accelerate the aging test, the applied electric fields had a frequency of 900 Hz. To have enough time for charging and discharging, we employed an accurate time constant to design the equivalent circuit model for the aging tester. To extract exact aging behavior, we measured the pseudo-piezoelectric coefficient before and after the aging process. We also measured the electro-mechanical coupling coefficient, the frequency-dependent dielectric permittivity, and the impedance to compare with fresh and aged specimen.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.3
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• pp.43-55
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• 2003

As the development of If industries and their electronic device manufacturing technology have been accelerated recently, the request for electronic devices with small size, light weight, and high performance has been inducing that electronic package and substrate (PCB) companies have to develop substrates with low cost, high dense I/O, excellent thermal properties and electrical properties. Therefore, world-wide chip makers have been setting their own severe reliability standards and requiring their suppliers to keep specification and to develop green, high frequency and high-performing substrates. Because properties of substrates are dependent mainly on their constituent materials, the application of them showing superior properties is expected to satisfy the customer's requirement. Therefore, substrate companies should ensure the superiority of materials and assure their competitive capability of substrates by analyzing the latest trends of technology and properties of the materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.33-36
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• 2005

Colloidal Silica(CS)/silane sol solutions were prepared in variation with synthesizing parameters such as ratio of CS to silane and reaction time. In the case of LHSA CS/tetramethoxysilane(TMOS)/methyltrimethoxysilane(MTMS) CS/silane sol, coating film had stable contact angle with increasing reaction time excepting for 48hours. Also, the LHSA CS/TMOS/MTMS coating film had more enhanced flat surface with increasing the amount of MTMS and increasing reaction time. In the case of thermal stability, thermal dissociation of LHSA CS/MTMS sol did not occur up to $550^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.835-840
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• 2016

In this study, the electrostatic capacity and dielectric loss tangent for $20{\mu}m$ thick thermal conductivity silicone rubber which is heated at 80 degrees for 8 hours has been measured at temperature of $30^{\circ}C{\sim}170^{\circ}C$, frequency of 0.1~1 MHz. The results of degradation evaluation by this study are as follows. In low frequency, it found that the electrostatic capacity decreased with increasing temperature. On the other hand, it confirmed that the range of the electrostatic capacity narrowed with increasing frequency. It confirmed that there are the carboxylic acid structure and C-O bonding at range of wave number 1,000cm-1 to 1,300cm-1.

• Journal of Acupuncture Research
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• v.29 no.6
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• pp.1-10
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• 2012

Objectives : The aim of this review was to summarize and assess researches reporting thermal properties of moxibustion. Methods and Materials : We searched one electronic database(PubMed) and two journals(The Journal of Korean Medicine and The Journal of Korean Acupuncture & Moxibustion Society) and for the articles published until Nov. 2012. The articles reporting thermal characteristic of moxibustion were selected and reviewed. 31 articles were included and assessed in this review. The type of moxibustion, the material beneath moxbustion, main outcome and the amount of information were reviewed. The amount of information was defined as 1 for one main outcome reported in each article. Results : Direct moxibustion were used in 15 articles and indirect moxibustion were used in 19 articles. 11 researches used anti-heating plate for the material beneath moxibustion, one article used steel ring, agar with anti-heating plate, six articles used skin and another six articles used heater. Two articles used animals and another two articles used metals. The mean value of the amount of information was $4.41{\pm}2.94$(SD). Conclusions : Research articles assessing properties of moxibustion have been consistently published since 1993, and employed various methodologies. The amount of information has been associated with four section analysis and is currently decreasing. Research assessing properties of moxibustion with clinical effectiveness is needed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.57-59
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTi03 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.287-288
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• 2008

에폭시-층상실리케이트 나노콤포지트의 균질분산과 층상실리케이트내로 침투되는 박리정도를 향상시키기 위해 친환경적 분산기법인 물리적방법으로 Homogenizer와 Power Ultrasonic를 적용한 기법을 실시하였다. Homogenizer의 최적속도를 얻기 위해 분산시킨 나노콤포지트의 박리정도, 유리천이온도를 구할 수 있었고, Homogenizer와 Ultrasonic을 동시에 적용하여 최적시간을 구하기 위해 적용된 나노콤포지트를 절연파괴 강도의 Weibull Plots을 통하여 판단할 수 있는 좋은 결과를 얻을 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.133-138
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• 2017

We evaluated the structural, electrical and optical properties of tungsten (W)-doped $Ge_8Sb_2Te_{11}$ thin films. In a previous work, GeSbTe alloys were doped with different materials in an attempt to improve thermal stability. 200 mm thick $Ge_8Sb_2Te_{11}$ and W-doped $Ge_8Sb_2Te_{11}$ films were deposited on p-type Si (100) and glass substrates using a magnetron co-sputtering system at room temperature. The fabricated films were annealed in a furnace in the $0{\sim}400^{\circ}C$ temperature range. The structural properties were analyzed using X-ray diffraction (X'pert PRO, Phillips). The results showed increased crystallization temperature ($T_c$) leading to thermal stability in the amorphous state. The optical properties were analyzed using an UV-Vis-IR spectrophotometer (Shimadzu, U-3501, range : 300~3,000 nm). The results showed an increase in the crystalline material optical energy band gap ($E_{op}$) and an increase in the $E_{op}$ difference (${\Delta}E_{op}$). This is a good effect to reduce memory device noise. The electrical properties were analyzed using a 4-point probe (CNT-series). This showed increased sheet resistance ($R_s$), which reduces programming current in the memory device.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.49-56
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• 2012

Recently, by the trends of electronic package to be smaller, thinner and more integrative, fine bump is required. but It can result in the electrical short by reduced cross-section of UBM and diameter of bump. Especially, the formation of IMCs and KV can have a significant affects about electrical and mechanical properties. In this paper, we analyzed the thermal deformation of flip-chip bump by using FEM. Through Thermal Cycling Test (TCT) of flip-chip package, We analyzed the properties of the thermal deformation. and We confirmed that the thermal deformation of the bump can have a significant impact on the driving system. So we selected IMCs thickness and bump diameter as variable which is expected to have implications for characteristics of thermal deformation. and we performed analysis of temperature, thermal stress and thermal deformation. Then we investigated the cause of the IMC's effects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.297-298
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• 2009

대부분의 반도체 소자의 고장 원인은 85%정도가 열로 인한 것이며, 고출력 LED는 인가된 에너지의 20%정도의 광으로 출력되며 나머지 80%가 열로 전환된다. 본 논문에서는 PMS-50과 KEITHLEY 2430을 이용하여 PCB 구조와 Via hole 구성에 따른 LED 패키지의 열적 광학적 특성을 분석하였다. 0.6mm의 Via hole을 가진 FR4 PCB의 열특성이 가장 우수하였으며, Via hole 0.6mm FR4 PCB의 경우 McPCB에 상응하는 광출력 특성을 보였다.