• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.114-114
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• 2009

ZnO has received considerable attention due to its potential applicability to optoelectronic devices such as ultraviolet-light emitting diodes (UVLEDs) and laser diodes (LDs). As well known, however, polar ZnO with the growth direction along the c-axis has spontaneous and piezoelectric polarizations that will result in decreased quantum efficiency. Recently, nonpolar ZnO has been studied to avoid such a polarization effect. In order to realize applications of nonpoar ZnO-based films to LEDs, growth of high quality alloys for quantum well structures is one of the important tasks that should be solved. $Mg_xZn_{1-x}O$ and $Cd_xZn_{1-x}O$ is ones of most promising alloys for this application because the alloys of ZnO with MgO and CdO provide a wide range of band-gap engineering spanning from 2.4 to 7.8 eV. In this study, we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). we investigated on $Mg_xZn_{1-x}O$ films grown with various Mg/Zn flux ratios. The films were grown on R-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). With the relatively low Mg/Zn flux ratios, a typical striated anisotropic surface morphology which was generally observed from the nonpolar (11-20) ZnO film on r-plane sapphire substrates. By increasing the Mg/Zn flux ratio, however, additional islands were appeared on the surface and finally the surface morphology was entirely changed, which was generally observed for the (0001) polar ZnO films by losing the striated morphology. Investigations by X-ray $\Theta-2{\Theta}$ diffraction revealed that (0002) and (10-11) ZnO planes are appeared in $Mg_xZn_{1-x}O$ films by increasing the Mg/Zn flux ratio. Further detailed investigation by transmission electron microscopy (TEM) and photoluminescence (PL) will be discussed.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.4
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• pp.39-46
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• 2003

Sn-Cu eutectic solder bump was fabricated by electroplating for flip chip and its characteristics were studied. A Si-wafer was used as a substrate and the UBM(Under Bump Metallization) of Al(400 nm)/Cu(300 nm)/Ni(400 nm)/Au(20 nm) was coated sequentially from the substrate to the top by an electron beam evaporator. The experimental results showed that the plating ratio of the Sn-Cu increased from 0.25 to 2.7 $\mu\textrm{m}$/min with the current density of 1 to 8 A/d$\m^2$. In this range of current density the plated Sn-Cu maintains its composition nearly constant level as Sn-0.9∼1.4 wt%/Cu. The solder bump of typical mushroom shape with its stem diameter of 120 $\mu\textrm{m}$ was formed through plating at 5 A/d$\m^2$ for 2 hrs. The mushroom bump changed its shape to the spherical type of 140 $\mu\textrm{m}$ diameter by air reflow at $260^{\circ}C$. The homogeneity of chemical composition for the solder bump was examined, and Sn content in the mushroom bump appears to be uneven. However, the Sn distributed more uniformly through an air reflow.

• Journal of the Mineralogical Society of Korea
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• v.28 no.1
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• pp.9-16
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• 2015

A mineralogical analysis on the factors affecting the luster of pearls was carried out using gravity measurement, optical microscope observation, X-ray diffraction analysis, and scanning electron microscopy. We divided the seawater cultured pearls from Tongyeong into the following four types based on luster and shape; good luster and round (LR), lackluster and round (LLR), lackluster and baroque (LLB), and lackluster and two nucleus (LTN) pearls. Pearls with high-quality luster had slightly lower specific gravity as compared to pearls with low-quality luster, but both these types of pearls are within the specific gravity range of commercial pearls. Regarding the cross-sectional thickness of the mother-of-pearl layer, LR pearls showed a uniform thickness of about 0.3 mm in average. On the other hand, LLR pearls were characterized by relatively thinner, but uniform thickness. LTN and LLB pearls showed a tendency of significantly large variation in thickness even within a single pearl. For the surface of pearls, pearls with high-quality luster showed narrower and clearer growth lines of aragonite crystals as compared to pearls with low-quality luster. Pearls with high-quality luster were characterized by fewer aragonite crystal lattice defects as compared to pearls with low-quality luster, and the former showed parallel arrangement, thinner thickness, and less difference in thickness on the surface and inside. If a pearl has a prismatic layer, it is composed of aragonite with calcite in the prismatic and nacreous layer, and calcite content is very high in the lackluster pearl. Pearls without a prismatic layer were devoid of calcite irrespective of their quality of luster, and were composed of aragonite.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.13 no.3
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• pp.235-242
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• 2015

