• 조명전기설비학회논문지
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• 제19권4호
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• pp.1-8
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• 2005

본 연구에서는 2차원적 유체 모델을 통하여 보다 실질적인 플라즈마를 이해하고자 하였으며, 기하학적인 방전전극 구조를 반영하도록 전극단에서 챔버 외벽의 거리를 변화시키면서 플라즈마의 특성을 정량적으로 비교 분석하고자 하였다. 방전 챔버의 구조로서, 전극의 반경과 방전 챔버의 높이는 일정하게 유지하면서 방전 챔버의 넓이를 변화시킴에 따라 형성되는 플라즈마의 특성을 분석하였다. 그 결과, 전극단과 챔버 외벽의 거리가 짧을수록 그 영역에서 전계가 강하게 형성되어, 외벽을 향하는 각 입자들의 움직임도 매우 활발하다는 것을 알 수 있었다. 또한, 전각단과 외벽과의 거리가 짧을수록 전극 면상에서 형성되는 입자들의 수밀도와 유속의 변화가 일정하게 형성되는 것을 알 수 있었다. 이러한 결과는 웨이퍼의 대구경화에 따른 플라즈마의 균일성을 고려할 경우에 매우 효과적일 것으로 고려되어 진다.

• Transactions on Electrical and Electronic Materials
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• 제14권4호
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• pp.221-224
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• 2013

Effects of ambient temperature on the ac electrical treeing and breakdown behaviors in an epoxy/layered silicate (1 wt%) were carried out in needle-plate electrode geometry. A layered silicate was exfoliated in an epoxy base resin,, using our ac electric field apparatus. To measure the treeing initiation and propagation, and the breakdown rate, constant alternating current (ac) of 10 kV (60 Hz) was applied to the specimen in a needle-plate electrode arrangement, at $30^{\circ}C$, $90^{\circ}C$ or $130^{\circ}C$ of insulating oil bath. At $30^{\circ}C$, the treeing initiation time and the breakdown time in the epoxy/layered silicate (1 wt%) system were 1.4 times higher than those of the neat epoxy resin. At $90^{\circ}C$ (lower than Tg), electrical treeing was initiated in 55 min, and propagated until 1,390 min at the speed of $0.35{\times}10^{-3}mm/min$, which was 4.4 times higher than that at $30^{\circ}C$; however, there was almost no further treeing propagation after 1,390 min. At $130^{\circ}C$ (higher than Tg), electrical treeing was initiated in 44 min, and propagated until 2,000 min at the speed of $0.96{\times}10^{-3}mm/min$. Typical branch type electrical treeing was obtained from the neat epoxy and epoxy/layered silicate at $30^{\circ}C$, while bush type treeing was observed out from the needle tip at $90^{\circ}C$ and $130^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.308-311
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• 2013

The effect of an electric field on the ac electrical treeing in various epoxy/reactive diluent systems was studied in a needle-plate electrode geometry. Diglycidyl ether of bisphenol A (DGEBA) type epoxy was used as a base resin, and 1,4-butanediol diglycidyl ether (BDGE) or polyglycol (PG) as a reactive diluent was introduced to the DGEBA system, in order to decrease the viscosity of the DGEBA epoxy system. BDGE was acted as a chain extender, and PG acted as a flexibilizer, after the curing reaction. To measure the treeing initiation time and the propagation rate, three constant alternating currents (ac) of 10, 13 and 15 kV/4.2 mm (60 Hz) were applied to the specimen, in a needle-plate electrode arrangement, at $30^{\circ}C$ of insulating oil bath. When 10 kV/4.2 mm (60 Hz) was applied, the treeing initiation time and the propagation rate in the DGEBA system were 356 min and $1.10{\times}10^{-3}$ mm/min, respectively, those in the DGEBA/BDGE system were 150 min and $1.14{\times}10^{-3}$ mm/min, respectively. Those in the DGEBA/PG system were 469 min and $1.05{\times}10^{-3}$ mm/min, respectively. As 15 kV/4.2 mm (60 Hz) was applied, the propagation rate in the DGEBA system was $5.41{\times}10^{-3}$ mm/min, and that in the DGEBA/PG system was $1.42{\times}10^{-3}$ mm/min. These values meant that PG could be used as a reactive diluent in the DGEBA system, without the deterioration of the insulation breakdown property.

