• The Transactions of the Korean Institute of Electrical Engineers P
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• v.65 no.4
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• pp.335-339
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• 2016

Output power in photovoltaic systems changes steeply with the change of the sun intensity. The change of output power has influence on the electric power quality of the system. This paper proposes a residential distributed generation system using photovoltaic power generation and polymer electrolyte fuel cells(hybrid systems). In order to level the output power which changes steeply the polymer electrolyte fuel cells are connected to the photovoltaic power generation system in parallel. Thus the generated power of all the system can be leveled. However, the steep generated power in the photovoltaic power generation system can not be leveled. Therefore, the electric double layer capacitor(EDLC) is connected in parallel with the hybrid systems. It is confirmed by the simulation that the proposed distributed generation system is available for a residential supply.

• Journal of IKEEE
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• v.27 no.4
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• pp.418-424
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• 2023

In this study, we examined the effects of annealing on electrical characteristics of double-gated silicon nanosheet (SiNS) feedback field effect transistors (FBFETs). When bias stresses were applied for 1000 s, the double-gated SiNS FBFETs were more affected by positive bias stresses than negative bias stresses regardless of the channel mode owing to the increase of interface traps caused by electrons in the inversion layers. After annealing at 300 ℃ for 10 mins, the devices were completely recovered to their original properties, and the characteristics did not change anymore when bias stresses were applied again for 1000 s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.345-346
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• 2008

We have studied an emission spectra of top-emssion organic light-emitting diodes(TEOLED) due to a change of cathode and organic layer thickness. Device structure is Al(100nm)/TPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/cathode. And two different types of cathode were used; one is LiF(0.5nm)/Al(25nm) and the other is LiF(0.5nm)/Al(2nm)/Ag(30nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layer was kept to be about 2:3. Al and Al/Ag double layer cathode devices show that the emission spectra were changed from 490nm to 560nm and from 490nm to 560nm, respectively, when the total organic layer increase. Full width at half maximum was changed from 67nm to 49nm and from 90nm to 35nm as the organic layer thickness increases. All devices show that view angle dependent emission spectra show a blue shift. Blue shift is strong when the organic layer thickness is more than 140nm. Devece with Al/Ag double layer cathode is more vivid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.112-116
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• 2001

Organic Electroluminescence device, which have the single-layer structure of ITO(indium-tin-oxide)/MEH-PPV (Poly[2-(2'-ethylhexyloxy )-5-methoxy-1,4-pheny lenevinylene])/Al(aluminium) and ITO/MEH-PPV/$Alq_3$(tris-8-hydroxyquinolinato aluminium)/Al were fabricated and electrical properties were investigated. Experimental results, in single-layer structure, shown that turn on voltage is about 12 V, and current density increases as a function of increasing temperature. It was explained by thermionic emission. In double-layer structure, thickness $200\AA$ of $Alq_3$ is shown electrical properties that turn on voltage is about 11 V, and current density decreases as a function of increasing temperature.ࠀȀ 耀Ѐ€

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.112-116
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• 2001

Organic Electroluminescence device, which have the single-layer structure of ITO(indium-tin-oxide)/MEH-PPV (Poly [2-(2'-ethylhexyloxy)-5-methoxy-1, 4-phenylenevinylene])/Al(aluminium) and ITO/MEH-PPV/Alq$_3$(tris-8-hydroxyquinolinato aluminium)/Al were fabricated and electrical properties were investigated. Experimental results, in single-layer structure, shown that alum on voltage is about 12 V, and current density increases as a function of increasing temperature. It was explained by thermionic emission. In double-layer structure, thickness 200 $\AA$ of Alq$_3$ is shown electrical properties that turn on voltage is about 11V, and current density decreases as a function of increasing temperature.

