• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.35-39
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• 2016

Extreme Ultraviolet Lithography (EUVL) is the most promising technique in the field of Next Generation Lithography (NGL) expected to be used in the 1x-nm node for High Volume Manufacturing (HVM). But there exits remaining challenges for proper defect control of EUV mask. It was considered development of EUV pellicle for protecting the EUV mask has many obstacles due to high extinction coefficient of EUV wavelength. Recently researchers in the industry of semiconductor argue about the necessity of EUV pellicle and make effort to achieve it. In this paper, we investigated that the relationship between imaging performance and transmittance of EUV pellicle quantitatively. We made in-house EUV pellicle and analyzed its imaging performance of the dependence of pellicle transmittance using Coherent Scattering Microscopy(CSM). The imaging performance of EUV mask with pellicle is affected by its transmittance and we found that the performance of EUV mask improved with higher transmittance pellicle.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.17-21
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• 2016

EUV (Extreme Ultraviolet) pellicle which protects a mask from contamination became a critical issue for the application of EUV lithography to high-volume manufacturing. However, researches of EUV pellicle are still delayed due to no typical manufacturing methods for large-scale EUV pellicle. In this study, EUV pellicle membrane manufacturing method using not only KOH (potassium hydroxide) wet etching process but also a water bath was suggested for uniform etchant temperature distribution. KOH wet etching rates according to KOH solution concentration and solution temperature were confirmed and proper etch condition was selected. After KOH wet etching condition was set, $5cm{\times}5cm$ SiNx (silicon nitride) pellicle membrane with 80% EUV transmittance was successfully manufactured. Transmittance results showed the feasibility of wet etching method with water bath as a large-scale EUV pellicle manufacturing method.

• Journal of the Semiconductor & Display Technology
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• v.15 no.1
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• pp.22-26
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• 2016

Extreme ultraviolet (EUV) pellicle is one of the most concerned research in the field of EUV lithography (EUVL). Imaging performance of EUV mask with pellicle should be investigated prior to high volume manufacturing (HVM) of EUVL. In this paper, we analyzed the relationship between standoff distance and imaging performance of EUV mask to verify the influences of relative standoff distance on imaging performance. As a result, standoff distance of EUV pellicle has no effect on imaging performance of EUV mask such as critical dimension (CD), normalized image log slope (NILS) and image contrast. Therefore, pellicle support structure can be flexibly designed and modified in diverse ways to complement the thermal limitation of EUV pellicle membrane.

• Atmosphere
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• v.21 no.1
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• pp.123-130
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• 2011

In this study, we have analyzed the radiative characteristics of erythemal ultraviolet-B (EUV-B from 1999 to 2005) over the Korean Peninsula. EUV-B measured at Gangneung, Anmyondo, Mokpo, and Gosan represents the measurements from clean areas and that at Seoul represents from a polluted area. The magnitudes of EUV-B increase in proportion to the latitudinal decrease. Monthly mean variation of EUV-B at noon shows the maximum value of $158.5mWm^{-2}$ in August and the minimum value of $36.4mWm^{-2}$ in December in the clean areas. Seasonal mean diurnal variation of EUV-B shows a peak around noon (12:00 ~ 13:00 hr) and its intensity varies along with a season in order of summer > spring > fall > winter. The maximum value of $56.4mWm^{-2}$ in summer is three times higher than that in winter ($14.3mWm^{-2}$). The value of EUV-B in the polluted area is lower than that in the clean areas, resulting from the effects of the blocking, reflection, and scattering of EUV-B due to high concentrations of PM10. UV-B is an essential element to synthesize vitamin D in human body. 200 IU(International Unite) of vitamin D can be formed by an exposure of 6-10% of body surface area to 0.5 MED(Minimal Erythemal Dose). In order to form vitamin D, the calculated exposure times to EUV-B are 15 min. in spring, 12 min. in summer, 18 min. in fall, and 37 min. in winter for the clean areas and 16, 16, 24, and 37 min. for the polluted area.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2092-2094
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• 2000

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.41.1-41.1
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• 2021

We generate solar magnetograms and EUV images from Galileo sunspot drawings using a deep learning model based on conditional generative adversarial networks. We train the model using pairs of sunspot drawing from Mount Wilson Observatory (MWO) and their corresponding magnetogram (or UV/EUV images) from 2011 to 2015 except for every June and December by the SDO (Solar Dynamic Observatory) satellite. We evaluate the model by comparing pairs of actual magnetogram (or UV/EUV images) and the corresponding AI-generated one in June and December. Our results show that bipolar structures of the AI-generated magnetograms are consistent with those of the original ones and their unsigned magnetic fluxes (or intensities) are well consistent with those of the original ones. Applying this model to the Galileo sunspot drawings in 1612, we generate HMI-like magnetograms and AIA-like EUV images of the sunspots. We hope that the EUV intensities can be used for estimating solar EUV irradiance at long-term historical times.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.60.2-60.2
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• 2021

In this study, we determinate the differential emission measure(DEM) of solar corona using three SDO/AIA EUV channel images and three AI-generated ones. To generate the AI-generated images, we apply a deep learning model based on multi-layer perceptrons by assuming that all pixels in solar EUV images are independent of one another. For the input data, we use three SDO/AIA EUV channels (171, 193, and 211). For the target data, we use other three SDO/AIA EUV channels (94, 131, and 335). We train the model using 358 pairs of SDO/AIA EUV images at every 00:00 UT in 2011. We use SDO/AIA pixels within 1.2 solar radii to consider not only the solar disk but also above the limb. We apply our model to several brightening patches and loops in SDO/AIA images for the determination of DEMs. Our main results from this study are as follows. First, our model successfully generates three solar EUV channel images using the other three channel images. Second, the noises in the AI-generated EUV channel images are greatly reduced compared to the original target ones. Third, the estimated DEMs using three SDO/AIA images and three AI-generated ones are similar to those using three SDO/AIA images and three stacked (50 frames) ones. These results imply that our deep learning model is able to analyze temperature response functions of SDO/AIA channel images, showing a sufficient possibility that AI-generated data can be used for multi-wavelength studies of various scientific fields. SDO: Solar Dynamics Observatory AIA: Atmospheric Imaging Assembly EUV: Extreme Ultra Violet DEM: Diffrential Emission Measure

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.7-11
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• 2015

In order to protect the patterned mask from contamination during lithography process, pellicle has become a critical component for Extreme Ultraviolet (EUV) lithography technology. According to EUV pellicle requirements, the pellicle should have high EUV transmittance and robust mechanical property. In this study, silicon nitride, which is well-known for its remarkable mechanical property, was used as a pellicle membrane material to achieve high EUV transmittance. Since long silicon wet etching process time aggravates notching effect causing stress concentration on the edge or corner of etched structure, the remaining membrane is prone to fracture at the end of etch process. To overcome this notching effect and attain high transmittance, we began preparing a rather thick (200 nm) $SiN_x$ membrane which can be stably manufactured and was thinned into 43 nm thickness with HF wet etching process. The measured EUV transmittance shows similar values to the simulated result. Therefore, the result shows possibilities of HF thinning processes for $SiN_x$ EUV pellicle fabrication.

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.106-107
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• 2002

Extreme ultraviolet (EUV) radiation of wavelength $\lambda$~10 nm or photon energy hv~100 eV is presently a blank region in the electromagnetic spectrum where applications are concerned. This is because no powerful sources were available until when intense-laser-produced plasmas are available. Both a new laboratory-sized source of EUV radiation and its new applications in lithography of semiconductor devices have been developed. (omitted)

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.115-116
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• 2008