A commercially available copper mesh was investigated as an iodine off-gas capturing medium for pyroprocessing, with an aim to replace costly silver based adsorbents. Theoretical calculation results suggested that the reaction between metallic copper and gaseous iodine will occur spontaneously to produce copper iodide in the temperature range of 100 ~ 500℃. The effect of the reaction temperature on iodine capturing efficiency was investigated by experimentation, and it was found that 5 and 6 wt% of iodine (initial mass 2.0 g) was captured by a single copper mesh (0.26 g) at 300 and 400℃, respectively. The repeated experimental results also suggested that copper utilization can be increased with the help of the spontaneous detachment of the reaction product (CuI) from a copper mesh. The formation of the CuI phase was confirmed using the X-ray diffraction technique, and the surface morphology of the reaction product was observed using scanning electron microscopy.

• Journal of the Korean Chemical Society
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• v.46 no.3
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• pp.187-193
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• 2002

The reaction rates of substituted 6-chloroquinoline with p-substituted benzoyichorides $p-CH_3,$ p-H, $p-NO_2$ have been measured by conductometry in acetonitrile, and the constants are determined at various temperatures (10, 15, 20, $25^{\circ}C$) and pressures (1, 200, 500, 1000 bar). From the values of rate constants, the activation parameters (Ea, ${\Delta}V^{\neq}$, ${\Delta}H^{\neq}$, ${\Delta}S^{\neq}$, ${\Delta}G^{\neq}$) and the pressure dependence of Hammett p values were determined. The rate constants increased with increasing temperatures and pressures, and are further increased to introduction to the electron donor substiuents in substrate $(p-NO_2)$ with 6-chloroqinoline. When the activation volume and the activation entropy are all negative And the Hammett p values are positive for the substrate over the pressure and temperature range studied. The results of kinetic studies for pressure and substituent show that thease reactions proceed in typical $S_N2$ reaction mechanism and "associative $S_N2$" in bond formation favored with increasing pressures.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.53-58
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• 2008

In this study, we fabricated embedded IC (Double Pole Double throw switch chip) polymer substrate and evaluate it for 2.4 GHz WiFi application. The switch chips were laminated using FR4 and ABF(Ajinomoto build up film) as dielectric layer. The embedded DPDT chip substrate were interconnected by laser via and Cu pattern plating process. DSC(Differenntial Scanning Calorimetry) analysis and SEM image was employed to calculate the amount of curing and examine surface roughness for optimization of chip embedding process. ABF showed maximum peel strength with Cu layer when the procuring was $80\sim90%$ completed and DPDT chip was laminated in a polymer substrate without void. An embedded chip substrate and wire-bonded chip on substrate were designed and fabricated. The characteristics of two modules were measured by s-parameters (S11; return loss and S21; insertion loss). Insertion loss is less than 0.55 dB in two presented embedded chip board and wire-bonded chip board. Return loss of an embedded chip board is better than 25 dB up to 6 GHz frequency range, whereas return loss of wire-bonding chip board is worse than 20 dB above 2.4 GHz frequency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.83-91
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• 1994

