[KSCI] Korea Science Citation Index Service

http://dx.doi.org/10.4313/JKEM.2004.17.2.127

Atomistic Study of III-Nitride Nanotubes

변기량 (중앙대학교 전기전자공학부)
강정원 (중앙대학교 전기전자공학부)
이준하 (상명대학교 컴퓨터 정보통신공학부)
권오근 (세명대학교 인터넷 정보학부)
황호정 (중앙대학교 전기전자공학부)

Publication Information

Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.2, 2004 , pp. 127-137 More about this Journal

Abstract

We have investigated the structures, the energetic, and the nanomechanics of the single-wall boron-, aluminum-, and gallium-nitride nanotubes using atomistic simulations based on the Tersoff-type potential. The Tersoff-type potential for the III-nitride materials has effectively described the properties of the III-nitride nanotubes. Nanomechanics of boron-, aluminum-, and gallium-nitride nanotubes under the compression loading has been investigated and their Young's moduli were calculated.

Keywords

Single-wall boron-; aluminum-; and gallium-nitride nanotubes; Atomistic simulations; Tersoff-type potential;

Citations & Related Records

Times Cited By KSCI : 3 (Citation Analysis)

Reference
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KSCI

Atomistic Study of III-Nitride Nanotubes 3족-질화물 나노튜브의 원자단위 연구

Atomistic Study of III-Nitride Nanotubes