• 대한전자공학회논문지
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• 제20권6호
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• pp.81-87
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• 1983

심전도는 심장근육세포와 홍분세포들의 활동전위의 전파에 따른 전파에 의해 발생한다. 활동전위의 재분극상은 임상적 요인에 매우 민감하다. 따라서. 역심전도에 관한 본 논문에서는, 디지탈 신호 추정방법으로 심전도의 재분극상에서의 일정활동전위(uniform action potential)를 추정하는 방법을 연구하였다. 추정된 정상인의 활동전위는 임상적 자료와 비슷한 재분극상을 보였다.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.127-137
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• 2004

We have investigated the structures, the energetic, and the nanomechanics of the single-wall boron-, aluminum-, and gallium-nitride nanotubes using atomistic simulations based on the Tersoff-type potential. The Tersoff-type potential for the III-nitride materials has effectively described the properties of the III-nitride nanotubes. Nanomechanics of boron-, aluminum-, and gallium-nitride nanotubes under the compression loading has been investigated and their Young's moduli were calculated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.426-429
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• 1999

In this paper, we have provided the measurement technique of the grounding mesh resistance by field measurements. The standard of measurement is specified in the IEEE Std 81.2-1991 and JEAC 5001-1988, which is the the fall-of-potential method by test-current injection, but this method is difficult to apply at field, where is small around a electric power substation of domestic. For the convenient measurement method, space of assistant probe and quantity of test-current injection are changed step for step. As the result, ' the proposed measurement technique of grounding mesh resistance is that the space of current and potential probes must be fixed at 150rn from a grounding mesh, the test-current injection has to keep 5A or more.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.431-436
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM respectively.

• 한국전기전자재료학회논문지
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• 제35권4호
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• pp.353-358
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• 2022

Bulky iron-core potential transformers (PT) are installed in a tank of gas insulated switchgears (GIS) for a system voltage measurement in power substations. In this paper, we studied an electronic voltage transformer (EVT) embedded in a spacer for miniaturization, eco-friendliness, and performance improvement of GIS. The prototype EVT consists of a capacitive probe (CP) that can be embedded in a spacer and a voltage Follower with a high input and a low output impedance. The CP was fabricated in the form of a Flexible-PCB to acquire the insulation performance and to withstand vibration and shock during operation. Voltage ratio of the prototype EVT is about 42,270, and the frequency bandwidth of -3 dB ranges from 0.33 Hz to 3.9 MHz. The voltage ratio error evaluated at about 6%, 12% and 18% of the rated voltage of 170 kV was 0.32%, and the phase error was 12.9 minutes. These results were within the accuracy for the class 0.5 specified in IEC 60044-7 and satisfy even in ranges from 80% to 120% of the rated voltage. If the prototype EVT replaces the conventional iron-core potential transformer, it is expected that the height of the GIS could be reduced by 11% and the amount of SF₆ will be reduced by at least 10%.

• 한국음향학회:학술대회논문집
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• 한국음향학회 2000년도 하계학술발표대회 논문집 제19권 1호
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• pp.385-388
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• 2000

Electromagnet ic wave falling on solid surface acts on the medium with a force. This force brings about a redistribution of surface charges and the surface potential is varied. By measuring this potential variations, the surface electrical properties on conductors, semicionductors and dielectrics can be tested. In this paper, two dimensional photocharge voltage on the $LiNbO_3$ wafer induced by He-Ne laser beam, the temperature characteristics and the capacitive coupling test structure for the photocharge voltage measurement for the dielectrical materials are shown.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.569-573
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• 2012

We investigated the speed change of the diamond spherical abrasive during the substrate surface polishing under the pad compression by using classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. As the compressive pressure increased, the indented depth of the diamond abrasive increased and then, the speed of the diamond abrasive along the direction of the pad moving was decreased. Molecular simulation result such as the abrasive speed decreasing due to the pad pressure increasing gave important information for the chemical mechanical polishing including the mechanical removal rate with both the pad speed and the pad compressive pressure.

• Bulletin of the Korean Chemical Society
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• 제34권1호
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• pp.179-187
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• 2013

We describe newly developed software named KPACK for relativistic electronic structure computation of molecules containing heavy elements that enables the two-component ab initio calculations in Kramers restricted and unrestricted formalisms in the framework of the relativistic effective core potential (RECP). The spin-orbit coupling as relativistic effect enters into the calculation at the Hartree-Fock (HF) stage and hence, is treated in a variational manner to generate two-component molecular spinors as one-electron wavefunctions for use in the correlated methods. As correlated methods, KPACK currently provides the two-component second-order M${\o}$ller-Plesset perturbation theory (MP2), configuration interaction (CI) and complete-active-space self-consistent field (CASSCF) methods. Test calculations were performed for the ground states of group-14 elements, for which the spin-orbit coupling greatly influences the determination of term symbols. A categorization of three procedures is suggested for the two-component methods on the basis of spin-orbit coupling manifested in the HF level.

• Advances in nano research
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• 제1권3호
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• pp.171-182
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• 2013

The alternating current (AC) conductivity in semiconductor crystals with an open-core screw dislocation is studied in the current work. The screw dislocation in crystalline media results in an effective potential field which affects the electronic transport properties of the system. Therefore, from a technological view point, it is interesting to investigate properties of AC conductivity at frequencies of a few terahertz. To quantify the screw-induced potential effect, we calculated the AC conductivity of dislocated crystals using the Kubo formula. The conductivity showed peaks within the terahertz frequency region, where the amplitude of the AC conductivity was large enough to be measured in experiments. The measurable conductivity peaks did not arise in dislocation-free crystals threaded by a magnetic flux tube. These results imply different conductivity mechanisms in crystals with a screw dislocation than those threaded by a magnetic flux tube, despite the apparent similarity in their electronic eigenstates.

• Journal of Magnetics
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• 제12권2호
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• pp.59-63
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• 2007

Ferromagnet/Semiconductor heterostructures have attracted much attention because of their potential applications in spintronic devices. We investigated the electronic structures and magnetism of monolayer Fe on $CuGaSe_2(001)$ by using the all-electron full-potential linearized augmented plane-wave method within a generalized gradient approximation. We considered the monolayer Fe deposited on both the CuGa atoms terminated (CuGa-Term) and the Se atom terminated (Se-Term) surfaces of $CuGaSe_2(001)$. The calculated magnetic moment of the Fe atom on the CuGa-Term was about $2.90\;{{\mu}_B}$. Those of the Fe atoms on the Se-Term were in the range of $2.85-2.98\;{{\mu}_B}$. The different magnetic behaviors of the Fe atoms on two different surfaces were discussed using the calculated layer-projected density of states.