• Applied Microscopy
• /
• v.48 no.4
• /
• pp.122-125
• /
• 2018

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium ($Ga^+$) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.11
• /
• pp.43-50
• /
• 2007

We have investigated the electro-optical characteristics and reliability of LEDs with the Indium-Tin-Oxide (ITO) electrodes formed by different deposition methods: electron beam evaporation, sputtering, and hybrid method of electron beam evaporation and subsequent sputtering. The deposition method of the ITO electrode has significant influence on the electro-optical characteristics and reliability of LEDs. The LEDs with the ITO electrodes formed by sputtering and electron beam evaporation have problems caused by sputtering damage and increased electrical resistance, respectively, and the problems have been solved by the hybrid method.

• International Journal of Precision Engineering and Manufacturing
• /
• v.7 no.4
• /
• pp.18-22
• /
• 2006

Although many efforts have been made in making nanometer-sized holes, there is still a major challenge in fabricating individual single-digit nanometer holes in a more controllable way for different materials, size distribution and hole shapes. In this paper we describe our efforts to use a top down approach in nanofabrication method to make single-digit nanoholes. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes ($0.2{\mu}\;to\;0.02{\mu}$) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), and others methods. 3) Reducing the hole size to less than 10 nm by epitaxial deposition, FIB or EB induced deposition and micro coating. Preliminary work has been done on thin films (30 nm in thickness) preparation, sub-micron hole fabrication, and E-beam induced deposition. The results are very promising.

• ETRI Journal
• /
• v.29 no.6
• /
• pp.814-816
• /
• 2007

Conventional lithography methods of gold patterning are based on deposition and lift-off or deposition and etching. In this letter, we demonstrate a novel method of gold patterning using spin-coatable gold electron-beam resist which is functionalized gold nanocrystals with amine ligands. Amine-stabilized gold electron beam resist exhibits good sensitivity, 3.0 mC/$cm^2$, compared to that of thiol-stabilized gold electron beam resists. The proposed method reduces the number of processing steps and provides greater freedom in the patterning of complex nanostructures.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.229-229
• /
• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2002.11a
• /
• pp.136-136
• /
• 2002

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.2172-2174
• /
• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.68-69
• /
• 1998

Nano-crystalline silicon(nc-Si) thin films were directly depposited by ion beam assisted electron beam depposition (IBAED) method. The visibe luminescence in IBAED sampples were originated from not an oxygen bond but Si nano-crystallites. And we can conclude that the ion beam would be contribute to the suppression of the Si-O bond formation.

• Journal of the Korean Vacuum Society
• /
• v.13 no.2
• /
• pp.59-64
• /
• 2004

A study on the semiconductor laser-based atomic absorption spectroscopy was performed for monitoring physical vapor deposition process. Gadolinium metal was vaporized with a high evaporation rate by electron beam heating. Real-time atomic absorption spectra were measured by using tunable semiconductor laser beam at 770-794 nm (center wavelength of 780 nm) and its second harmonic at 388-396 nm. Atomic densities of metal vapor can be calculated from the absorption spectra measured. We plot the atomic densities as a function of the electron beam power and compare with the evaporation rates measured by quartz crystal monitor. We demonstrate that the semiconductor laser-based spectroscopic system developed in this study can be applied to monitor the physical vapor deposition process for other metals such as titanium.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.7
• /
• pp.615-619
• /
• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.