• 대한화학회지
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• 제7권2호
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• pp.182-185
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• 1963

In the previous paper of the series of researches on the graphitic properties of anthracites, authors have already reported the results on the electrical specific resistance measurements for Korean anthracites in order to develope a simple methods which differentiate graphite from anthracite. In this paper, the X-ray diffraction method and oxidation have been applied and compared with the results which were obtained by the specific resistance measurements in the previous paper. It has been confirmed that there is a parallel relation between the value of specific resistance measurement and height of hexagonal peak by X-ray diffraction, but the color reaction due to graphitic acid by oxidation does not show any definite critical points between graphite and anthracite.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.314.1-314.1
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• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.11-17
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• 1999

Aging characteristics of the crosslinked polyethylene have been measured after applying electrical, thermal and combined stresses. ICP and FT-IR measurements confirmed diffusion of low molecular weight components such as antioxidant and presence of carbonyl group. Carbonyl group of aged crosslinked polyethylene under combined stress was detected by FT-IR. As deterioration of the crosslinked polyethylene progresses, crystallinity degree and density decrease. Also, dielectric properties have been measured by tan $\delta$ and $\varepsilon$$_{r}$ measurements. The three-parameter Weibull distribution was found to be the best suited among other probabilistic distribution representing the dielectric breakdown strength of aged crosslinked polyethylene. The scale parameter and location parameter decreases as the applied stress increases. The shape parameter increases as the stress increases.s.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 추계학술대회 논문집 학회본부 C
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• pp.422-424
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.81-85
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• 1990

$WSi_{x}$ film deposited on p+ polysilicon by low pressure chemical vapor deposition method were annealed by rapid thermal process, their properties have been investigated by measurements of electrical resistivity and Hall voltage and by analyses of phases and microstructure using X-ray diffraction and SEM technique. The electrical resistivity of the polycides consisting of the tungsten silicide and the p+ polysilicon decreases with the increase in annealing temperature due probably to the increase in grain size. unlike the polycides consisting of the $WSi_{x}$ and n+ polysilicon, however, the Hall voltage of the polycides consisting of $WSi_{x}$ and p+ polysilicon were positive for all specimens annealed as well as the as-deposited one, indicating the majority carrier in $WSi_{x}$. is hole and is independent of the annealing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.344.1-344.1
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• 2016

Recently, graphene has shown great characteristic of electrical conductivity, strength, and elasticity. However, due to edge unstable and metallic properties, it is difficult to use as a semiconductor devices. The solution of such problems has been sought a way to use the boron nitride in a stacked layer structure. By graphene and boron nitride stacked layer structure on silicon substrate, the electron mobility is improved and deteriorated results in semiconductor properties. In this study, to make layered structure, we developed direct synthesis method for graphene on boron nitride. By using Raman technique, the directly stacked layer structure is in good agreement with measurements on each of the attributes.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.153-158
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• 2016

The elastic material constants, stiffness constants ($c_{11}$, $c_{12}$, and $c_{44}$), are three unique coefficients that establish the relation between stress and strain. Accurate knowledge of mechanical properties and the stiffness coefficients for silicon is required for design of Micro-Electro-Mechanical Systems (MEMS) devices for proper modeling of stress and strain in electronic packaging. In this work, the stiffness coefficients for silicon as a function of temperature from $-150^{\circ}C$ to $+25^{\circ}C$ have been extracted by using the experimental measurements of Poisson's ratio (${\nu}$) of silicon in several directions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.298-301
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• 1997

This paper describes the thermally stimulated current(TSC) measurements arachidic acid(AA) and polyamic acid alkylamine salts(PAAS) LB film, which is a precursor of polyimide(PI). The measurements were performed from room temperature to about 250$^{\circ}C$ and the temperature was increased at a rate of 0.02 $^{\circ}C$/s linearly[4]. It shows that peaks of TSC are observed at about 80$^{\circ}C$ in the arachidic acid and about 80$^{\circ}C$, 160$^{\circ}C$ in the PAAS LB films. The DSC and TGA of PAAS, arachidic acid are measure. Monolayer phases on the water subphase such as Langmuir(L) films and the phase transitions from gas phase to solid phase via liquid phase are observed using Brewster angle microscopy(BAM). BAM is also used to observe the Langemuir-Blodgett(LB) films.