• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.359-362
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• 2004

Electron beam on high energy acceleration, which travels deeply and sharply through photoresist, became to be used in e-beam lithography apparatus for nano-patterning in due to its high resolution. An advanced electron beam lithography simulation tool is currently undergoing development for nano-patterning. This paper will demonstrate such simulation efforts with experiments at 200 keV e-beam lithography processes on PMMA, ZEP520 of which photoresist parameters and characteristics will be explained with simulation results. Neureuther parameters was extracted from the contrast curve of the resist

• 전자공학회논문지D
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• 제35D권9호
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• pp.42-47
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• 1998

현재의 전자빔 묘화의 한계를 극복할 수 있는 마이크로 전자빔 시스템의 전자 광학 렌즈를 제작하였고 전자빔 묘화실험을 통하여 이를 검증하였다. 마이크로머시닝기술을 이용하여 실리콘 전극을 제작하고 이를 양극 접합을 통해 조립하여 다층 전극의 전자 광학 렌즈를 제작하였다. 완성된 전자 광학 소자를 초고진공 챔버에 장착하여, STM(Scanning Tunneling Microscope) 팁에서 방출된 전자빔의 focusing 특성을 관찰하였으며 전자를 집속하여 리소그라피를 수행하였다. E-beam 감광막은 PMMA(Poly-methylmethacrylate)를 사용하였고 0.13㎛의 패턴을 형성시킬 수 있었다.

• 전자공학회논문지A
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• 제31A권10호
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• pp.101-107
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• 1994

The PMMA/Ge/AZ trilayer resist decreased proximity effect of backscattering electrons and corrected pattern distoration in order to from deep submicron patterns. In the experiment, the prosiemity effect is decreased by 11% and 30% for the case of 0.9$\mu$m and 1.7$\mu$m AZ, respectively, in trilayer resist compared to monolyer resist. also, the EID of 240$\AA$ Ge film is smaller than that of 500$\AA$ film by 365. 0.1$\mu$m line/space was formed in the 2000$\AA$ PMMA layer with the condition of dose 330${\mu}C/cm^{2}$ and of 150sec of develop time in MIBK : IPA (1:3) developer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1400-1402
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• 1994

Plasma polymerized thin films was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage 30kV, and the pattern in the resist was developed with RIE 80 with argon gas mixture ratio, pressure and RF power. The molecular structure of thin films was investigated by GPC and FT-IR and then was discussed in relation to its quality as a resist. In the case of plasma polymerization, thickness of resist could be controlled by discharge duration and power. Also etch rate is increased as to growing pressure with RIE 80.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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• pp.138-140
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• 1994

Plasma polymerized thin film was prepared using an interelectrod inductively coupled gas-flow-type reactor. Styrene was chosen as the monomer to be used. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage 30kV, and the pattern in the resist was developed with RIE 80 with argon gas mixture ratio, pressure and RF power. The effect of charge of discharge power on growth rate and etching rate of the thin films were studied. The molecular structure of thin films were investigated by FIR and then was discussed in relation to its quality as a resist. In the case of Plasma polymerization, thickness of resist could be controlled by discharge duration and power. Also etch rate is increased as to growing argon gas and RF power with RIE 80.

• ETRI Journal
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• 제45권1호
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• pp.171-179
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• 2023

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13㎛-0.16㎛ to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.

• 전자공학회논문지D
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• 제36D권10호
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• pp.23-30
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• 1999

본 논문에서는 전자선 직접 묘화 시스템을 이용하여 50 nm 이하의 패턴 폭을 가지는 패터닝 결과를 얻기 위한 실험을 수행하였다. SAL601 negative E-beam PR(Photo Resist)를 이용하여 실험을 진행하였고, E-beam 장비의 특성을 최대로 이용하기 위해서 PR의 두께를 100nm로 줄이고, field 크기를 200 ${um}m$로 줄여 실험하였으며, 또한 SAL601 PR의 경우 작은 선폭을 얻기 위해 중요한 요인 중에 하나인 PEB (Post Expose Bake) 온도와 시간을 줄이면서 실험을 진행하였다. 여기에 디지타이징 방식의 최적화를 통하여 50 nm 이하의 패턴 폭을 가지는 단선 패터닝 결과를 얻었다. 이 공정을 이용하여 단전자 메모리 소자에 응용 가능한 50 nm 급의 silicon 양자선과 silicon 양자점을 제작하였다. 이는 현재 많이 연구되고 있는 단전자 기억소자 및 국소 채널 MOS소자 제작에 유용할 것이다.

• 한국정밀공학회지
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• 제25권4호
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• pp.134-139
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• 2008

A spirally arrayed nano-pattern is designed as a model pattern for the next generation optical storage media. The pattern consists off types of embossed rectangular dot, which are 50nm, 100nm, 150nm and 200nm in length and 50nm in width. The height of the dot is designed to be 50nm. The pitch of the spiral track of the pattern is 100nm. A ER(Electron resist) master for this pattern is fabricated by e-beam lithography process. The ER is first spin-coated to be 50nm thick on a Si wafer and then the model pattern is written on the coated ER layer by e-beam. After developing this pattern written wafer in the solution, a ER pattern master is fabricated. The most conventional e-beam machine can write patterns in orthogonal way, so we made our own pattern generator which can write the pattern in circular or spiral way. This program generates the patterns to be compatible with the e-beam machine from Raith(Raith 150). To fabricate 50nm pattern master precisely, a series of experiments were done including the design compensation for the pattern size, optimization of the dose, acceleration voltage, aperture size and developing. Through these experiments, we conclude that the higher accelerating voltages and smaller aperture size are better for mastering the nano pattern which is in order of 50nm. With the optimized e-beam lithography process, a spiral arrayed 50nm pattern master adopting PMMA resist was fabricated to have dimensional accuracy over 95% compared to the designed. Using this pattern master, a metal pattern stamp will be fabricated by Ni electro plating for injection molding of the patterned plastic substrate.

• 한국정밀공학회지
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• 제29권10호
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• pp.1144-1148
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• 2012

Process conditions for generating nano patterns handle different process according to the pattern characteristics, and different process data according to patterns in questions. To efficiently find optimal process conditions for generating nano patterns, process data by experiment is needed consideration of the pattern characteristics concerning the equipment. In particular, coating methods of a cylindrical mold differ from it of a flat plate because of viscosity of coating materials. Also the coating thickness affects nano process and pattern line width. So coating method of coating thickness for cylindrical mold is very important on nano pattern generating. In this study, a method is proposed for coating Photo Resist through the spray in order to coat cylindrical mold and measuring the thickness of coating using measuring tip considering the size of cylindrical mold because there is no method in the existing SEM. The proposed method is applied to a real printed electronics system to verify its accuracy and efficiency.

• Journal of Magnetics
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• 제12권1호
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• pp.12-16
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• 2007

Magnetic excitation and reversal by a spin polarized current via spin transfer have been a central research topic in spintronics due to its application potential. Special techniques are required to fabricate nano-scale magnetic layers in which the effect can be observed and studied. This work discusses the possibility of using electron-beam resists, the nano-scale patterning media, as ion milling mask in a subtractive fabrication method. The possibility is demonstrated by two resists, one positive tone, the ZEP 520A, and one negative tone, the ma-N2403. The advantage and the key points for success of this process will be also addressed.