• Korean Journal of Materials Research
• /
• v.14 no.4
• /
• pp.293-299
• /
• 2004

Transition metal ions doped $TiO_2$ nanostructured powders were prepared with simply heating aqueous $TiOCl_2$ solutions, contained various metal ions (Ni, Al, Fe, Zr, and Nb) of 1.47 mol% added as metal-chlorides, at $100^{\circ}C$ for 4 hrs by homogeneous precipitation process under suppressing conditions of water vaporization. The characterizations for prepared $TiO_2$ powders were carried out to observe doping of metal ions, their concentrations and microstructures using XRD, UV-VIS (DRS), XPS, SEM, TEM and ICP. Also, photo-oxidative abilities were evaluated by decomposition of 4-chlorophenol (4CP) under ultraviolet light irradiations. No secondary oxide phases were formed in all the $VTiO_2$ powders, showing doping with various transition metal ions. When adding ions ($Ni^{2+}$ or$ Al^{3+ }$ and $Zr^{4+}$ ) having valance states or ionic radii greatly different from those of $Ti^{4+}$ , the $TiO_2$ powders of mixed anatase and rutile phases were formed, whereas in the case of additions of $^Fe{3+ }$ and $Nb^{ 5+}$ as well as no addition of metal ion the powders with pure rutile phase alone were formed. Among the prepared $TiO_2$ powders, Ni$^{2+}$ doped $TiO_2$ powders, containing a small amount of anatase phase, showed excellent photo-oxidative ability in 4CP decomposition because of relative decreases in electron-hole recombination and poisoning of $TiO_2$ surface during the photoreaction.n.

• Korean Journal of Materials Research
• /
• v.30 no.11
• /
• pp.581-588
• /
• 2020

Reducing CO₂ into high value fuels and chemicals is considered a great challenge in the 21st century. Efficiently activating CO₂ will lead to an important way to utilize it as a resource. This article reviews the latest progress of g-C₃N₄ based catalysts for CO₂ reduction. The different synthetic methods of g-C₃N₄ are briefly discussed. Article mainly introduces methods of g-C₃N₄ shape control, element doping, and use of oxide compounds to modify g-C₃N₄. Modified g-C₃N₄ has more reactive sites, which can significantly reduce the probability of photogenerated electron hole recombination and improve the performance of photocatalytic CO₂ reduction. Considering the literature, the hydrothermal method is widely used because of its simple equipment and process and easy control of reaction conditions. It is foreseeable that hydrothermal technology will continue to innovate and usher in a new period of development. Finally, the prospect of a future reduction of CO₂ by g-C₃N₄-based catalysts is predicted.

• Current Photovoltaic Research
• /
• v.3 no.4
• /
• pp.130-134
• /
• 2015

The high efficiency cell research processes through the KF post deposition treatment (PDT) of the $Cu(In,Ga)Se_2(CIGS)$ thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, $400^{\circ}C$ changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, $350^{\circ}C$) in the greatly reduced, and in $400^{\circ}C$ tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.

• Korean Journal of Optics and Photonics
• /
• v.3 no.3
• /
• pp.183-190
• /
• 1992

Luminescence properties of asymmetric double quantum well structure composed of $Al_x/Ga_{1-x}$ /As AIAs/GaAs have been studied by steady state and time-resolved photoluminescence and phtoluminescence excitation spectroscopy at low temperature. Two quantum well samples with different barrier thickness (15$\AA$ and 150$\AA$) were prepared to investigate the dependence of tunneling characteristics on barrier thickness. The abscence of excitonic recombination peak from $Al_x/Ga_{1-x}$As well for the 15$\AA$ barrier sample indicates a very fast electron tunneling to GaAs well. Meanwhile, T-X transition between well and barrier is supposed to be a major route for the fast decay of luminescence from $Al_x/Ga_{1-x}$As well in the 150$\AA$ barrier sample. Time-resolved photduminescence from GaAs well of 15$\AA$ sample shows the exsitence of the rise with 100 ps which is attributed to the hole tunneling.

• Current Photovoltaic Research
• /
• v.9 no.3
• /
• pp.84-95
• /
• 2021

The power conversion efficiency of Cu₂ZnSnSe₄ (CZTSe) solar cells depends on the absorber layer thickness; however, changes in the characteristics of the cells with varying absorber layer thickness are unclear. In this study, we investigated the changes in the characteristics of CZTSe solar cells for varying absorber layer thickness. Five absorber thicknesses were employed: CZTSe1 2.78 ㎛, CZTSe2 1.01 ㎛, CZTSe3 0.55 ㎛, CZTSe4 0.29 ㎛, and CZTSe5 0.15-0.23 ㎛. The efficiency of the CZTSe solar cells decreased as the absorber thickness decreased, resulting in power conversion efficiencies of 10.45% (CZTSe1), 8.67% (CZTSe2), 7.14% (CZTSe3), 3.44% (CZTSe4), and 1.54% (CZTSe5). As the thickness of the CZTSe absorber layer decreased, the electron-hole recombination at the grain boundaries and the absorber-back-contact interface increased. This caused an increase in the current loss, owing to light loss in the long-wavelength region. In addition, as the thickness of the CZTSe absorber layer decreased, more ZnSe was produced, and the resulting defects and defect clusters led to an open-circuit voltage loss.

