• Journal of Auto-vehicle Safety Association
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• v.14 no.2
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• pp.75-82
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• 2022

Automated vehicles (AVs) are coming to our roadways. In practice, there are still several challenges that can impede the AV sensors are polluted on various road conditions. In this paper, we propose a strategy for V2E performance assurance technology using Kano model. We are developing the vehicle sensor cleaning system about the three types of commonly used sensors: camera, radar, and LiDAR. Surveys were carried out in 30 AV's experts on quality characteristics about V2E performance assurance technology. As a result, the Kano model developed to verify a major requirement of autonomous vehicle's sensor cleaning system. It is expected that the Kano model will be actively used to verify the importance of V2E development strategy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.47-52
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• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.211-220
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• 1998

The stochiometric composition of $AgGaS_2$polycrystal source materials for the single crystal thin films were prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns, it was found that the polycrystal $AgGaS_2$has tetragonal structure of which lattice constant $a_0\;and \;c_0$ were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$single crystal thin film was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5 $mu \textrm{m}$/h. The crystallinity of the grown single crystal thin films was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by${\Alpha};=;8.695{\times}10^{-4};eV/K,and;{\beta};=;332;K$. from the photocurrent spectra by illumination of polarized light of the $AgGaS_2$single crystal thin film, we have found that crystal field splitting $\Delta$Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of applied mathematics & informatics
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• v.27 no.5_6
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• pp.1157-1163
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• 2009

Let G be a graph with vertex set V(G) and let f be a nonnegative integer-valued function defined on V(G). A spanning subgraph F of G is called a fractional f-factor if $d^h_G$(x)=f(x) for all x $\in$ for all x $\in$ V (G), where $d^h_G$ (x) = ${\Sigma}_{e{\in}E_x}$ h(e) is the fractional degree of x $\in$ V(F) with $E_x$ = {e : e = xy $\in$ E|G|}. In this paper it is proved that if ${\delta}(G){\geq}{\frac{b^2(k-1)}{a}},\;n>\frac{(a+b)(k(a+b)-2)}{a}$ and $|N_G(x_1){\cup}N_G(x_2){\cup}{\cdots}{\cup}N_G(x_k)|{\geq}\frac{bn}{a+b}$ for any independent subset ${x_1,x_2,...,x_k}$ of V(G), then G has a fractional f-factor. Where k $\geq$ 2 be a positive integer not larger than the independence number of G, a and b are integers such that 1 $\leq$ a $\leq$ f(x) $\leq$ b for every x $\in$ V(G). Furthermore, we show that the result is best possible in some sense.

• BMB Reports
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• v.29 no.3
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• pp.210-214
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• 1996

The pH dependence of the kinetic parameters of mutant O-acetylserine sulfhydrylase (OASS) from Salmonella typhimurium LT-2 has been determined in order to obtain information on the chemical mechanism. The initial velocity pattern obtained by varying the concentrations of OAS at several fixed concentrations of TNB, shows an intersection on the left of the ordinate at pH 7.0, indicating that the kinetic mechanism is a sequential mechanism in which substrate inhibition by OAS is observed while the wild type enzyme showed a ping pong mechanism. The values of $V/E_t$, $V/K_{OAS}E_{t}$ and $V/K_{TNB}E_{t}$ decreased by about 68%, 14% and 16% as compared with the wild type enzyme. The $V/K_{OAS}E_{t}$ is a pK of 6.5 on the acid side of the pH profile, and the $V/K_{TNB}$ is pH independent. As compared with the wild type enzyme, the pKs in the V/K profiles are shifted, reflecting that binding of the cofactor in free E:OAS is less asymmetric.

• Bulletin of the Korean Mathematical Society
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• v.49 no.3
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• pp.465-479
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• 2012

For $0<p{\leq}{\infty}$ and a convex body $K$ in $\mathbb{R}^n$, Lutwak, Yang and Zhang defined the concept of dual $L_p$-centroid body ${\Gamma}_{-p}K$ and $L_p$-John ellipsoid $E_pK$. In this paper, we prove the following two results: (i) For any origin-symmetric convex body $K$, there exist an ellipsoid $E$ and a parallelotope $P$ such that for $1{\leq}p{\leq}2$ and $0<q{\leq}{\infty}$, $E_qE{\supseteq}{\Gamma}_{-p}K{\supseteq}(nc_{n-2,p})^{-\frac{1}{p}}E_qP$ and $V(E)=V(K)=V(P)$; For $2{\leq}p{\leq}{\infty}$ and $0<q{\leq}{\infty}$, $2^{-1}{\omega_n}^{\frac{1}{n}}E_qE{\subseteq}{\Gamma}_{-p}K{\subseteq}{2\omega_n}^{-\frac{1}{n}}(nc_{n-2,p})^{-\frac{1}{p}}E_qP$ and $V(E)=V(K)=V(P)$. (ii) For any convex body $K$ whose John point is at the origin, there exists a simplex $T$ such that for $1{\leq}p{\leq}{\infty}$ and $0<q{\leq}{\infty}$, ${\alpha}n(nc_{n-2,p})^{-\frac{1}{p}}E_qT{\supseteq}{\Gamma}_{-p}K{\supseteq}(nc_{n-2,p})^{-\frac{1}{p}}E_qT$ and $V(K)=V(T)$.

