• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.2
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• pp.72-78
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• 2001

A compact size high voltage pulse generator with nanosecond rise time has been designed and investigated experimentally. The inductance of a pulse generator can be reduced by fixing the Marx generator and pulse forming network components into a single cylindrical unit. As a result, nanosecond rise time about $8{\sim}10[ns]$ and pulse width of several hundred [ns] can be obtained from a modified Marx pulse generator. And parametric studies showed that the rise time of the output pulse was depended little on the change of the load resistance and the charging capacitance while, the pulse width of the output pulse was depended greatly upon the change of the load resistance and the charging capacitance. The theoretical showed the possibility to design the laboratory-size pulse generator very fast rising time and a proper pulse width by minimizing stray inductance and varying resistance and capacitance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.137-140
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• 1998

An active-matrix LCD using thin film transistors (TFT) has been widely recognized as having potential for high-quality color flat-panel displays. Pixel-Design Array Simulation Tool (PDAST) was used to profoundly understand the gate si후미 distortion and pixel charging capability. which are the most critical limiting factors for high-quality TFT-LCDs. Since PDAST can simulate the gate, data and pixel voltages of a certain pixel on TFT array at any time and at any location on an array, the effect of the resistivity of gate line material on the pixel operations can be effectively analyzed. The gate signal delay, pixel charging ratio and level-shift of the pixel voltage were simulated with varying the parameters. The information obtained from this study could be utilized to design the larger area and finer image quality panel.

• The Transactions of the Korean Institute of Electrical Engineers A
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• v.53 no.7
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• pp.397-404
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• 2004

This paper describes a study of transient characteristics in 765kV untransposed transmission lines. As the 765(kV) system can carry bulk power, some severe fault on the system nay cause large system disturbance. The large shunt capacitance and small resistance of 765kv transmission line make various difficulties for its protection. These problems including current difference between sending and receiving terminals on normal power flow, low order harmonic current component in fault current and current transformer saturation due to the long DC time constant of the circuit etc. must be investigated and solved. The analysis of transient characteristics at sending terminal has been carried out for the single phase to ground fault and 3-phase short fault, etc. The load current, charging current in normal condition and line flows, fault current, THD(Total Harmonic Distortion) of harmonics, time constants have been analysed for the 765kV untransposed transmission line systems.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2508-2511
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• 1999

A non-contact battery charger which transfers energy using magnetic field without any electrical contacts is designed using half-bridge series resonant converter. This converter utilizes series resonance to reduce the undesirable effect of large leakage inductance of the non-contact transformer and ZVS operation can reduce switching losses. In this paper. analysis and design procedure of half-bridge series resonant converter with non-contact transformer is presented. Input voltage is 85VAC ${\sim}$ 270VAC, output voltage and current is 4.1V and 800mA, respectively. Furthermore, a method for calculating the secondary current of the transformer to control battery charging current in constant current charging mode which is required for litium-ion battery is proposed and the performance is verified from experiments.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2000.11a
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• pp.70-76
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• 2000

In the charge system, a contact type-convenient-charging method is insufficient because of the contact failure around moist environment and troublesome question to put in and pull out. For the solution of this problem, an electromagnetically coupled non-contact charger for the rechargeable cell is proposed using ZVS multi-resonant forward converter with synchronous rectifier. In this paper coupling coefficient(k), leaking inductance, coupling inductance and resonant frequency are observed for the air gap. By using the observed value, this circuit is designed and implemented. This proposed circuit is simulated by the PSPICE and experimented. The stress of a main switch and the output power are measured.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.255-258
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• 2008

In this paper, the battery charging device using DMFC(Direct Methanol Fuel Cell) for electric bicycle is proposed. In the proposed system, phase-shift full-bridge converter is used as a battery charger by boosting the 12V DMFC output voltage up to 36V. By using the phase-shift technique, the ringing of the transformer is reduced and the efficiency of the converter can be improved. The operation modes of proposed phase-shift full-bridge converter is analyzed and verified by the simulation and the experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.417-422
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• 2001

The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.85-89
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• 1999

FDE panel was successfully fabricated through the integration of a 0.7" diagonal Si-based Mo-tip FEA with 25${\times}$25 pixels, Y2O3:Eu or ZnO:Zn phosphor screen, and vacuum sealing through an exhausting glass tube, including a getter. The panel system was driven by an external driver circuit having pulse width modulation(PWM) driving scheme. Before character imaging, it was stabilized through tip aging by slowly increasing a pulse-mode emission current and phosphor aging by a coulombic charging process. After aging, luminescent characteristics such as emission uniformity, charging and arcing phenomena were shown to be improved significantly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.435-438
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• 1998

In this paper, Electret is formed to range voltage -5[kV] to -8[kV] by corona charging in PTFE film and sensor is manufactured by method of moments in sensing infra sonic. Charges of charged film are calculated also TSC measurement and induced potential of sensing electrode according to the charges is become aware of computer simulation. Electret Infra Sonic Transducer, which is designed and manufactured according to the potential and electric field simulation in using method of moments, is proved as it is effectively. Because sensitivity that measured under 10[Hz] is that average value of sensitivity rising rate is 6.34 [dB/oct] as average value is $\pm$1 [dB/oct] range -5[kV] to -8[kV] in corona charging film. As a result, it is believed that characteristic of acquired transducer can be application of medical treatment, industry, and animal life researches and the study of noise elimination, what's more, is required.