Photocharge Voltage Measurement on the $LiNbO_3$ Wafers by Using the Laser Beam

레이저빔을 이용한 $LiNbO_3$ 웨이퍼의 광-전하 전압 측정

  • Park Jong-Duck (Division of Electrical an Electronic Engineering Kyungnam Univ.) ;
  • Joo Chang-Bok (Division of Electrical an Electronic Engineering Kyungnam Univ.) ;
  • Park Nam-Chun (Division of Electrical an Electronic Engineering Kyungnam Univ.)
  • 박종덕 (경남대학교 전기전자공학부) ;
  • 주창복 (경남대학교 전기전자공학부) ;
  • 박남천 (경남대학교 전기전자공학부)
  • Published : 2000.07.07

Abstract

Electromagnet ic wave falling on solid surface acts on the medium with a force. This force brings about a redistribution of surface charges and the surface potential is varied. By measuring this potential variations, the surface electrical properties on conductors, semicionductors and dielectrics can be tested. In this paper, two dimensional photocharge voltage on the $LiNbO_3$ wafer induced by He-Ne laser beam, the temperature characteristics and the capacitive coupling test structure for the photocharge voltage measurement for the dielectrical materials are shown.

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