• KSBB Journal
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• v.28 no.1
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• pp.54-59
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• 2013

Three isolates, E. faecium P1, P2 and P3, from intestinal drugs of three phamaceutical companies, four clinical vancomycin resistant isolates, E. faecium V1, V2, V3 and E. faecalis V4, and three isolates, E. faecalis DW01, DW07 and DW14, from infant feces were tested for the presence of virulence genes, ace, agg, esp, efaA, gelE, sprE, vanA and vanB as well as fsrABC, regulatory genes of gelE and sprE, cylMBA, cytolysin activation genes and cpd, cob and ccf, pheromone genes by PCR and for their phenotype activities such as protease, biofilm formation, cell clumping and hemolysis. The genes encoding cell surface adherence proteins, ace, agg, esp and efaA, were predominantly amplified from the vancomycin resistant strain V4 and the fecal isolates DW01, DW07 and DW14. Both protease and biofilm formation activity were detected only from E. faecalis V4 from which the PCR products of gelE and spreE as well as fsrABC were amplified. The pheromone genes were amplified from the V4, DW01, DW07 and DW14 strains and these strains showed clumping activity. Biofilm formation was observed from the strains DW01, DW07 and DW14, all of which produced PCR products of pheromone, and V4 as well. Whole cytolysin regulator genes were amplified from DW01, DW07 and DW14 and ${\beta}$-hemolysis activity was detected from these strains. Any virulence genes or activities except the pheomone gene ccf were not detected from the pharmaceutical isolates, E. faecium P1, P2 and P3.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.91-91
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• 2011

박막태양전지의 높은 효율개선을 위해 TCO층과 p-layer 사이에 buffer layer를 넣어 Voc와 FF를 개선하는 연구가 진행되고 있다. 이에 buffer layer의 활성화 정도를 높이기 위해 p-layer을 최적화 시키고자한다. 이 실험에서 a-Si:B에 N2O를 도핑시켜 Bandgap Energy 2.0 eV, Activation Energy 0.4 eV인 a-SiOx:B 막을 제작하여 buffer layer로 사용하였고 이 buffer layer에 의한 cell의 효율 향상을 최적화 하기위해 ASA simulation을 이용해 p-layer의 Bandgap Energy와 Activation Energy를 가변 하여 보았다. 실험결과 p-layer의 Bandgap Energy 1.95 eV에서 buffer layer와 p-layer사이에서의 barrier가 최소가 됨을 확인 할 수 있었고 Actication Energy 0.5 eV에서 가장 높은 Voc를 가짐을 알 수 있었다. 본 연구를 통해 p-layer의 Bandgap Energy 1.95 eV, Activation Energy 0.5 eV에서 buffer layer를 활성화시키기 위한 p-layer의 최적화 조건을 구현해 볼 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.207-212
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• 2007

The concentration profiles of deep energy levels($E_c$ -0.23e V, $E_v$+0.36e V and $E_c$ -0.23e V) in platinum-diffused silicon have generally a sharp gradient in the vicinity of the surface of the silicon wafer. In this work two efficient methods are proposed to obtain the uniform concentration profiles throughout the silicon wafer. One is that the platinum diffusion is carried out at $1000^{\circ}C$ for 1h in oxygen atmosphere. In this case the values of obtained uniform concentration, $1{\times}10^{15}cm^{-3}$ for the $E_c$ -0.23e V level, and 1{\times}10^{14}cm^{-3}$ for the $E_c$ -0.52e V level, are very restricted, respectively. The other is two-step annealing process. The platinum diffusion is carried out at $850{\sim}1100^{\circ}C$ in a nitrogen ambient for 1h and then the annealing is performed at $1000^{\circ}C$ in oxygen ambient after removing platinum-source from the platinum diffused samples. The advantage of this method is that the uniform concentration of these levels required power devices can be controlled by setting the desired temperatures when the platinum diffusion is carried out in nitrogen ambient.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.11
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• pp.2541-2547
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• 2010

In this paper, we propose a design technique which replaces logic transistors of 1.2V with medium-voltage transistors of 3.3V having small off-leakage current in repetitive block circuits where speed is not an issue, to implement a low-power eFuse OTP memory IP in the stand-by state. In addition, we use dual-port eFuse cells reducing operational current dissipation by reducing capacitances parasitic to RWL (Read word-line) and BL (Bit-line) in the read mode. Furthermore, we propose an equivalent circuit for simulating program power injected to an eFuse from a program voltage. The layout size of the designed 512-bit eFuse OTP memory IP with a 90nm CMOS image sensor process is $342{\mu}m{\times}236{\mu}m$. It is confirmed by measurement experiments on 42 samples with a program voltage of 5V that we get a good result having 97.6 percent of program yield. Also, the minimal operational supply voltage is measured well to be 0.9V.