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Imaging Performance of the Dependence of EUV Pellicle Transmittance  

Woo, Dong Gon (Department of Materials Science and Engineering)
Kim, Jung Hwan (Department of Materials Science and Engineering)
Kim, Jung Sik (Department of Nanoscale Semiconductor Engineering)
Hong, Seoungchul (Department of Materials Science and Engineering)
Ahn, Jinho (Department of Materials Science and Engineering)
Publication Information
Journal of the Semiconductor & Display Technology / v.15, no.3, 2016 , pp. 35-39 More about this Journal
Abstract
Extreme Ultraviolet Lithography (EUVL) is the most promising technique in the field of Next Generation Lithography (NGL) expected to be used in the 1x-nm node for High Volume Manufacturing (HVM). But there exits remaining challenges for proper defect control of EUV mask. It was considered development of EUV pellicle for protecting the EUV mask has many obstacles due to high extinction coefficient of EUV wavelength. Recently researchers in the industry of semiconductor argue about the necessity of EUV pellicle and make effort to achieve it. In this paper, we investigated that the relationship between imaging performance and transmittance of EUV pellicle quantitatively. We made in-house EUV pellicle and analyzed its imaging performance of the dependence of pellicle transmittance using Coherent Scattering Microscopy(CSM). The imaging performance of EUV mask with pellicle is affected by its transmittance and we found that the performance of EUV mask improved with higher transmittance pellicle.
Keywords
EUVL; coherent scattering microscopy (CSM); pellicle; critical dimension (CD); normalized image log slope (NILS); image contrast;
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