Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of the Characteristics of Degradation in Nonvolatile MNOS Memory Devices

비휘발성 MNOS반도체 기억소자의 열화특성에 관한 연구

  • 이상배 (광운대학교 대학원 전자재료공학과) ;
  • 서원철 (광운대학교 대학원 전자재료공학과) ;
  • 김병철 (광운대학교 대학원 전자재료공학과) ;
  • 서광열 (광운대학교 대학원 전자재료공학과)
  • Published : 1988.10.01
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Abstract

Degradation effects observed in nonvolatile MNOS memory devices with in increasing W/E (Write/Erase) cycling were investigated using n-type MNOS capacitors. The results showed that the density of Si-SiO$_2$ interface states and the conductivity of nitride were increased with W/E cycles, therefore the memory retention characteristics of the MNOS memory devices were degraded. Also, annealing of the degraded devices restored the original Si-SiO$_2$ interface states density, but failed to restore the original nitride conductivity. Based on these experimental results, we found that the degradation of memory retention characteristic was affected by the nitride conductivity rather than by Si-SiO$_2$ interface states.

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