• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.6
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• pp.601-607
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• 2015

A set of novel silicon controlled rectifier (SCR) devices' characteristics have been analyzed and verified under the electrostatic discharge (ESD) stress. A ring-shaped diffusion was added to their anode or cathode in order to improve the holding voltage (Vh) of SCR structure by creating new current discharging path and decreasing the emitter injection efficiency (${\gamma}$) of parasitic Bipolar Junction Transistor (BJT). ESD current density distribution imitated by 2-dimensional (2D) TCAD simulation demonstrated that an additional current path exists in the proposed SCR. All the related devices were investigated and characterized based on transmission line pulse (TLP) test system in a standard $0.5-{\mu}m$ 24 V CDMOS process. The proposed SCR devices with ring-shaped anode (RASCR) and ring-shaped cathode (RCSCR) own higher Vh than that of Simple SCR (S_SCR). Especially, the Vh of RCSCR has been raised above 33 V. What's more, their holding current is kept over 800 mA, which makes it possible to design power clamp with SCR structure for on chip ESD protection and keep the protected chip away from latch-up risk.

• The Korean Journal of Nuclear Medicine Technology
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• v.15 no.2
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• pp.88-93
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• 2011

Purpose: As to analytical method of data, the AutoQUANT software in which it is used quantitative rating of the myocardial perfusion SPECT are reported that there is a difference. Therefore the measured value error of the mutual program is expected to be generated even if the quantitative analysis is made data of the same patient. The purpose of this study is to offer the comparative analysis of myocardial extract method in Quantitative Perfusion SPECT. Materials and methods: We analyzed the 51 patients who were examined by Tc-99m MIBI gated myocardial SPECT in nuclear medicine department of Pusan National University Hospital from June to December 2010(34 men, 17 women, mean age $66.5{\pm}9.9$). We acquired the extracted image in myocardial extract protocol. QPS program that uses the AutoQUANT software measured TID(Transient Ischemic Dilation), ESD(Extent of Stress Defect), SSS(Summed Stress Score). Then analyzed the results. Results: The correlation of appyling myocardial extract is TID(r=0.98), ESD(r=0.99), SSS(r=0.99). In the 95% confidence limit, there was no satistically significant difference(TID p=0.78, ESD p=0.31, SSS p=0.19). After blinding test with a physician for making a qualitative analysis, there was no difference. Conclusion: Quantitative indices in QPS program showed good correlation and the results showed no statistically signigicant difference. The variance between method was small. therefore, the functional parameters by each method can be used interchangeably. Also, we expect patient's satisfaction.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.495-502
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• 2014

Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.1-6
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• 2006

Hot carrier degradation and roll off characteristics of threshold voltage ($V_{t1}$) on NMOSFETs as I/O transistor are studied as a function of Lightly Doped Drain (LDD) structures. Pocket dose and the combination of Phosphorus (P) and Arsenic (As) dose are applied to control $V_{t1}$ roll off down to the $10\%$ gate length margin. It was seen that the relationship between $V_{t1}$ roll off characteristic and substrate current depends on P dopant dose. For the first time, we found that the n-p-n transistor triggering voltage ($V_{t1}$) depends on drain current, and both $I_{t2}$ and snapback holding voltage ($V_{sp}$) depend on the substrate current by characterization with a transmission line pulse generator. Also it was found that the improved lifetime for hot carrier stress could be obtained by controlling the P dose as loosing the $V_{t1}$ roll off margin. This study suggests that the trade-off characteristic between gate length margin and channel hot carrier (CHC) lifetime in NMOSFETs should be determined by considering Electrostatic Discharge (ESD) characteristic.

• Journal of the Society of Naval Architects of Korea
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• v.49 no.4
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• pp.350-358
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• 2012

This paper deals with accuracy of accumulated fatigue damage estimation using stochastic fatigue analysis method based on Rayleigh PDF. From full scale measurement data on an 8100TEU container vessel, zero-order spectral moments for wave- and vibration-induced energy spectral densities are determined on the probability level of 99%. 80 simulation cases in total are prepared according to the variation of ratio of zero-order spectral moments and center frequency of vibration ESD. By using inverse Fourier transformation and rainflow cycle counting for the combined ESD of wave and vibration, exact fatigue damages are derived. Fatigue damages in frequency domain based on Rayleigh PDF show large conservativeness compared to exact fatigue damages in times domain. The main cause of the excessive conservativeness is analyzed by two aspects: ratio of zero crossing and peak frequencies and ratio of initial zero order spectral moments and zero order spectral moments from rainflow stress range distributions. Finally, a guideline of applicability of Rayleigh PDF is proposed for wide band processes.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2011.03a
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• pp.58-58
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• 2011