We have constructed a vertical gradient freeze (VGF) grower for GaAs single crystals 2 inch in diameter and have grown semi-insulating GaAs co-doped with Cr and In. For the co-doped crystal, the segregation coefficients of the dopants remain unchanged when compared to those doped with only Cr or In. The concentration of Cr and in atoms range from about $2{\Times}10_{16} to 3{imes}10^{17} cm^{-3}$ and $2{\Times}10^{19} to 3{\Times}10^{20} cm^{-3}$ at the seed to the tail part of the grown crystal, respectively. The averaged dislocation etch pit density is found to be less than $8000 cm^{-2}$ throughout the ingot. It is also found that there is some evidence of lattice hardening for the crystal in which the dislocation density is decreased to less than $1000 cm^{-2}$ as In concentration increases. The resistivity increases abruptly from $10^{-2}$ up to $10^8$ Ohm-cm, while the carrier concentration decreases from $10^{16}$ to $10^8 cm^{-3}$ along the growth direction of the GaAs crystal. Semi-insulating properties can be obtained above a critical concentration of Cr of about $6{\Times}10{^16} cm^{-3}$ in the crystal. The main deep levels existing in the GaAs: Cr,In sample are two electron traps at $E_C-0.81eV, E_C-0.35eV$, and two hole traps at $E_V+0.89eV, E_V+0.65eV$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.167-172
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• 2013

Titanium dioxides nanoparticles coated aluminum oxide powders were fabricated by pulsed laser deposition (PLD) with Nd : YAG laser at 266 nm. The Pulse laser energy is 100 mJ/pulse. During the irradiation of the focused laser on the $TiO_2$ target, Ar gas is supplied into the chamber. The gas pressure is varied in a range of $1{\times}10^{-2}$ to 100 Pa. Titanium dioxides nanoparticles deposited aluminum oxide powders were characterized by using energy dispersive X-ray spectroscopy (EDX), high resolution transmission electron microscopy (HR-TEM), in order to understand the effect of Ar background gas on surface morphology and properties of the powders. The coated $TiO_2$ nanoparticles had nanosized spherical shape and the crystallite sizes of 10~30 nm. The morphology of coated $TiO_2$ nanoparticles is not affected by gas pressure. However, the particle size and crystallinity slightly increased with the increase of gas pressure. According to this technique, the size and crystallinity of nanoparticles can be easily controlled by controlling pressure during the laser irradiation.

• Journal of Periodontal and Implant Science
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• v.28 no.4
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• pp.601-611
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• 1998

Ion irradiation is a very promising tool to modify the chemical structure and physical properities of polymers. This study was aimed to evaluate the cellular adhesion to ion beam-irradiated surface of biodegradable poly-l-lactide(PLLA) membrane. The PLLA membrane samples were irradiated by using 35 KeV $Ar^+$ to fluence of $5{\times}10^{13}$, $5{\times}10^{14}$ and $5{\times}10^{15}\;ion/cm^2$. Water contact angles to control and each dose of ion beam-irradiated PLLA membranes were measured. Cultured fetal rat calvarial osteoblasts were seeded onto control and each dose of ion beam-irradiated PLLA membranes and cultured. After 24 hours, each PLLA membranes onto which osteoblasts attached were examined by scanning electron microscopy(SEM). Osteoblasts were removed from each PLLA membrane and then, the vitality and the number of cells were calibrated. Alkaline phosphatase of detached cells from each PLLA membranes were measured. Ion beam-irradiated PLLA membranes showed no significantly morphological change from control PLLA membranes. In the measurement of water contact angle to each membrane, the dose range of ion beam employed in this study reduced significantly contact angles. Among them, $5{\times}10^{14}\;ion/cm^2$ showed the least contact angle. The vitalities of osteoblastes detached from each membranes were confirmed by flow cytometer and well attached cells with their own morphology onto each membranes were observed by SEM. A very strong improvement of the cell adhesion and proliferation was observed for ion beam-irradiated surfaces of PLLA membranes. $5{\times}10^{15}\;ion/cm^2$ exhibited the most strong effect also in cellular adherence. ALPase activities also tended to increase in ion beam-irradiated membranes but statistical differences were not found. These results suggested that ion beam irradiation is an effective tool to improve the adhesion and spreading behaviour of the cells onto the biodegradable PLLA membranes for the promotion of membrane-tissue integration.