• Title/Summary/Keyword: Electronic Potential

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Assessment of Legal Instruments and Applicability to the Use of Electronic Bills of Lading

  • Lee, Un-Ho
    • Journal of Korea Trade
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    • v.24 no.2
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    • pp.31-52
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    • 2020
  • Purpose - This study mainly investigates two potential legal regimes expected to govern the use of electronic bills of lading: the Rotterdam Rules (2009) and the UNCITRAL Model Law on Electronic Transferable Records (2017). Widespread use of electronic bills of lading has been unsuccessful partly due to the absence of a uniform legal regime and protracted uncertainties. This paper aims to carry out an assessment of the possibilities where either of two potential legal regimes could provide certainty to the effect and validity of the use of electronic bills of lading, and contribute to the facilitation of electronically transferring the rights to goods carried by sea. Design/methodology - This paper first introduces two legal instruments and the relevance to electronic bills of lading. Since neither of these legal instruments has yet entered into force, the following section looks into the ratification or enactment possibilities based on a literature review and track records of the past legal regimes of the same kind. Assessment of the different adoption possibilities further requires comparative work of the two legal instruments, which will be based on an analysis of relevant provisions and a literature review. The literature review on the Rotterdam Rules delves into various studies and data produced since the UNCITRAL's adoption in 2009. The literature review on the UNCITRAL Model Law on Electronic Transferable Records heavily relies on UNCITRAL working group documents from 2011 to 2017 together with the final explanatory note. Findings - The main findings can be summarized as follows. Application of the Rotterdam Rules would negate the role of the UNCITRAL Model Law on Electronic Transferable Records assisting in the implementation of the Rotterdam Rules due to some conflicting issues. Enactment of the UNCITRAL Model Law alone can sufficiently provide a higher level of certainty in the use and effect of electronic bills of lading so long as lawmakers and parties are aware of some issues with the application. What concerns potential users most is the extension of the status quo, where neither of the legal instruments have any effect. It is necessary to take a number of alternatives into consideration, such as promotion of standard clauses and confirmation by a court ruling. Originality/value - Existing studies focus either on the Rotterdam Rules or on the UNCITRAL Model Law, but not both. Not many papers have yet dealt with the Model Law, which was adopted by UNCITRAL only 2 years ago, particularly in the context of a potential legal regime for electronic bills of lading. This paper attempts to introduce the differences between the two legal instruments in regulating the use of electronic bills of lading while providing an assessment of the various possibilities for which parties involved in international trade can be better prepared for the changing legal environment.

Polymer Encapsulation of $TiO_2$ Nanoparticle for Electronic Paper Device (Electronic Paper Device 적용을 위한 $TiO_2$ 나노입자의 폴리머 Encapsulation)

  • Kwon, S.H.;Kim, S.K.;Hong, W.S.;Ahn, J.H.;Kim, S.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.991-994
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    • 2003
  • Electronic Paper용 무기소재로 $TiO_2$ 나노입자를 적용하기 위해서는 분산시 침전문제, 입자의 전기영동 속도향상을 위한 충분한 $\xi-potential$확보, 분산제 첨가시 안정적 결합을 위한 acidic site의 확보등의 문제가 해결되어야 한다. 이를 위해 저온균일침전법으로 $TiO_2$ 나노입자를 제조하였고, 폴리머 체인을 통하여 encapsulation하여 최적의 분산과 전기영동조건 확보를 위한 공정조건에 대해 연구하였다. 실험결과 다양한 분산매에 계면활성제를 1.0wt% 첨가시 유전율상수가 2.5인 분산매에서 가장 좋은 $\xi-potential$을 얻을 수 있었으며 이를 바탕으로 acidic site에 따른 폴리머 체인의 흡착실험 결과 pH $1{\sim}2$의 조건에서 제조된 $TiO_2$ 나노입자의 경우가 체인과의 흡착정도가 가장 좋아 분산특성을 향상시킬 수 있었다.

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Analysis of Subthreshold Swing for Double Gate MOSFET Using Gaussian Function (가우스함수를 이용한 DGMOSFET의 문턱전압이하 스윙분석)

  • Jung, Hak-Kee;Han, Ji-Hyung;Lee, Jae-Hyung;Jeong, Dong-Soo;Lee, Jong-In;Kwon, Oh-Shin
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.05a
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    • pp.681-684
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    • 2011
  • In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The subthreshold swing has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the subthreshold swings have been analyzed according to the shape of Gaussian function.

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Study on Micro Dried Bio-potential Electrodes Using Conductive Epoxy on Textile Fabrics (전도성 에폭시를 이용한 직물 위에 구현된 건식 생체전위 전극의 연구)

  • Cha, Doo-Yeol;Jung, Jung-Mo;Kim, Deok-Su;Yang, Hee-Jun;Choi, Kyo-Sang;Choi, Jong-Myong;Chang, Sung-Pil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.26 no.5
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    • pp.367-372
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    • 2013
  • In this paper, micro dried bio-potential electrodes are demonstrated for sEMG (surface ElectroMyoGraphic) signal measurement using conductive epoxy on the textile fabric. Micro dried bio-potential electrodes on the textile fabric substrate have several advantages over the conventional wet/dry electrodes such as good feeling of wearing, possibility of extended-wearing due to the good ventilation. Also these electrodes on the textile fabric can easily apply to the curved skin surface. These electrodes are fabricated by the screen-printing process with the size of $1mm{\times}10mm$ and the resultant resistance of these electrodes have the average value of $0.4{\Omega}$. The conventional silver chloride electrode shows the average value of $0.3{\Omega}$. However, the electrode on the textile fabric are able to measure the sEMG signal without feeling of difference and this electrode shows the lower resistance of $1.03{\Omega}$ than conventional silver chloride electrode with $2.8{\Omega}$ in the condition of the very sharp curve surface (the radius of curvature is 40 mm).

