• Journal of KIISE:Information Networking
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• v.28 no.4
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• pp.641-650
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• 2001

In recent years, e-Commerce is very active on the Internet, especially the World Wide Web along with the popularization of Internet using high-speed networks. Especially, Electronic Software Distribution(ESD) is widely being focused as one of the popular researches. However, the existing models of ESD lack substantial illegal copy protection or copyright protection as they have the shortcomings of guaranteeing anonymity of users. This study suggests an ESD protocol that guarantees substantial copyright protection and anonymity based on the Public Key Infrastrncture(PKl). The suggested method does not give the information of a buyer who doesn't want to reveal to a seller, and protects illegal copy and distribution as well. When it happens that illegal copies are in circulation, this method provides a device to trace back its original distributor so that it helps protect the copyright. In addition, it provides more convenient environment to the user by not using the methods of serial number input and extra installation to use.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.28 no.6
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• pp.1297-1307
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• 2018

The rise of Online game ESD(Electronic Software Distribution) like Steam, the method of game piracy are more diversified. In Online Game ESD, Software DRM is applied to game because we have to play in offline situation, but it is easily bypassed due to low security level. In this study, we analyze crack files of pirated games to learn how to bypass Steam DRM and to establish countermeasures for based on API call birthmark. The generated birthmark showed more than 85% resilience in representing crack groups and 95% credibility in detecting cracked games. With this study, it is possible to enhance the security of the online game Electronic Software Distribution platform, and to provide a high level of game piracy protection for indie game developers, especially those who can not purchase Third Party DRM to protect their own games.

• Transactions of the Korean Society of Automotive Engineers
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• v.21 no.2
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• pp.159-165
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• 2013

ESD damage by Charged Cable Model (CCM) is introduced. Due to its own impedance characteristic unlike Human Body Model (HBM) or Machine Model (MM) electric component can be destroyed even though it is located after typical protection circuit. Possible mechanism of ESD damage to automotive electric control unit (ECU) in vehicle environment by CCM discharge was investigated. Based on investigation, field-returned vehicle whose ECU is expected to be damaged by CCM discharge was tested to reproduce it and similar electric component destruction inside ECU was observed. Suggestions to reduce the possibility of ESD damage by CCM are introduced.

• Hwankyungkyoyuk
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• v.19 no.1 s.29
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• pp.1-13
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• 2006

This study was aimed to explore the level of awareness of Korean teachers and college students towards sustainable development(SD) and education for sustainable development(ESD). A survey was conducted to understand the present status of awareness of SD and ESD among 317 college students and 625 teachers in Korea from April to May of 2005. The questionnaire included items asking whether they heard about terms such as sustainability or sustainable development, the source of information on SD, the level of understanding or the urgent task for SD in Korea. It also included questions about experiences in participating in or conducting ESD, the need for ESD, important areas in and the modality for ESD and the willingness to participate in ESD. The results showed that the level of awareness on SD among teachers was low compared to college students, who have a relatively high level of access on SD issues through textbooks and classes in high school. Interestingly, most of college students replied that they never received any ESD, even though they learned SD in class. Both the teacher and student group thought that tile priority of sustainable development should be an 'environment-related' area in the social, economical and environmental perspectives. Most of the students and teachers considered the concept of SD as 'pursuing the balance between environmental protection and economic development.' Some of the teachers recognized the concept of sustainable development in the paradigm of continuous economic development. Both groups responded that the urgent task related to sustainable development is 'environmental protection' and the 'reduction of poverty.' On the other hand, they had experiences in teaching related to natural resources, gender equity, health, human rights, climate changes and other SD issues in class, but not under the name of ESD. They also emphasized 'critical thinking and problem solving & decision-making' in education. Most of the students and teachers responded that it was needed to carry out ESD, and that the way of life for SD would be the priority. It is suggested that various pedagogy and modalities according to various target groups should be considered in providing ESD. It is necessary to use more effective strategies for ESD rather than just introducing the concept of SD. Also, it is needed to review the ESD practices of teachers and improve the quality of education within the scope of ESD.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1372-1373
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• 2006

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latchup problem during normal operation. However, a modified NSCR_PPS device with proper junction/channel engineering demonstrates highly latchup immune current- voltage characteristics.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.9
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• pp.1858-1864
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• 2009

In this paper, we design a non-volatile memory IP, 1-kb one-time programmable (OTP) memory, used for power management ICs. Since a conventional OTP cell uses an isolated NMOS transistor as an antifuse, there is an advantage of it big cell size with the BCD process. We use, therefore, a PMOS transistor as an antifuse in lieu of the isolated NMOS transistor and minimize the cell size by optimizing the size of a OTP cell transistor. And we add an ESD protection circuit to the OTP core circuit to prevent an arbitrary cell from being programmed by a high voltage between the terminals of the PMOS antifuse when the ESD test is done. Furthermore, we propose a method of turning on a PMOS pull-up transistor of high impedance to eliminate a gate coupling noise in reading a non-programmed cell. The layout size of the designed 1-kb PMOS-type antifuse OTP IP with Dongbu's $0.18{\mu}m$ BCD is $129.93{\times}452.26{\mu}m^2$.

• Journal of Power Electronics
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• v.12 no.6
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• pp.947-953
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• 2012

The latch-up immunity of the high voltage power clamps used in high voltage ESD protection devices is very becoming important in high-voltage applications. In this paper, a stacking structure with a high holding voltage and a high failure current is proposed and successfully verified in 0.18um CMOS and 0.35um BCD technology to achieve the desired holding voltage and the acceptable failure current. The experimental results show that the holding voltage of the stacking structure can be larger than the operation voltage of high-voltage applications. Changes in the characteristics of the stacking structure under high temperature conditions (300K-500K) are also investigated.

• Journal of IKEEE
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• v.26 no.2
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• pp.196-204
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• 2022

Electrostatic discharge (ESD) protection devices of P-type embedded silicon-controlled rectifier (PESCR) structure were analyzed for high-voltage operating input/output (I/O) applications. Conventional PESCR standard device exhibits typical SCR characteristics with very low-snapback holding voltages, resulting in latch-up problems during normal operation. However, the modified device with the counter pocket source (CPS) surrounding N⁺ source region and partially formed P-well (PPW) structures proposed in this study could improve latch-up immunity by indicating high on-resistance and snapback holding voltage.

• Journal of IKEEE
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• v.13 no.1
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• pp.87-93
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• 2009

The paper introduces a silicon controlled rectifier (SCR)-based device with high holding voltage for ESD power clamp. The holding voltage can be increased by extending a p+ cathode to the first n-well and adding second n-well wrapping around n+ cathode. The increase of the holding voltage above the supply voltage enables latch-up immune normal operation. In this study, the proposed device has been simulated using synopsys TCAD simulator for electrical characteristic, temperature characteristic, and ESD robustness. In the simulation result, the proposed device has holding voltage of 3.6V and trigger voltage of 10.5V. And it is confirmed that the device could have holding voltage of above 4V with the size variation of extended p+ cathode and additional n-well.

• Journal of Satellite, Information and Communications
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• v.8 no.4
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• pp.124-129
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• 2013

An electrostatic discharge (ESD) protection device, so called, N-type SCR with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications. A conventional NSCR_PPS device shows typical SCR-like characteristics with extremely low snapback holding voltage, which may cause latch-up problem during normal operation. However, a modified NSCR_PPS device with counter pocket source(CPS) and partial p-type well(PPW) structure demonstrates highly latch-up immune current-voltage characteristics.