Browse > Article
http://dx.doi.org/10.4313/JKEM.2007.20.7.615

Study of a MgO Protective Layer Deposited with Oxygen Ion Beam Assisted Deposition in an AC PDP  

Kwon, Sang-Jik (경원대학교 전자공학과)
Li, Zhao-Hui (경원대학교 전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.20, no.7, 2007 , pp. 615-619 More about this Journal
Abstract
MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.
Keywords
Plasma display panel (PDP); MgO; Ion beam assisted deposition (IBAD); Secondary electron emission coefficient; $F/F^+$ center;
Citations & Related Records
연도 인용수 순위
  • Reference
1 H. D. Hagstrom, 'Theory of Auger neutralization of ions at the surface of a diamond-type semiconductor', Phys. Rev., Vol. 122, No. 1, p. 83, 1960   DOI
2 Y. Motoyama and F. Sato, 'Calculation of secondary electron emission yield (gamma) from MgO surface', IEEE Trans. Plasma Sci., Vol. 34, No.2. p. 336, 2006   DOI   ScienceOn
3 M. A. Cazalilla, N. Lorente, R. Diez. Muino, J.-P. Gauyacp, D. Teillet-Billy, and P. M. Echenique, 'Theory of Auger neutralization and de-excitation of slow ions at metal surfaces', Phys. Rev. B, Vol. 58, No. 20, p. 13911, 1998
4 G. P. Summers, T. M. Wilson, B. T. Jeffries, H. T. Toher, Y. Chen, and M. M. Abraham, 'Luminescence from oxygen vacancies in MgO crystals thermochemically reduced at high temparatures', Phys. Rev. B, Vol. 27, No. 2, p. 1283, 1983   DOI
5 M. Wintersgill, J. Fontanellia, C. Andeen, and D. Schuele, 'The temperature variation of the dielectric constant of 'Pure'CaF2, SrF2, BaF2, and MgO', J. Appl. Phys., Vol. 50, No. 12, p. 8259, 1979   DOI
6 T. Urade, T. Iemori, M. Osawa, N. Nakayama, and I. Morita, 'A protecting layer for the dielectric in AC plasma panels', IEEE Trans. Elec. Dev., Vol. 23, No. 3, p. 313, 1976   DOI   ScienceOn
7 R. I. Eglitis, M. M. Kuklja, E. A. Kotomin, A. Stashans, and A. I. Popov, 'Semiempirical simulations of the electron centers in MgO crystal', Compo Mate. Sci., Vol. 5, No. 4. p. 298, 1996   DOI   ScienceOn
8 G. H. Rosenblatt, M. W. Rowe, G. P. Williams, Jr., R. T. Williams, and Y. Chen, 'Luminescence of F and $F^+$ centers in magnesium oxide', Phys. Rev. B, Vol. 39, No. 14, p. 10309, 1989   DOI   ScienceOn
9 T. Hirakawa, S. Goto, and K. Uchiike, 'Effect of evaporation conditions on the properties of MgO thin films as protecting material', SID'03 Proceeding, p. 896, 2003
10 H. D. Hagstrom, 'Theory of Auger ejection of electrons from metal by ions', Phys. Rev., Vol. 96, No. 2, p. 336, 1954