Potential Energy Surface from Spectroscopic Data in the Photodissociation of Polyatomic Molecules

  • Kim, Hwa Jung;Kim, Yeong Sik
    • Bulletin of the Korean Chemical Society
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    • v.22 no.5
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    • pp.455-462
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    • 2001
  • The time-dependent tracking inversion method is studied to extract the potential energy surface of the electronic excited state in the photodissociation of triatomic molecules. Based on the relay of the regularized inversion procedure and time-dependent wave packet propagation, the algorithm extracts the underlying potential energy surface piece by piece by tracking the time-dependent data, which can be synthesized from Raman excitation profiles. We have demonstrated the algorithm to extract the potential energy surface of electronic excited state for NO2 molecule where the wave packet split on a saddle-shaped surface. Finally, we describe the merits of the time-dependent tracking inversion method compared with the time-independent inversion method and discussed several extensions of the algorithm.

Solution of Gel'fand-Levitan-Marchenko Integral Equation with Restricted Inverse Scattering Potential and Its Applications to Synthesis of Dielectric Constant Distribution (제한된 범위의 역산란 포텐셜을 갖는 Gel'fand-Levitan-Marchenko 적분방정식의 해와 유전율 분포 합성에의 응용)

  • Jang, Wan-Gyu;Jung, Hyun-Soo;Park, Eui-Joon
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2003.11a
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    • pp.54-58
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    • 2003
  • In this study, the solution of Gel'fand-Levitan-Marchenko integral equation in the inverse scattering problem is efficiently solved for arbitrarily specified spectra pattern which are reflected from the restricted potential. The procedure is based on the successive approach without iterations. This method lessens the truncation errors which plague conventional design schemes using specific windows for reflection coefficients. It is shown that the method is adequate for the synthesis of the continuously varying one-dimensional potential of the nonuniformly distributed dielectric constants.

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Statistical Characterization Fabricated Charge-up Damage Sensor

  • Samukawa Seiji;Hong, Sang-Jeen
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.3
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    • pp.87-90
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    • 2005
  • $SiO_2$ via-hole etching with a high aspect ratio is a key process in fabricating ULSI devices; however, accumulated charge during plasma etching can cause etching stop, micro-loading effects, and charge build-up damage. To alleviate this concern, charge-up damage sensor was fabricated for the ultimate goal of real-time monitoring of accumulated charge. As an effort to reach the ultimate goal, fabricated sensor was used for electrical potential measurements of via holes between two poly-Si electrodes and roughly characterized under various plasma conditions using statistical design of experiment (DOE). The successful identification of potential difference under various plasma conditions not only supports the evidence of potential charge-up damage, but also leads the direction of future study.

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs

  • Zhu, Zhaomin;Yan, Dawei;Xu, Guoqing;Peng, Yong;Gu, Xiaofeng
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.3
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    • pp.237-244
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    • 2013
  • A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation. The model is physically derived from Poisson's equation in each region of operation and adopted in the unified regional approach. The proposed model has been verified with numerical solutions, physically scalable with channel length and gate/oxide materials as well as oxide/channel thicknesses.

Surface Potential Change Depending on Molecular Orientation of Hexadecanethiol Self-Assembled Monolayers on Au(111)

  • Ito, Eisuke;Arai, Takayuki;Hara, Masahiko;Noh, Jaegeun
    • Bulletin of the Korean Chemical Society
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    • v.30 no.6
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    • pp.1309-1312
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    • 2009
  • Surface potential and growth processes of hexadecanethiol (HDT) self-assembled monolayers (SAMs) on Au(111) surfaces were examined by Kelvin probe method and scanning tunneling microscopy. It was found that surface potential strongly depends on surface structure of HDT SAMs. The surface potential shift for the striped phase of HDT SAMs chemisorbed on Au(111) surface was +0.45 eV, which was nearly the same as that of the flat-lying hexadecane layer physisorbed on Au(111) surface. This result indicates that the interfacial dipole layer induced by adsorption of alkyl chains is a main contributor to the surface potential change. In the densely-packed HDT monolayer, further change of the surface potential was observed, suggesting that the dipole moment of the alkanethiol molecules is an origin of the surface potential change. These results indicate that the work function of a metal electrode can be modified by controlling the molecular orientation of an adsorbed molecule.

Compact Current Model of Single-Gate/Double-Gate Tunneling Field-Effect Transistors

  • Yu, Yun Seop;Najam, Faraz
    • Journal of Electrical Engineering and Technology
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    • v.12 no.5
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    • pp.2014-2020
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    • 2017
  • A compact current model applicable to both single-gate (SG) and double-gate (DG) tunneling field-effect transistors (TFETs) is presented. The model is based on Kane's band-to-band tunneling (BTBT) model. In this model, the well-known and previously-reported quasi-2-D solution of Poisson's equation is used for the surface potential and length of the tunneling path in the tunneling region. An analytical tunneling current expression is derived from expressions of derivatives of local electric field and surface potential with respect to tunneling direction. The previously reported correction factor with three fitting parameters, compensating for superlinear onset and saturation current with drain voltage, is used. Simulation results of the proposed TFET model are compared with those from a technology computer-aided-design (TCAD) simulator, and good agreement in all operational bias is demonstrated. The proposed SG/DG-TFET model is developed with Verilog-A for circuit simulation. A TFET inverter is simulated with the Verilog-A SG/DG-TFET model in the circuit simulator; the model exhibits typical inverter characteristics, thereby confirming its effectiveness.