• 조명전기설비학회논문지
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• 제24권1호
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• pp.124-129
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• 2010

페놀수지가 그 표면에 흐르는 누설전류에 의하여 탄화되는 경우 탄화패턴은 페놀수지의 탄화특성을 결정하는 가장 중요한 인자 중의 하나이다. 그러나 전형적인 페놀수지의 탄화패턴은 매우 복잡하기 때문에 종래의 유클리드 기하학을 이용하여 해석하는 것은 어려운 일이다. 이와 같이 복잡한 형태는 대부분의 경우 프랙탈 구조를 나타낸다. 따라서 주어진 페놀수지에 대한 탄화패턴의 특성을 프랙탈 해석으로 규명할 수 있다. 본 논문에서는 누설전류에 의하여 탄화된 페놀수지의 탄화패턴을 정량적으로 조사하기 위하여 누설전류의 크기와 전극간격의 함수로서 탄화패턴의 프랙탈 차원을 계산하였다. 계산의 신뢰성을 위하여 박스 카운팅 방법뿐만 아니라 상관함수를 이용하여 프랙탈 차원을 구하였다. 계산 결과에 따르면 전극간격을 일정하게 유지한 상태에서 전류가 증가하면 프랙탈 차원은 증가하였다. 반면, 전류가 일정할 때 전극간격과 프랙탈 차원 사이에는 큰 관련성이 없었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권1호
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• pp.66-77
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• 2010

Improvement in breakdown voltage ($BV_{ds}$) and speed of the device are the key issues among the researchers for enhancing the performance of HEMT. Increased speed of the device aspires for shortened gate length ($L_g$), but due to lithographic limitation, shortening $L_g$ below sub-micrometer requires the inclusion of various metal-insulator geometries like T-gate onto the conventional architecture. It has been observed that the speed of the device can be enhanced by minimizing the effect of upper gate electrode on device characteristics, whereas increase in the $BV_{ds}$ of the device can be achieved by considering the finite effect of the upper gate electrode. Further, improvement in $BV_{ds}$ can be obtained by applying field plates, especially at the drain side. The important parameters affecting $BV_{ds}$ and cut-off frequency ($f_T$) of the device are the length, thickness, position and shape of metal-insulator geometry. In this context, intensive simulation work with analytical analysis has been carried out to study the effect of variation in length, thickness and position of the insulator under the gate for various metal-insulator gate geometries like T-gate, $\Gamma$-gate, Step-gate etc., to anticipate superior device performance in conventional HEMT structure.

• 산업기술연구
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• 제18권
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• pp.249-258
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• 1998

In this paper, we investigated the post-combustion removal of nitrogen oxide($NO_x$) and sulfur oxide($SO_x$) which is based on the gas to particle conversion process by the pulsed corona discharge. Under normal pressure, the pulsed corona discharge produces the energetic free electrons which dissociate gas molecules to form the active radicals. These radicals cause the chemical reactions that convert $SO_x$ and $NO_x$ into acid mists and these mists react with $NH_3$ to form solid particles. Those particles can be removed from the gas stream by conventional devices such as electrostatic precipitator or bag filter. The reactor geometry was coaxial with an inner wire discharge electrode and an outer ground electrode wrapped on a glass tube. The simulated flue gas with $SO_x$ and $NO_x$ was used in the experiment. The corona discharge reactor was more efficient in removing $SO_x$ and $NO_x$ by adding $NH_3$ and $H_2O$ in the gas stream. We also measured the removal efficiency of $SO_x$ and $NO_x$ in a cylinder type corona discharge reactor and obtained more than 90 % of removal efficiency in these experimental conditions. The effects of process variables such as the inlet concentrations of $SO_x$, $NH_3$ and $H_2O$, residence time, pulse frequencies and applied voltages were investigated.

