• ETRI Journal
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• 제45권1호
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• pp.171-179
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• 2023

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13㎛-0.16㎛ to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.

• 대한기계학회논문집A
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• 제34권11호
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• pp.1637-1642
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• 2010

본 연구는 초슬림의 광학 시스템에 적용 가능한 서브 미크론의 패턴으로 구성된 고효율 회절 렌즈의 금형을 가공하는 방법에 관한 것이다. 서브미크론의 패턴으로 구성된 고효율 회절 렌즈를 가공하기 위해 분해능이 뛰어난 전자빔 노광장치와 고속 원자 빔 플라즈마 에칭 공정을 바탕으로 다중 정렬방식을 이용하였다. 다중 정렬 방식을 이용하여 고효율 회절 렌즈를 가공 하기 위해서는 정렬 오차, 노광 오차 그리고 에칭 오차를 최소화 해야만 한다. 본 연구에서는 이 주요한 세 가지 가공 오차를 최소화 하였으며, 이를 바탕으로 지름 $267\;{\mu}m$ (NA=0.25), 최소 선 폭 226 nm, 렌즈 두께 819 nm 를 가지는 고효율 회절 렌즈 가공을 실현 하였다.

• 한국진공학회지
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• 제8권4A호
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• pp.456-460
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• 1999

Experimental studies of laser micromachining on Mo diaphragm using piezo Q-switched Nd:YAZ laser have been performed. Application of miniaturized micorcolumn electron gun arrays as a potential electron beam lithography or portable mini-scanning electron microscope (SEM) application have recently extensively examined. The conventional microcolumn fabrication technique would give a limitation on the minimization of aberration, In this paper, we obtained 20~30 $\mu \textrm m$aperture of laser micromachining on Mo diaphragm using piezo Q-swithed Nd:YAG laser. The geometrical figures, such as the diameter and the preciseness of the drilled aperture are dependent upon the total energy of the laser pulse train, laser pulse width, and the diameter of laser spot in addition to the materials-dependent parameters.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.78-78
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• 1999

Experimental studies of laser micromachining on Mo metal using piezo Q-switched Nd:YAG laser have been performed. Miniaturized microcolumn electron gun arrays as a potential electron beam lithography or portable mini-scanning electron microscope application have recently extensively examined. For these purpose, the electro-static electron lens and deflector system called microcolumn has to be assembled. The conventional microcolumn fabrication technique would gave a limitation on the minimization of aberration. The current technique of a 1 $\mu$m misalignment would lead to ~1.3 nm coma. In order to reduce aberration, assembling the microcolumn component followed by laser drilling should be very beneficial. In this report, we will address the preliminary report of laser micromachining on Mo substrate using piezo Q-switched Nd:YAG laser. The geometrical figures, such as the diameter and the depth of the frilled aperture are dependent upon the total energy of the laser pulse train, laser pulsewidth, and the diameter of laser beam in addition to the materials-dependent parameters.

• 전자공학회논문지D
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• 제36D권10호
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• pp.23-30
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• 1999

본 논문에서는 전자선 직접 묘화 시스템을 이용하여 50 nm 이하의 패턴 폭을 가지는 패터닝 결과를 얻기 위한 실험을 수행하였다. SAL601 negative E-beam PR(Photo Resist)를 이용하여 실험을 진행하였고, E-beam 장비의 특성을 최대로 이용하기 위해서 PR의 두께를 100nm로 줄이고, field 크기를 200 ${um}m$로 줄여 실험하였으며, 또한 SAL601 PR의 경우 작은 선폭을 얻기 위해 중요한 요인 중에 하나인 PEB (Post Expose Bake) 온도와 시간을 줄이면서 실험을 진행하였다. 여기에 디지타이징 방식의 최적화를 통하여 50 nm 이하의 패턴 폭을 가지는 단선 패터닝 결과를 얻었다. 이 공정을 이용하여 단전자 메모리 소자에 응용 가능한 50 nm 급의 silicon 양자선과 silicon 양자점을 제작하였다. 이는 현재 많이 연구되고 있는 단전자 기억소자 및 국소 채널 MOS소자 제작에 유용할 것이다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.155-156
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• 2010

• 한국광학회:학술대회논문집
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• 한국광학회 1991년도 광학 및 양자전자학 워크샵
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• pp.41-46
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• 1991

A block quantized binary phase hologram is introduced for optical interconnection and encoded with a simulated alogorithm to achieve high diffraction efficiency and superession of unwanted spots. The block quantized binary phase holograms encoded with the algorithm are fabricated with electron beam lithography and chemical etching. the fabricated holograms showed excellent perfoemances for optical interconnection.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제24회 학술발표회 초록집
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• pp.102-102
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• 2003

• 한국정밀공학회지
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• 제29권10호
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• pp.1144-1148
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• 2012

Process conditions for generating nano patterns handle different process according to the pattern characteristics, and different process data according to patterns in questions. To efficiently find optimal process conditions for generating nano patterns, process data by experiment is needed consideration of the pattern characteristics concerning the equipment. In particular, coating methods of a cylindrical mold differ from it of a flat plate because of viscosity of coating materials. Also the coating thickness affects nano process and pattern line width. So coating method of coating thickness for cylindrical mold is very important on nano pattern generating. In this study, a method is proposed for coating Photo Resist through the spray in order to coat cylindrical mold and measuring the thickness of coating using measuring tip considering the size of cylindrical mold because there is no method in the existing SEM. The proposed method is applied to a real printed electronics system to verify its accuracy and efficiency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.291-291
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• 2010

Electron-beam lithography (EBL) process is a versatile tool for a fabrication of nanostructures, nano-gap electrodes or molecular arrays and its application to nano-device. However, it is not appropriate for the fabrication of sub-5 nm features and high-aspect-ratio nanostructures due to the limitation of EBL resolution. In this study, the precision assembly and alignment of DNA molecule was demonstrated using sub-5 nm nanostructures formed by a combination of conventional electron-beam lithography (EBL) and plasma ashing processes. The ma-N2401 (EBL-negative tone resist) nanostructures were patterned by EBL process at a dose of $200\;{\mu}C/cm2$ with 25 kV and then were ashed by a chemical dry etcher at microwave (${\mu}W$) power of 50 W. We confirmed that this method was useful for sub-5 nm patterning of high-aspect-ratio nanostructures. In addition, we also utilized the surface-patterning technique to create the molecular pattern comprised 3-(aminopropyl) triethoxysilane (APS) as adhesion layer and octadecyltrichlorosilane (OTS) as passivation layer. DNA-templated gold nanoparticle chain was attached only on the sub-5 nm APS region defined by the amine groups, but not on surface of the OTS region. We were able to obtain DNA molecules aligned selectively on a SiO2/Si substrate using atomic force microscopy (AFM).