• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.232.1-232.1
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• 2013

본 연구에서는 asymmetric과 symmetric 구조의 n채널 MOSFET 소자의 성능 평가에 관한 실험을 진행하였다. 소자의 성능 평가에 있어 아날로그 회로에서의 DC 이득은 중요한 파라미터 중 하나 이다. 따라서 본 연구에서는 gm/ID 측정법을 이용하여 각 소자의 DC 이득 특성을 분석하였다. 게이트 전압에 따른 드레인 전류-드레인 전압 특성 곡선으로부터 early voltage 값을 추출하였다. 이후 최종적으로 수치적 계산을 통해 DC 이득 값을 추출하였다. 실험 결과 asymmetric과 symmetric 소자의 경우 early voltage 값이 각각 -34 V와 -15 V였으며 따라서 DC 이득 특성 또한 asymmetric 소자의 경우가 우수한 것을 확인하였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.773-776
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• 2014

In this work, analog performances of silicon nanowire MOSFET with different length and channel width have been measured. The channel widths are 20nm, 30nm, 80nm, 130nm and lengths are 250nm, 300nm, 350nm, 500nm. temperatures $30^{\circ}C$, $50^{\circ}C$, $75^{\circ}C$, $100^{\circ}C$ have been measured. The trans-conductance, early voltage, gain, drain current and mobility have been characterized as a function of temperature. The mobility has been enhanced with wider channel width but it has been reduced with longer length and higher temperature. The trans-conductance has been increased with wider channel width. The early voltage has been enhanced with increase of gate length and temperature but it has been reduced with wider width. Therefore, gain has been enhanced with increase of gate longer length and wider width but it has been reduced with higher temperature.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.2
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• pp.6-11
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• 2000

In this paper, suggesting a new linearly -graded depletion edge approximation, the current-voltage characteristics of an n-type short-channel GaAs MESFET device has been analyzed by solving the two dimensional Poisson's equation in the depletion region. In this model, the expressions for the threshold voltage, the source and the drain ohmic resistance, and the drain current were derived. As a result, typical Early effect of a short channel device was shown and the ohmic voltage drop by source and drain contact resistances could be explained. Furthermore our model could analyze both the short-channel device and the long-channel device in a unified manner.

• Proceedings of the Korea Concrete Institute Conference
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• 1994.10a
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• pp.393-398
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• 1994

Roller compacted concrete(RCC) has been attracted due to its growing application to pavement concrete construction. In this study optimum mixing formation of RCC was explored and characterized its properties forcusing on reducing try and error for actual application to construction of pavement. The concrete used for roller compacted concrete pavement (RCCP) has very low water content per unit volume, so that it develops early high strength. This high early strength development makes pavement constructed open early. This concrete also showed very reduced crack formed on the surface because of expensive cement.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.1
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• pp.25-32
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• 2005

In this paper, it is attempted to provide a unified explanation for typical short channel GaAs MESFET’s and SOI-structured Si JFET's behaviors such as: i) drain voltage-induced threshold voltage roll-off, ii) finite output ac resistance beyond the saturation, and iii) weak dependence of the drain saturation current on the channel length. Replacing the conventional GCA with a new assumption that is suggested in order to include the longitudinal field variation, and taking into account the channel current continuity and the field-dependent mobility, we can derive the two-dimensional potential in both depletion region and undepleted conducting channel. Obtained expressions for the threshold voltage and the drain current will be considerably accurate over the entire operating region. Moreover, in comparison with the conventional channel length shortening models, our model seems to be more reasonable in explaining the Early effect.

• Applied Chemistry for Engineering
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• v.32 no.4
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• pp.461-466
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• 2021

In this article, a portable and cost-effective voltammetric biosensor with nanoparticles was developed for the measurements of heterogeneous nuclear ribonucleoprotein A1 protein (hnRNP A1) biomarker which can potentially be used for lung cancer diagnosis. Gold nanoparticles were first electrodeposited onto screen printed carbon electrode (SPCE) followed by immobilizing a single stranded DNA aptamer specific to hnRNP A1 onto the electrode surface. Ethanolamine was also used when immobilizing DNA aptamer on the surface to prevent signals from non-specific adsorption events. Sequential injection of hnRNP A1 biomarker and anti-hnRNP A1 conjugated with alkaline phosphatase (ALP) onto the aptamer chip surface allows to form the sandwich complex of DNA aptamer/hnRNP A1/ALP-anti-hnRNP A1 on the electrode surface which further reacted with 4-aminophenyl phosphate (APP). The electrocatalytic reaction of the enzyme, ALP, and the substrate, APP, resulting in the oxidative current response changes at -0.05 and -0.17 V (vs. Ag/AgCl) against the hnRNP A1 concentration was measured using cyclic and differential pulse voltammetry, respectively. The Au nanoparticles-integrated voltammetric biosensor was applied to analyze human normal serum solutions possibly suggesting potential applicability for lung cancer diagnosis.