• 한국재료학회지
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• 제9권11호
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• pp.1075-1082
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• 1999

50/50 vol% LSM-YSZ의 복합공기극(LSM=$\textrm{La}_{1-x}\textrm{Sr}_{x}\textrm{MnO}_{3}$(0$\leq$x$\leq$0.5))이 콜로이드 증착법에 의해 준비으며 주사전자현미경과 임피던스 분석기에 의해 연구되어졌다. 재현성있는 임피던스 스펙트럼들이 LSM-YSZ/YSZ/LSM-YSZ로 구성된 향상된 셀을 사용함으로써 얻어졌다. 이러한 셀들의 임피던스 스펙트럼들은 작동온도에 강하게 영향을 받았으며, 가장 안정된 조건은 $900^{\circ}C$에서 도달되어졌다. $900^{\circ}C$에서 공기//공기 셀에 대해 측정된 전형적인 임피던스 스펙트럼들은 2개의 불완전한 호(depressed arc)로 구성되었다. LSM전극에 대한 YSZ의 첨가는 LSM-YSZ 공기극의 저항 감소를 가져왔으며, 전해질 표면의 불순물의 영향을 제거하기 위한 연마는 공기극 저항을 더욱 감소시켰다. 또한 촉매층(Ni 혹은 Sr)을 가진 LSM-YSZ 전극은 촉매층이 없는 경우에 비해 공기극 저항의 감소를 가져왔다. LSM-YSZ 공기극 저항은 전극조성, 전해질의 형태, 인가 전류에 의해 영향을 받았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.371.2-371.2
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• 2016

Graphene electronics is one of the promising technologies for the next generation electronic devices due to the outstanding properties such as conductivity, high carrier mobility, mechanical, and optical properties along with extended applications using 2 dimensional heterostructures. However, large contact resistance between metal and graphene is one of the major obstacles for commercial application of graphene electronics. In order to achieve low contact resistance, numerous researches have been conducted such as gentle plasma treatment, ultraviolet ozone (UVO) treatment, annealing treatment, and one-dimensional graphene edge contact. In this report, we suggest a fabrication method of one-dimensional graphene metal edge contact without using graphene exfoliation. Graphene is grown on Cu foil by low pressure chemical vapor deposition. Then, the graphene is transferred on $SiO_2/Si$ wafer. The patterning of graphene channel and metal electrode is done by photolithography. $O_2$ plasma is applied to etch out the exposed graphene and then Ti/Au is deposited. As a result, the one-dimensional edge contact geometry is built between metal and graphene. The contact resistance of the fabricated one-dimensional metal-graphene edge contact is compared with the contact resistance of vertically stacked conventional metal-graphene contact.

• 대한의용생체공학회:의공학회지
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• 제30권4호
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• pp.279-287
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• 2009

Magnetic resonance electrical impedance tomography (MREIT) is a new medical imaging modality providing cross-sectional images of a conductivity distribution inside an electrically conducting object. MREIT has rapidly progressed in its theory, algorithm and experimental technique and now reached the stage of in vivo animal and human experiments. Conductivity image reconstructions in MREIT require various steps of carefully implemented numerical computations. To facilitate MREIT research, there is a pressing need for an MREIT software package with an efficient user interface. In this paper, we present an example of such a software, called CoReHA which stands for conductivity reconstructor using harmonic algorithms. It offers various computational tools including preprocessing of MREIT data, identification of boundary geometry, electrode modeling, meshing and implementation of the finite element method. Conductivity image reconstruction methods based on the harmonic $B_z$ algorithm are used to produce cross-sectional conductivity images. After summarizing basics of MREIT theory and experimental method, we describe technical details of each data processing task for conductivity image reconstructions. We pay attention to pitfalls and cautions in their numerical implementations. The presented software will be useful to researchers in the field of MREIT for simulation as well as experimental studies.

• 한국전기전자재료학회논문지
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• 제19권4호
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• pp.373-378
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• 2006

We report on plasma damage free-sputtering technologies for organic light emitting diodes (OLEDs), organic thin film transistor (OTFT) and flexible displays by using a box cathode sputtering (BCS) method. Specially designed BCS system has two facing targets generating high magnetic fields ideally entering and leaving the targets, perpendicularly. This target geometry allows the formation of high-density plasma between targets and enables us to realize plasma damage free sputtering on organic layer without protection layer against plasma. The OLED with Al cathode prepared by BCS shows electrical and optical characteristics comparable to OLED with thermally evaporated Mg-Ag cathode. It was found that OLED with Al cathode layer prepared by BCS has much lower leakage current density ($1{\times}10^{-5}\;mA/cm^2$ at -6 V) than that $(1{\times}10^{-2}{\sim}-10^0\;mA/cm^2)$ of OLED prepared by conventional DC sputtering system. This indicates that BCS technique is a promising electrode deposition method for substituting conventional thermal evaporation and DC/RF sputtering in fabrication process of organic based optoelectronics.