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http://dx.doi.org/10.4313/JKEM.2003.16.1.065

Characteristics Investigation of ZnO-Si-ZnO Multi-layer Thin Films Fabricated by Pulsed Laser Deposition  

강홍성 (연세대학교 전기전자공학과)
강정석 (연세대학교 전기전자공학과)
심은섭 (연세대학교 전기전자공학과)
방성식 (연세대학교 전기전자공학과)
이상렬 (연세대학교 전기전자공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.1, 2003 , pp. 65-69 More about this Journal
Abstract
ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements
Keywords
ZnO-Si-ZnO multi-layer thin films; PLD; PL; XRD;
Citations & Related Records
Times Cited By KSCI : 4  (Citation Analysis)
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