CNT 나노기술을 응용한 IT산업용 적층간지용 ESD(정전방전, Electrostatic Dissipation)PU 발포필름의 제조 가공기술 및 상품화 개발은 전자제품 패키지에 요구되는 쿠션성과 정전방전 기능을 갖는 폴리우레탄 발포 필름의 제조기술을 확립함으로써 가능 할 수 있다. 특히 IT산업용 필름제품이 개발되면 ESD 성능을 발휘하게 됨으로서 정전기 쇼크에 의한 각종 전자제품의 오작동이나 파손 방지가 가능하게 되어 포장재, 자동차, 전자제품의 하우징 등으로 사용될 수 있게 된다. 현재까지 ESD 기능을 부여하기 위해서 사용되는 충전재로는 금속섬유, 금속플레이크, 탄소섬유, 카본블랙 등이 있으며, 최근 탄소나노튜브를 응용한 연구가 많이 진행되고 있는데 탄소나노튜브는 직경이 수십nm, 종횡비 1000이상의 나노섬유형태로 서 전기전도성이 구리수준으로 알려져 있고 소량을 충전할 시 기계적 특성도 오히려 증대하는 장점을 가지고 있으며 전기적 특성으로는 상대적으로 낮은 나노튜브 함량에서는 ESD를 들 수 있고 높은 함량에서는 전자파 차폐성까지 기대되고 있다. 본 연구에서는 우수한 인장강도, 기계적 강도, 열적 안정성, 내약품성을 가지면서 습식 또는 용융공정을 통해 용이하게 시트, 필름, 코팅제를 제조할 수 있는 방수, 투습방수성을 가지는 유연재료인 폴리우레탄(PU) 1액형 PU에 MWNT 함량이 3wt%인 IPA/MWNT 분산용액을 PU 함량 대비 20, 30, 40파트로 함유시켜 $120^{\circ}C$에서 2분 건조시켜 제조한 그라운드 필름에 2액형 PU와 IPA/MWNT 분산용액에 발포제를 첨가하여 발포온도 140, 150, $160^{\circ}C$에서 5분간 건조시켜 시료 필름을 제조하였다. 제조된 필름의 전기전도성 측정은 부피저항과, 표면저항을 각각 측정하여 확인하였으며, 필름의 마찰 대전압은 E.S.T-7 마찰 대전압 시험기를 이용하여 표면 마찰 대전압과 반감기를 측정하여 확인하고, 필름의 물리적 특성은 인장시험기를 이용하여 breaking stress, breaking strain을 구하였다. 필름의 표면 특성은 영상 현미경 시스템을 사용하여 ${\times}1000$ 배율로 측정하여 분산특성과의 연관성을 확인하였다.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.391-392
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• 2008

A SPICE-based 3-dimensional circuit model of Light-Emitting Diode(LED) was modified include the reverse breakdown properties. The new model is found to be accurate to study the failure mechanisms of LEDs under electrostatic discharge (ESD) and electronic overstress (EOS). It was found that the permanent damages under heavy reverse stress is mainly due to the high electric field strength in P-GaN layer.

• Proceedings of the Korean Society of Dyers and Finishers Conference
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• 2012.03a
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• pp.63-63
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• 2012

전자제품 패키지에 요구되는 쿠션성과 정전방전 기능을 갖는 폴리우레탄 발포 필름의 제조기술을 확립하게 되면 IT산업용에 적용 가능한 필름제품이 개발되어 ESD(정전방전, Electrostatic Dissipation) 성능을 발휘하게 됨으로서 정전기 쇼크에 의한 각종 전자제품의 오작동이나 파손 방지가 가능하게 되어 포장재, 자동차 전자제품의 하우징 등으로 사용될 수 있게 된다. 전도성 고분자인 Polyaniline (PANI)은 다른 여러 고분자와 비교하여 볼 때 다른 유형의 전도성 고분자보다 합성하기가 쉽고 높은 전기전도도를 보임은 물론 열적 및 대기 안정성이 우수하며 가격이 저렴한 장점을 가지고 있다. 본연구는 CNT 나노기술을 응용한 IT산업용 적층간지용 ESD PU발포필름의 제조 가공기술 및 상품화 개발을 수행하고자 방수, 투습방수성을 가지는 유연재료인 폴리우레탄(PU)의 1액형 PU와 DMF에 PANI의 함량을 5, 10, 15, 20, 25, 30wt%로 변화시켜 제조한 PANI/DMF 분산용액과 IPA/MWNT 3wt% 분산용액의 혼용비에 변화를 주어 $120^{\circ}C$에서 2분 건조시켜 그라운드 필름을 제조하였다. 그리고 2액형 PU와 IPA/MWNT 3wt% 분산용액과 발포제를 사용하여 발포온도 $150^{\circ}C$에서 5분간 건조시켜 발포필름을 제조하였으며 이들의 전기적 특성과 역학적 특성을 조사하였다. 제조된 필름의 전기전도성은 전기저항측정기 KEITHLEY 8009를 사용하여 부피저항과, 표면저항을 각각 측정하여 확인하였으며, 필름의 마찰 대전압은 E.S.T-7 마찰 대전압 시험기를 이용하여 표면 마찰 대전압을 측정하여 확인하고, 필름의 물리적 특성은 인장시험기를 이용하여 breaking stress, breaking strain을 측정하였다. 필름단면의 CNT 발포특성은 주사전자현미경(SEM)을 사용하여 측정하여 발포특성과 물성과의 연관성을 확인하였다. 그 결과 필름의 전기적 특성은 PANI가 30% 함량일 때 전반적으로 낮은 저항값이 측정되었으며, 마찰대전압을 측정한 결과 대부분의 시료가 0에 가까운 낮은 값을 가졌다. 필름의 물리적 인장특성은 PANI가 10wt%의 함량일 때 가장 높은 절단강도를 가졌으며 분산용액의 혼용비에 따른 경향성은 나타나지 않았다. 필름의 단면형상을 확인하여 발포특성을 분석한 결과 PANI의 함량에 따라 발포 cell의 크기는 뚜렷한 경향성을 보이지 않았으나 30wt%의 PANI/DMF 분산용액 20part(gr)와 3wt% IPA/MWNT 분산용액 40part(gr)로 제조한 시료의 cell이 가장 균일하고 고르게 발포되었으며, 3.90E+06ohm으로 가장 낮은 표면저항 값으로 측정되어 가장 좋은 전기전도성을 가짐을 확인하였다.