• Applied Microscopy
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• 제48권4호
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• pp.122-125
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• 2018

The focused ion beam (FIB) method is widely used to prepare specimens for observation by transmission electron microscopy (TEM), which offers a wide variety of imaging and analytical techniques. TEM has played a significant role in material investigation. However, the FIB method induces amorphization due to bombardment with the high-energy gallium ($Ga^+$) ion beam. To solve this problem, electron beam induced deposition (EBID) is used to form a protective layer to prevent damage to the specimen surface. In this study, we introduce an optimized TEM specimen preparation procedure by comparing the EBID of carbon and tungsten as protective layers in FIB. The selection of appropriate EBID conditions for preparing specimens for TEM analysis is described in detail.

• 대한전자공학회논문지SD
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• 제44권11호
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• pp.43-50
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• 2007

ITO(Indium Tin Oxide) 전극 형성방법은 ITO 박막 자체의 전기 광학적 특성 뿐 아니라 ITO를 전극으로 하는 청색 발광 다이오드(파장 469nm)의 전기 광학적 특성 및 신뢰성에도 큰 영향을 미침을 확인하였다. 세 가지 ITO 전극 형성 방법 즉 electron beam evaporation법과 sputtering법, 그리고 electron beam evaporation법으로 먼저 증착한 뒤에 sputtering법으로 증착한 hybrid법 등을 사용하여 청색 발광 다이오드를 제작한 다음에 ITO 박막의 특성과 aging에 따른 발광 다이오드의 전기 광학적 특성 변화를 고찰하였다. 그 결과, ITO 전극을 sputtering 또는 electron beam evaporation 방법으로 형성한 발광 다이오드는 각각 sputtering damage의 문제와 전기저항이 증가하는 문제점을 안고 있음을 발견하였다. 그리고 이 문제점들을 hybrid 방법으로 해결하였다.

• International Journal of Precision Engineering and Manufacturing
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• 제7권4호
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• pp.18-22
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• 2006

Although many efforts have been made in making nanometer-sized holes, there is still a major challenge in fabricating individual single-digit nanometer holes in a more controllable way for different materials, size distribution and hole shapes. In this paper we describe our efforts to use a top down approach in nanofabrication method to make single-digit nanoholes. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes ($0.2{\mu}\;to\;0.02{\mu}$) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), and others methods. 3) Reducing the hole size to less than 10 nm by epitaxial deposition, FIB or EB induced deposition and micro coating. Preliminary work has been done on thin films (30 nm in thickness) preparation, sub-micron hole fabrication, and E-beam induced deposition. The results are very promising.

• ETRI Journal
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• 제29권6호
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• pp.814-816
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• 2007

Conventional lithography methods of gold patterning are based on deposition and lift-off or deposition and etching. In this letter, we demonstrate a novel method of gold patterning using spin-coatable gold electron-beam resist which is functionalized gold nanocrystals with amine ligands. Amine-stabilized gold electron beam resist exhibits good sensitivity, 3.0 mC/$cm^2$, compared to that of thiol-stabilized gold electron beam resists. The proposed method reduces the number of processing steps and provides greater freedom in the patterning of complex nanostructures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.136-136
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• 2002

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.68-69
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• 1998

Nano-crystalline silicon(nc-Si) thin films were directly depposited by ion beam assisted electron beam depposition (IBAED) method. The visibe luminescence in IBAED sampples were originated from not an oxygen bond but Si nano-crystallites. And we can conclude that the ion beam would be contribute to the suppression of the Si-O bond formation.

• 한국진공학회지
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• 제13권2호
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• pp.59-64
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• 2004

반도체 레이저를 광원으로 사용하는 원자흡수분광 방법으로 금속증기의 증착 공정을 감시하는 연구를 수행하였다. 전자빔 가열 방식을 이용하여 gadolinium (Gd) 금속을 대량으로 증발시켰다. 파장 영역이 770-794 nm (중심파장 780 nm)인 반도체 레이저빔과 388-396 nm 영역의 제 2 고조파 빔을 진공용기에 입사시켜 증발되는 금속증기의 원자흡수 스펙트럼을 실시간으로 기록하였다. 흡수 스펙트럼을 분석하여 증기의 원자밀도를 구했다. 전자빔 출력을 변화시키면서 측정한 원자밀도를 수정 결정 모니터 장치를 사용하여 측정한 증착률과 비교하였다. 산업적으로 많이 사용되는 Ti 등의 증착 공정 감시에 이 실험에서 구현한 레이저 분광장치를 적용할 수 있다는 것을 제시하였다.

• 한국전기전자재료학회논문지
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• 제20권7호
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• pp.615-619
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• 2007

MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.