• ETRI Journal
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• v.45 no.1
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• pp.171-179
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• 2023

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13㎛-0.16㎛ to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.11
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• pp.1637-1642
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• 2010

In this paper, we present the fabrication of a high-quality diffractive-lens mold having submicron patterns, which is suitable for an ultra-slim optical system. In order to fabricate high-quality diffractive lens with a variety of submicron patterns, the multi-alignment method was used; high-resolution electron-beam lithography and FAB plasma etching were carried out to obtain the patterns. The most important key technology in the multi-alignment method is to reduce alignment error, lithography error, and etching error. In this paper, these major fabrication errors were minimized, and a high-quality diffractive lens with a diameter of $267\;{\mu}m$ (NA = 0.25), minimum pattern width of 226 nm, and thickness of 819 nm was successfully fabricated.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.456-460
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• 1999

Experimental studies of laser micromachining on Mo diaphragm using piezo Q-switched Nd:YAZ laser have been performed. Application of miniaturized micorcolumn electron gun arrays as a potential electron beam lithography or portable mini-scanning electron microscope (SEM) application have recently extensively examined. The conventional microcolumn fabrication technique would give a limitation on the minimization of aberration, In this paper, we obtained 20~30 $\mu \textrm m$aperture of laser micromachining on Mo diaphragm using piezo Q-swithed Nd:YAG laser. The geometrical figures, such as the diameter and the preciseness of the drilled aperture are dependent upon the total energy of the laser pulse train, laser pulse width, and the diameter of laser spot in addition to the materials-dependent parameters.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.78-78
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• 1999

Experimental studies of laser micromachining on Mo metal using piezo Q-switched Nd:YAG laser have been performed. Miniaturized microcolumn electron gun arrays as a potential electron beam lithography or portable mini-scanning electron microscope application have recently extensively examined. For these purpose, the electro-static electron lens and deflector system called microcolumn has to be assembled. The conventional microcolumn fabrication technique would gave a limitation on the minimization of aberration. The current technique of a 1 $\mu$m misalignment would lead to ~1.3 nm coma. In order to reduce aberration, assembling the microcolumn component followed by laser drilling should be very beneficial. In this report, we will address the preliminary report of laser micromachining on Mo substrate using piezo Q-switched Nd:YAG laser. The geometrical figures, such as the diameter and the depth of the frilled aperture are dependent upon the total energy of the laser pulse train, laser pulsewidth, and the diameter of laser beam in addition to the materials-dependent parameters.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.23-30
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• 1999

We experimented on the sub 50nm patterning using E-beam lithography system. SAL601 negative E-beam resist was used for this experiment. In order to utilize the maximum ability of E-beam system, firstly, we reduced the PR thickness to 100nm, and the field size to 200 ${um}m$. Then PEB (Post Expose Bake) time/temperature, which is one of the very important factors when SAL601 is used, were reduced for minimum line width. In addition, digitizing is optimized for better results. Quantum wire and quantum dot which can be used for nanoscale memory device, such as single electron memory device, are fabricated using these developed lithography techniques.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.155-156
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• 2010

• Proceedings of the Optical Society of Korea Conference
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• 1991.07a
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• pp.41-46
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• 1991

A block quantized binary phase hologram is introduced for optical interconnection and encoded with a simulated alogorithm to achieve high diffraction efficiency and superession of unwanted spots. The block quantized binary phase holograms encoded with the algorithm are fabricated with electron beam lithography and chemical etching. the fabricated holograms showed excellent perfoemances for optical interconnection.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.102-102
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• 2003

• Journal of the Korean Society for Precision Engineering
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• v.29 no.10
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• pp.1144-1148
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• 2012

Process conditions for generating nano patterns handle different process according to the pattern characteristics, and different process data according to patterns in questions. To efficiently find optimal process conditions for generating nano patterns, process data by experiment is needed consideration of the pattern characteristics concerning the equipment. In particular, coating methods of a cylindrical mold differ from it of a flat plate because of viscosity of coating materials. Also the coating thickness affects nano process and pattern line width. So coating method of coating thickness for cylindrical mold is very important on nano pattern generating. In this study, a method is proposed for coating Photo Resist through the spray in order to coat cylindrical mold and measuring the thickness of coating using measuring tip considering the size of cylindrical mold because there is no method in the existing SEM. The proposed method is applied to a real printed electronics system to verify its accuracy and efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.291-291
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• 2010

Electron-beam lithography (EBL) process is a versatile tool for a fabrication of nanostructures, nano-gap electrodes or molecular arrays and its application to nano-device. However, it is not appropriate for the fabrication of sub-5 nm features and high-aspect-ratio nanostructures due to the limitation of EBL resolution. In this study, the precision assembly and alignment of DNA molecule was demonstrated using sub-5 nm nanostructures formed by a combination of conventional electron-beam lithography (EBL) and plasma ashing processes. The ma-N2401 (EBL-negative tone resist) nanostructures were patterned by EBL process at a dose of $200\;{\mu}C/cm2$ with 25 kV and then were ashed by a chemical dry etcher at microwave (${\mu}W$) power of 50 W. We confirmed that this method was useful for sub-5 nm patterning of high-aspect-ratio nanostructures. In addition, we also utilized the surface-patterning technique to create the molecular pattern comprised 3-(aminopropyl) triethoxysilane (APS) as adhesion layer and octadecyltrichlorosilane (OTS) as passivation layer. DNA-templated gold nanoparticle chain was attached only on the sub-5 nm APS region defined by the amine groups, but not on surface of the OTS region. We were able to obtain DNA molecules aligned selectively on a SiO2/Si substrate using atomic force microscopy (AFM).