• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.114-118
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• 2013

In this study, coupled mode piezoelectric devices for AE sensor application with excellent displacement and piezoelectric characteristics were simulated using ATILA FEM program, and then fabricated. Displacements and electromechanical coupling factors of the piezoelectric devices were investigated. The simulation results showed that excellent displacement and electromechanical coupling factor were obtained when the ratio of diameter/thickness was 1.0. The piezoelectric device of ${\Phi}/T$= 1.0 exhibited the optimum values of fr= 406 kHz, displacement= $6.11{\times}10^{-8}[m]$, $k_{eff}$= 0.648. The results show that the coupled vibration mode piezoelectric device is a promising candidate for the application of AE sensor piezoelectric device.

• 한국전기전자재료학회논문지
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• 제25권4호
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• pp.266-269
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• 2012

The most recently IGBT (insulated gate bipolar mode transistor) devices are in the most current conduction capable devices and designed to the big switching power device. Use this number of the devices are need to high voltage and low on-state voltage drop. And then in this paper design of field stop IGBT is insert N buffer layer structure in NPT planar IGBT and optimization design of field stop IGBT and trench field stop IGBT, both devices have a comparative analysis and reflection of the electrical characteristics. As a simulation result, trench field stop IGBT is electrical characteristics better than field stop IGBT.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.151-154
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• 2020

Radiation noise due to EMI noise generated by the driving circuits of LED lighting devices in a medical imaging room was reduced by decreasing the noise source in the driving circuits and changing the number of corrections in EMI filters. Noise attenuation and filter changes enabled driving circuits that reduced the electromagnetic waves. Such circuits were efficiently designed by using capacitors and inverters in a given space. Therefore, the malfunction of radiation devices can be minimized by using EMI-reduction filter circuits, and reliable operation of medical devices can be expected by blocking electromagnetic waves.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.357-360
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• 2003

In this paper, we designed 4.5kV/1.5kA IGCT devices. GCT thyristor has many superior characteristics compared with GTO thyristor, for examples; snubberless turn-off capability, short storage time, high turn-on capability, small turn-off gate charge and low total power loss of the application system containing device and peripheral parts such as anode reactor and snubber capacitance. In this paper we designed GCT thyristor devices, and analyzed static and dynamic characteristics of GCT thyristor depending on the minority carrier lifetime, n-base thickness and doping concentration of n-base region, respectively. Especially, turn-on and turn-off characteristics are very important characteristics for GCT thyristor devices. So, we considered above characteristic for design and analysis of GCT devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.15-18
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• 1996

The elemental segregation in the sputter-deposited AgInSbTe recording thin films was studied by means of Auger electron spectroscopy and ESCA for the specimens of as-deposited and as heat-treated conditions. Auger electron spectroscopy and ESCA revealed an extremely thin layer of elemental inhomogeneity, especially for the silver, even in as-deposited condition. The chemical analysis results obtained in this alloy system are discussed in terms of process parameters and target microstructure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.84-89
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• 1996

The nucleation and growth of microporosities was observed during the course of annealing treatment of sputter-deposited AgInSbTe thin films. There was a close correlation between the density of microporosity and the sputtering gas pressure in annealed thin films. The void density for a given composition decreased with sputtering gas pressure. It was shown from the present study that the number of porosities decreased while the average porosity size increased as the annealing temperature and holding time increased. The mechanism of porosity formation in the sputter-deposited AgInSbTe thin flus containing Ar-impurity trapped from the Ar-plasma is discussed in the present article.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.14-17
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• 1988

Degradation effects observed in nonvolatile MNOS memory devices with in increasing W/E (Write/Erase) cycling were investigated using n-type MNOS capacitors. The results showed that the density of Si-SiO$_2$ interface states and the conductivity of nitride were increased with W/E cycles, therefore the memory retention characteristics of the MNOS memory devices were degraded. Also, annealing of the degraded devices restored the original Si-SiO$_2$ interface states density, but failed to restore the original nitride conductivity. Based on these experimental results, we found that the degradation of memory retention characteristic was affected by the nitride conductivity rather than by Si-SiO$_2$ interface states.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• 한국광학회지
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• 제2권2호
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• pp.108-113
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• 1991

This paper describes the necessity and utility of Langmuir-Blodgett (L-B) methods in developing molecular electronic devices. It also covers the application area and limitations of the methods. With L-B methods, the membrane thickness can be controlled in a range of 50 nm and 1000 nm depending on nature of the materials and layering methods. The molecular arrangement within the membrane can be altered by altering the surface pressure and nature of the layering materials. Such a variation can be altered by altering the surface pressure and nature of the layering materials. Such a variation can offer a new application of the methods to the future electronic devices. More over 2nd and 3rd nonlinearity generated in the nonsymmetric thin membrane will be used in the development of the optoelectronic devices.

• Transactions on Electrical and Electronic Materials
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• 제18권3호
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• pp.176-179
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• 2017

Non-vacuum processing technology was used to produce $Cs_3Sb$ photocathodes on substrates and fabricate in-situ panel devices. Electrical properties of these panel devices were characterized by measuring anode current and charge dose as functions of devices operation time. An excitation light source with a 475 nm wavelength was used for photocathodes. Results showed that emission properties of these photocathode emitters depended heavily on the vacuum level of these devices and that $Cs_3Sb$ flat emitters had the potential of operating for a long lifetime with stable electron emission characteristics via re-cesiation process in the panel device. These features make $Cs_3Sb$ photocathodes suitable as flat emitters in panel device applications.