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http://dx.doi.org/10.5573/JSTS.2013.13.3.237

A Continuous Regional Current-Voltage Model for Short-channel Double-gate MOSFETs  

Zhu, Zhaomin (Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education)，Department of Electronic Engineering, Jiangnan University)
Yan, Dawei (Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education)，Department of Electronic Engineering, Jiangnan University)
Xu, Guoqing (Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education)，Department of Electronic Engineering, Jiangnan University)
Peng, Yong (Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education)，Department of Electronic Engineering, Jiangnan University)
Gu, Xiaofeng (Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education)，Department of Electronic Engineering, Jiangnan University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.13, no.3, 2013 , pp. 237-244 More about this Journal
Abstract
A continuous, explicit drain-current equation for short-channel double-gate (DG) MOSFETs has been derived based on the explicit surface potential equation. The model is physically derived from Poisson's equation in each region of operation and adopted in the unified regional approach. The proposed model has been verified with numerical solutions, physically scalable with channel length and gate/oxide materials as well as oxide/channel thicknesses.
Keywords
Double-gate MOSFETs; short channel; surface potential;
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1 F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, "Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance," IEEE Electron Device Lett., vol. EDL-8, no. 9, pp. 410- 412, Sept. 1987.
2 K. K. Young, "Analysis of conduction in fully depleted SOI MOSFET's," IEEE Trans. Electron Devices, vol. 36, no. 3, pp. 504-506, Mar. 1989.   DOI   ScienceOn
3 K. Suzuki, T. Tanaka, Y. Tosaka, H. Horie, and Y. Arimoto, "Scaling theory for double-gate SOI MOSFET's," Electron Devices, IEEE Transactions on, vol. 40, no. 12, pp. 2326-2329, Dec. 1993.   DOI   ScienceOn
4 P. Francis, A. Terao, D. Flandre, and F. Van de Wiele, "Modeling of ultrathin double-gate nMOS/SOI transistors," IEEE Trans. Electron Devices, vol. 41, no. 5, pp. 715-720, May 1994.   DOI   ScienceOn
5 J. W. Sleight and R. Rios, "A continuous compact MOSFET model for fully- and partially-depleted SOI devices," IEEE Trans. Electron Devices, vol. 45, no. 4, pp. 821-825, Apr. 1998.   DOI   ScienceOn
6 Y. Taur, "Analytic solutions of charge and capacitance in symmetric and asymmetric doublegate MOSFETs," IEEE Trans. Electron Devices, vol. 48, no. 12, pp. 2861-2869, Dec. 2001.   DOI   ScienceOn
7 X. Shi and M. Wong, "Analytical solutions to the one-dimensional oxide-silicon-oxide system," IEEE Trans. Electron Devices, vol. 50, no. 8, pp. 1793-1800, Aug. 2003.   DOI   ScienceOn
8 Taur et. al., "A Continuous, Analytic Drain-Current Model for DG MOSFETs," IEEE ELECTRON DEVICE LETTERS, Vol. 25, No. 2, FEBRUARY 2004
9 Z. Zhu, X. Zhou, S. C. Rustagi, G. H. See, S. Lin, G. Zhu, C. Wei, and J. Zhang, "Analytic and explicit current model of undoped double-gate MOSFETs," Electron. Lett., Vol. 43, No. 25, pp. 1464-1466, Dec. 2007.   DOI   ScienceOn
10 Zhaomin Zhu, Xing Zhou, Karthik Chandrasekaran, Subhash C. Rustagi, and Gui Hui See, "Explicit Compact Surface-potential and Drain-Current Models for Generic Asymmetric Double-gate Metal- Oxide-Semiconductor Field-Effect Transistors", Japanese Journal of Applied Physics, Vol. 46, No. 4B, 2007, pp 2067-2072   DOI
11 R. M. Corless, G. H. Gonnet, D. E. G. Hare, and D. J. Jeffrey, "Lambert's W Function in Maple," Technical Report, Dept. of Applied Math., Univ. of Western Ontario, Canada.
12 X. Zhou, S. B. Chiah, K. Chandrasekaran, G. H. See, W. Shangguan, S. M. Pandey, M. Cheng, S. Chu, and L.-C. Hsia, Proc. NSTI Nanotech 2005, Anaheim, May, 2005, vol. WCM, pp. 25-30.
13 Xiaoping Liang, and Yuan Taur, "A 2-D Analytical Solution for SCEs in DG MOSFETs," IEEE Trans. Electron Devices, Vol. 51, pp. 1385-1391, Aug. 2004.   DOI   ScienceOn
14 Christian C. Enz, and Eric A. Vittoz, "Chargebased MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design", John Wiley & Sons, Ltd, 2006, pp. 59
15 J. P. Colinge, Solid-State Electron., vol. 48, pp. 897-905, 2004.   DOI   ScienceOn
16 Q. Chen, K. A. Bowman, E. M. Harrell, and J. D. Meindl, "Double jeopardy in the nanoscale court," IEEE Circuits Devices Mag., vol. 19, no.1, pp. 28- 34, Jan. 2003.
17 K. Kim and J. G. Fossum, IEEE Trans. Electron Devices, vol. 48, no. 2, pp. 294-299, Feb. 2001.   DOI   ScienceOn
18 K. Suzuki and T. Sugii, IEEE Trans. Electron Devices, vol. 42, no. 11, pp. 1940-1948, Nov. 1995.   DOI   ScienceOn
19 H. R. Farrah and R. F. Steinberg, "Analysis of double-gate thin-film transistor," IEEE Trans. Electron Devices, vol. ED-14, no. 2, pp. 69-74, Feb. 1967.
20 A. Ortiz-Conde, and F. J. Garcia-Sanchez, and S. Malobabic, "Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs," IEEE Trans. Electron Devices, vol. 52, no. 7, pp. 1669-1672, Jul. 2005.   DOI   ScienceOn
21 Y. S. Yu, S. H. Kim, S. W. Hwang, and D. Ahn, "All-analytic surface potential model for SOI MOSFETs," IEE Proc.-Circuits Devices Systems, vol. 152, no. 2, pp. 183-188, 2005.   DOI   ScienceOn
22 A. Ortiz-Conde, R. Herrera, P. E. Schmidt, F. J. Garcia Sanchez, and J. Andrian, "Long-channel silicon-on-insulator MOSFET theory," Solid-State Electron., vol. 35, pp. 1291-1298, Sept. 1992.   DOI
23 Y. Taur, IEEE Electron Device Lett., vol. 21, pp. 245-247, May 2000.   DOI   ScienceOn
24 J. He, X. Xi, C.-H. Lin, M. Chan, A. Niknejad, and C. Hu, Proc. NSTI WCM-Nanotech 2004, Boston, vol. 2, pp. 124-127, 2004.
25 S. Malobabic, A. Ortiz-Conde, F. J. G. Sanchez, Proc. 5th IEEE International Carrcas Conference on Devices, Circuits and Systems, Dominican Republic, pp. 19-25, Nov, 2004.
26 X. Shi and M. Wong, IEEE Trans. Electron Devices, vol. 50, pp. 1793-1800, Aug. 2003.   DOI   ScienceOn
27 A. Ortiz-Conde, F. J. Garcia Sanchez, M.Guzman, Solid-State Electron., vol. 47, pp. 2067-2074, 2003.   DOI   ScienceOn