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Evaluation on the Relationship between Mask Imaging Performance and Standoff Distance of EUV Pellicle  

Woo, Dong Gon (Department of Materials Science and Engineering, Hanyang University)
Hong, Seongchul (Department of Materials Science and Engineering, Hanyang University)
Kim, Jung Sik (Department of Nanoscale Semiconductor Engineering, Hanyang University)
Cho, Hanku (Institute of Nano Science and Technology)
Ahn, Jinho (Department of Materials Science and Engineering, Hanyang University)
Publication Information
Journal of the Semiconductor & Display Technology / v.15, no.1, 2016 , pp. 22-26 More about this Journal
Abstract
Extreme ultraviolet (EUV) pellicle is one of the most concerned research in the field of EUV lithography (EUVL). Imaging performance of EUV mask with pellicle should be investigated prior to high volume manufacturing (HVM) of EUVL. In this paper, we analyzed the relationship between standoff distance and imaging performance of EUV mask to verify the influences of relative standoff distance on imaging performance. As a result, standoff distance of EUV pellicle has no effect on imaging performance of EUV mask such as critical dimension (CD), normalized image log slope (NILS) and image contrast. Therefore, pellicle support structure can be flexibly designed and modified in diverse ways to complement the thermal limitation of EUV pellicle membrane.
Keywords
EUVL; EUV pellicle; coherent scattering microscopy (CSM); standoff distance; imaging performance;
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