• Transactions of the Society of Information Storage Systems
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• v.3 no.4
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• pp.160-166
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• 2007

In this paper, the measured electrical resistance method is proposed to analyze the ramp-tab contact during the load/unload (L/UL) process. Since this method supplies the voltage change due to the resistance change, we can easily and conveniently identify the ramp-tab contact from the acoustic emission (AE) signal. At first, we carefully deposit the conductive material on the surface of the conventional ramp by sputtering method. The ratio frequency (RF) magnetron co-sputtering system is applied to accomplish the deposited double-layers on the ramp surface. One layer is the stainless steel for the conductive layer and the other is the titanium layer for the cohesive function between the ramp surface and the stainless steel layer. In order to guarantee the stiffness and damping properties of the original ramp, the deposited conductive layer is intended to have very thin thickness. After integration the proposed ramp device into the L/UL system and networking the electrical resistance circuit, the L/UL performance is experimentally evaluated by comparing the measured electrical resistance signal and AE signal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.32-35
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• 2002

The work focuses on the development of a Cu lead-frame with a single-sided adhesive tape for cost reduction and reliability improvement of LOC (lead on chip) package products, which are widely used for the plastic-encapsulation of memory chips. Most of memory chips are assembled by the LOC packaging process where the top surface of the chip is directly attached to the area of the lead-frame with a double-sided adhesive tape. However, since the lower adhesive layer of the double-sided adhesive tape reveals the disparity in the coefficient of thermal expansion from the silicon chip by more than 20 times, it often causes thermal displacement-induced damage of the IC pattern on the active chip surface during the reliability test. So, in order to solve these problems, in the resent work, the double-sided adhesive tape is replaced by a single-sided adhesive tape. The single-sided adhesive tape does net include the lower adhesive layer but instead, uses adhesive materials, which are filled in clear holes of the base film, just for the attachment of the lead-frame to the top surface of the memory chip. Since thermal expansion of the adhesive materials can be accommodated by the base film, memory product packaged using the lead-flame with the single-sided adhesive tape is shown to have much improved reliability. Author allied this invention to the Korea Patent Office for a patent (4-2000-00097-9).

• Journal of Information Display
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• v.9 no.2
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• pp.5-8
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• 2008

Bottom gate thin film transistors (TFTs) with microcrystalline and amorphous Si (a-Si) double active layers (DAL) were fabricated. Since the process of DAL TFTs can use that of conventional a-Si TFTs, these DAL TFT process has advantages, such as low cost, large substrate, and mass production capacity. In order to analyze the degradation characteristics in saturation region for driving TFTs of active matrix organic light emitting diode, three different dynamic stresses were applied to DAL TFTs and a-Si TFTs. The threshold voltage shift of DAL TFTs and a-Si TFTs during 10,000 second stress is 0.3V and 2V, respectively. DAL TFTs were more reliable than a-Si TFTs.

• Progress in Superconductivity and Cryogenics
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• v.12 no.4
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• pp.31-35
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• 2010

In superconducting magnet applications, winding methods of the superconducting magnet can be classified into a layer winding and a pancake winding. The superconducting magnet using high temperature superconductor (HTS) with rectangular shape is generally fabricated using the pancake winding method. On the other hand, low temperature superconducting (LTS) magnet may be wound by either a pancake winding or a layer winding. Compared with the layer winding, the pancake winding method has a merit of easy replacement of a damaged pancake module, but it also has a demerit of requirement of splicing between each double pancake modules. In this paper, we investigated characteristics of the layer and pancake winding methods using HTS. Six samples were wound out of BSCCO and Coated Conductors (CCs) by two winding methods and their characteristics were experimentally observed.

• Journal of Advanced Navigation Technology
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• v.19 no.5
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• pp.433-439
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• 2015

Recently, Interest in power the quality was increased because of increasing the use of sensitive load equipment into an electrical disturbance such as computer, Electricity, Electronics, Telecommunications and semiconductor device. In addition, To enhance power quality, the instantaneous voltage drop occurred in precision load equipment is a need for proper compensation. In order to solve the problem, The developed dynamic voltage restorer (DVR) using an electric double layer capacitor (EDLC) has been applied. In this paper, We will do study to apply hybrid capacitors that have high energy density to the same size compared to the EDLC to DVR. Also, As a emergency luminaires of emergency power supply that we can support more than 10 years of life was confirmed the applicability of hybrid capacitor.