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An analytical modeling for the two-dimensional field effect of a short channel GaAs MESFET and SOI-structured Si JFET  

Choi Jin-Wook (Dept. of Electrical and Electronic Eng., Hongik University)
Ji Soon-Koo (Dept. of Electrical and Electronic Eng., Hongik University)
Choi Soo-Hong (Dept. of Electrical and Electronic Eng., Hongik University)
Suh Chung-Ha (Dept. of Electrical and Electronic Eng., Hongik University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.1, 2005 , pp. 25-32 More about this Journal
Abstract
In this paper, it is attempted to provide a unified explanation for typical short channel GaAs MESFET’s and SOI-structured Si JFET's behaviors such as: i) drain voltage-induced threshold voltage roll-off, ii) finite output ac resistance beyond the saturation, and iii) weak dependence of the drain saturation current on the channel length. Replacing the conventional GCA with a new assumption that is suggested in order to include the longitudinal field variation, and taking into account the channel current continuity and the field-dependent mobility, we can derive the two-dimensional potential in both depletion region and undepleted conducting channel. Obtained expressions for the threshold voltage and the drain current will be considerably accurate over the entire operating region. Moreover, in comparison with the conventional channel length shortening models, our model seems to be more reasonable in explaining the Early effect.
Keywords
short channel GaAs MESFET;
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