• Journal of Embryo Transfer
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• v.21 no.1
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• pp.35-43
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• 2006

Ions play important roles in various cellular processes including fertilization and differentiation. However, it is little known whether how ions are regulated during early embryonic development in mammalian animals. In this study, we examined changes in $Ca^{2+}\;and\;K^+$ concentrations in embryos and oviduct during mouse early embryonic development using patch clamp technique and confocal laser scanning microscopy. The intracellular calcium concentration in each stage embryos did not markedly change. At 56h afier hCG injection when 8-cell embryos could be Isolated from oviduct, $K^+$ concentration in oviduct increased by 26% compared with that at 14h after injection of hCG During early embryonic development, membrane potential was depolarized (from -38 mV to -16 mV), and $Ca^{2+}$ currents decreased, indicating that some $K^+$ channel might control membrane potential in oocytes. To record the changes in membrane potential induced by influx of $Ca^{2+}$ in mouse oocytes, we applied 5 mM $Ca^{2+}$ to the bath solution. The membrane potential transiently hyperpolarized and then recovered. In order to classify $K^+$ channels that cause hyperpolarization, we first applied TEA and apamin, general $K^+$ channel blockers, to the bath solution. Interestingly, the hyperpolarization of membrane potential still appeared in oocytes pretreated with TEA and apamin. This result suggest that the $K^+$ channel that induces hyperpolarization could belong to another $K^+$ channel such as two-pore domain $K^+(K_{2P})$channel that a.e insensitive to TEA and apamin. From these results, we suggest that the changes in $Ca^{2+}\;and\;K^+$ concentrations play a critical role in cell proliferation, differentiation and reproduction as well as early embryonic development, and $K_{2P}$ channels could be involved in regulation of membrane potential in ovulated oocytes.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.21-28
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• 2007

In this paper, in order to derive the two-dimensional field effect of n-InAlAs/InGaAs HEMTs, we suggested analytical model by solving the two-dimensional Poisson's equation in both InAlAs and InGaAs regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing within the quantum well shaped channel. Derived expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the threshold voltage decreases as drain voltage increases. Compared with the conventional model, the present model may offer more reasonable explanation for the drain-induced threshold voltage roll-off, the Early effect, and the channel length modulation effect. Furthermore, it is expected that the proposed model would provide more reasonable theoretical basis for analyzing various long and short channel InAlAs/InGaAs HEMT devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.21-28
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• 2008

In this paper, we suggest an analytical model that can derive the I-V characteristics in the saturation region of a short channel GaAs MESFET. Instead of the pinch-off concept that has been used in the conventional models we can derive the two-dimensional potential in the depletion region in order that the velocity saturation region cannot be pinched-off and the current continuity condition can be satisfied. Obtained expression for the velocity saturation length is expressed in terms of the total channel length, channel doping density, gate voltage, and drain voltage. Compared with the conventional channel length shortening models, the present model seems to be considerably accurate and more reasonable in explaining the Early effect.

• The Bulletin of The Korean Astronomical Society
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• v.37 no.1
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• pp.70.1-70.1
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• 2012

CQUEAN (Camera for QUasars in EArly uNiverse)은 초기우주천체 연구단(Center for Exploration of Origin of the Universe) 사업에서 개발한 CCD 카메라로서 초기우주의 퀘이사 후보를 찾기 위한 목적으로 설계되었다. CCD를 구동할 때는 픽셀 다이오드의 PN 접합층에 공핍층(depletion layer)을 생성하기위해 역 바이어스 전압을 준다. 이 전압에 의해 CCD를 사용한 관측 시 광이온화와 열이온화 현상에 의해 생성된 전자의 전하값에 추가로 바이어스 값이 읽혀진다. 정확한 CCD 측광 결과를 얻어내기 위해서는 안정된 바이어스를 유지해야 한다. 본 연구에서는 향후 CQUEAN의 보다 정확한 관측 및 데이터 처리에 대비하여 CQUEAN의 바이어스 특성을 분석하여 이 값에 영향을 주는 요인을 찾고 해결책을 논의한다.