Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 2000.11c
- /
- Pages.422-424
- /
- 2000
Emission Properties of ZnO Grown by PLD
PLD로 증착한 ZnO 박막의 발광 특성 분석
- Bae, Sang-Hyuck (Department of Electrical and Electronic Engineering, Yonsei University) ;
- Lee, Sang-Yeol (Department of Electrical and Electronic Engineering, Yonsei University)
- Published : 2000.11.25
Abstract
ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).
Keywords