• Journal of the Korean institute of surface engineering
• /
• v.56 no.3
• /
• pp.208-218
• /
• 2023

Photocatalysts are advanced materials which accelerate the photoreaction by providing ordinary reactions with other pathways. The catalysts have various advantages, such as low-cost, low operating temperature and pressure, and long-term use. They are applied to environmental and energy field, including the air and water purification, water splitting for hydrogen production, sterilization and self-cleaning surfaces. However, commercial photocatalysts only absorb ultraviolet light between 100 and 400 nm of wavelength which comprises only 5% in sunlight due to the wide band gap. In addition, rapid recombination of electron-hole pairs reduces the photocatalytic performance. Recently, studies on blackening photocatalysts by laser, thermal, and plasma treatments have been conducted to enhance the absorption of visible light and photocatalytic activity. The disordered structures could yield mid-gap states and vacancies could cause charge carrier trapping. Herein, liquid phase plasma (LPP) is adopted to synthesize Ag-doped black ZnO for the utilization of visible-light. The physical and chemical characteristics of the synthesized photocatalysts are analyzed by SEM/EDS, XRD, XPS and the optical properties of them are investigated using UV/Vis DRS and PL analyses. Lastly, the photocatalytic activity was evaluated using methylene blue as a pollutant.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.19 no.6
• /
• pp.709-714
• /
• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Korean Chemical Engineering Research
• /
• v.55 no.1
• /
• pp.93-98
• /
• 2017

This experiment investigated characteristic changes in a $Cu_2ZnSnS_4$(CZTS) solar cell by applying a $Zn(O_x,S_{1-x})$ butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$, and $Zn(O_{0.17},S_{0.83})$, the $Zn(O_{0.76},S_{0.24})$ buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the $Zn(O_{0.76},S_{0.24})$ buffer layer to the device, the buffer layer in the device showed the composition of $Zn(O_{0.7},S_{0.3})$ because S diffused into the buffer layer from the absorber layer. The $Zn(O_{0.7},S_{0.3})$ buffer layer, having a lower energy level ($E_V$) than a CdS buffer layer, improved the $J_{SC}$ and $V_{OC}$ characteristics of the CZTS solar cell because the $Zn(O_{0.7},S_{0.3})$ buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the $Zn(O_{0.7},S_{0.3})$ buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.

• Applied Chemistry for Engineering
• /
• v.19 no.3
• /
• pp.299-303
• /
• 2008

A thermally cross-linkable polymer, poly[(2,5-dimethoxy-1,4-phenylenevinylene)-alt-(1,4-phenylenevinylene)] (Cross-PPV), was synthesized by the Heck coupling reaction. In order for the polymer to be cross-linkable, 20 mol% excess divinylbenzene was added. The chemical structure of Cross-PPV and thermally crosslinked Cross-PPV were confirmed by FT-IR spectroscopy. From the FT-IR, UV-Vis, and PL spectral data, thermally crosslinked Cross-PPV was insoluble in common organic solvents. The HOMO and LUMO energy level of thermally cross-linked Cross-PPV were estimated -5.11 and -2.56 eV, respectively, which were determined by the cyclic voltammetry and UV-Vis spectroscopy. From the energy level data, one can easily notice that thermally crosslinked Cross-PPV can be used for hole injection layer effectively. Bilayer structured device (ITO/crosslinked Cross-PPV/PM-PPV/Al) was fabricated using poly(1,4-phenylenevinylene-(4-dicyanomethylene-4H-pyran)-2,6-vinylene-1,4-phenylenevinylene-2,5-bis(dodecyloxy)-1,4-phenylenevinylene (PM-PPV) as the emitting layer, which have HOMO and LUMO energy levels of -5.44 eV and -3.48 eV, respectively. The bilayered device had much enhanced the maximum efficiency (0.024 cd/A) and luminescence ($45cd/m^2$) than those of a single layer device (ITO/PM-PPV/Al, 0.003 cd/A, $3cd/m^2$). The enhanced performance originated from that fact that cross-linked Cross-PPV facilitatse the hole injection to the emissive layer and the injected hole and electron from ITO and Al are recombined in emitting layer (PM-PPV) effectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.9 no.1
• /
• pp.9-13
• /
• 2002

Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.